CENTRAL 2N2412

DATA SHEET
2N2411
2N2412
PNP SILICON TRANSISTOR
JEDEC TO-18 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed
for high speed switching applications.
MAXIMUM RATINGS:
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage
Junction Temperature
UNITS
VCBO
VCEO
VEBO
IC
PD
PD
25
15
5.0
100
0.5
1.2
TJ,Tstg
-65 to +200
ΘJA
ΘJC
Thermal Resistance
Thermal Resistance
V
V
V
mA
W
W
°C
350
°C/W
146
°C/W
ELECTRICAL CHARACTERISTICS:
2N2411
MIN MAX
SYMBOL
TEST CONDITIONS
ICES
ICES
IEBO
VCE=15V
VCE=15V, TA=150°C
VEB=5.0V
BVCBO
BVCEO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hfe
Cob
Cib
IC=10µA
IC=10mA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=0.5V, IC=50µA
VCE=0.5V, IC=10mA
VCE=0.5V, IC=10mA, TA=-55°C
VCE=1.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
UNITS
10
10
nA
10
10
10
µA
µA
0.2
0.9
V
V
V
V
25
15
0.7
10
20
2N2412
MIN MAX
25
15
0.2
0.9
60
10
10
1.4
0.7
20
40
120
20
20
1.4
5.0
8.0
5.0
8.0
pF
pF
(CONTINUED ON REVERSE SIDE)
R0
2N2411 / 2N2412
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL
2N2411
MIN
MAX
TEST CONDITIONS
td
tr
ton
VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω
VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω
VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω
ts
tf
toff
2N2412
MIN MAX
UNITS
10
10
ns
20
20
ns
25
25
ns
IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω
IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω
90
90
ns
20
20
ns
IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω
100
100
ns
JEDEC TO-18 CASE - MECHANICAL OUTLINE
A
B
D
SYMBOL
A (DIA)
B (DIA)
C
D
E
F (DIA)
G (DIA)
H
I
J
C
E
F
LEAD #2
LEAD #1
I
45°
G
H
LEAD #3
J
R1
Lead Code:
1) Emitter
2) Base
3) Collector
DIMENSIONS
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.209 0.230
5.31
5.84
0.178 0.195
4.52
4.95
0.030
0.76
0.170 0.210
4.32
5.33
0.500
12.70
0.016 0.019
0.41
0.48
0.100
2.54
0.050
1.27
0.036 0.046
0.91
1.17
0.028 0.048
0.71
1.22
TO-18 (REV: R1)