CENTRAL CMLM0205

Central
CMLM0205
M U LT I D I S C R E T E
Semiconductor Corp.
MODULE ™
SURFACE MOUNT
N-CHANNEL MOSFET AND
LOW VF SILICON SCHOTTKY DIODE
TM
TM
DESCRIPTION:
The Central Semiconductor CMLM0205 is a
Multi Discrete Module ™ consisting of a single
N-Channel MOSFET and a Low VF Schottky diode
packaged in a space saving PICOmini™ SOT-563
case. This device is designed for small signal
general purpose applications where size and
operational efficiency are prime requirements.
• Combination: N-Channel MOSFET and
Low VF Schottky Diode.
SOT-563 CASE
MARKING CODE:
C25
MAXIMUM RATINGS (SOT-563 Package): (TA=25°C)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
PD
350
UNITS
mW
TJ, Tstg
ΘJA
-65 to +150
357
°C
°C/W
MAXIMUM RATINGS Q1: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
60
60
40
280
280
1.5
1.5
UNITS
V
V
V
mA
mA
A
A
MAXIMUM RATINGS D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp ≤ 1ms
Forward Surge Current, tp = 8ms
SYMBOL
VRRM
IF
IFRM
IFSM
40
500
3.5
10
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IGSSF
VGS=20V, VDS=0V
IGSSR
VGS=20V, VDS=0V
IDSS
VDS=60V, VGS=0V
IDSS
VDS=60V, VGS=0V, Tj=125°C
ID(ON)
VGS=10V, VDS ≥ 2VDS(ON)
500
BVDSS
VGS=0V, ID=10µA
60
VGS(th)
VDS=VGS, ID=250µA
1.0
VDS(ON)
VGS=10V, ID=500mA
VDS(ON)
VGS=5.0V, ID=50mA
rDS(ON)
VGS=10V, ID=500mA
rDS(ON)
VGS=10V, ID=500mA, Tj=125°C
rDS(ON)
VGS=5.0V, ID=50mA
rDS(ON)
VGS=5.0V, ID=50mA, Tj=125°C
gFS
VDS ≥ 2VDS(ON), ID=200mA
80
MAX
100
100
1.0
500
2.5
1.0
0.15
2.0
3.5
3.0
5.0
UNITS
nA
nA
µA
µA
mA
V
V
V
V
Ω
Ω
Ω
Ω
mmhos
R0 (12-October 2004)
Central
CMLM0205
TM
M U LT I D I S C R E T E M O D U L E ™
SURFACE MOUNT
N-CHANNEL MOSFET AND
LOW VF SILICON SCHOTTKY DIODE
Semiconductor Corp.
ELECTRICAL CHARACTERISTICS Q1 (continued)
SYMBOL
Crss
Ciss
Coss
ton
toff
VSD
TEST CONDITIONS
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDD=30V, VGS=10V, ID=200mA,
RG=25Ω, RL=150Ω
VGS=0V, IS=400mA
MIN
ELECTRICAL CHARACTERISTICS D1 (TA=25°C)
IR
VR= 10V
IR
VR= 30V
BVR
IR= 500µA
VF
IF= 100µA
VF
IF= 1.0mA
VF
IF= 10mA
VF
IF= 100mA
VF
IF= 500mA
CT
VR= 1.0V, f=1.0 MHz
MAX
5.0
50
25
20
20
1.2
UNITS
pF
pF
pF
ns
ns
V
20
100
µA
µA
V
V
V
V
V
V
pF
40
0.13
0.21
0.27
0.35
0.47
50
SOT-563 - MECHANICAL OUTLINE
D
E
A
6
E
5
4
B
G
1
C
F
3
2
H
R0
MARKING CODE: C25
LEAD CODE:
1) GATE Q1
2) SOURCE Q1
3) CATHODE D1
4) ANODE D1
5) ANODE D1
6) DRAIN Q1
R0 (12-October 2004)