Central 2N3766 2N3767 NPN SILICON POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING CODE: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL 2N3766 2N3767 Collector-Base Voltage VCBO 80 100 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 4.0 A Base Current IB 2.0 A Power Dissipation PD 25 W TJ, Tstg -65 to +200 °C ΘJC 7.0 °C/W Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN UNITS MAX UNITS ICEV ICBO VCE=Rated VCBO, VBE=1.5V VCB=Rated VCBO 10 μA 10 μA ICEO IEBO VCE=Rated VCEO VEB=6.0V 500 μA 500 μA BVCEO IC=100mA (2N3766) IC=100mA (2N3767) BVCEO VCE(SAT) VCE(SAT) VBE(ON) hFE 60 IC=500mA, IB=50mA IC=1.0A, IB=100mA VCE=10V, IC=1.0A VCE=5.0V, IC=50mA V 1.0 V 2.5 V 1.5 V 30 40 hFE VCE=5.0V, IC=500mA VCE=10V, IC=1.0A fT Cob VCE=10V, IC=500mA, f=10MHz VCB=10V, IC=0, f=100KHz 10 hFE V 80 160 20 MHz 50 pF R1 (25-October 2007)) Central TM Semiconductor Corp. 2N3766 2N3767 NPN SILICON POWER TRANSISTOR TO-66 CASE - MECHANICAL OUTLINE MARKING CODE: FULL PART NUMBER R1 (25-October 2007))