Central CMLM0205 M U LT I D I S C R E T E Semiconductor Corp. MODULE ™ SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM TM DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module ™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode packaged in a space saving PICOmini™ SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Combination: N-Channel MOSFET and Low VF Schottky Diode. SOT-563 CASE MARKING CODE: C25 MAXIMUM RATINGS (SOT-563 Package): (TA=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL PD 350 UNITS mW TJ, Tstg ΘJA -65 to +150 357 °C °C/W MAXIMUM RATINGS Q1: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current SYMBOL VDS VDG VGS ID IS IDM ISM 60 60 40 280 280 1.5 1.5 UNITS V V V mA mA A A MAXIMUM RATINGS D1: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp ≤ 1ms Forward Surge Current, tp = 8ms SYMBOL VRRM IF IFRM IFSM 40 500 3.5 10 UNITS V mA A A ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IGSSF VGS=20V, VDS=0V IGSSR VGS=20V, VDS=0V IDSS VDS=60V, VGS=0V IDSS VDS=60V, VGS=0V, Tj=125°C ID(ON) VGS=10V, VDS ≥ 2VDS(ON) 500 BVDSS VGS=0V, ID=10µA 60 VGS(th) VDS=VGS, ID=250µA 1.0 VDS(ON) VGS=10V, ID=500mA VDS(ON) VGS=5.0V, ID=50mA rDS(ON) VGS=10V, ID=500mA rDS(ON) VGS=10V, ID=500mA, Tj=125°C rDS(ON) VGS=5.0V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA, Tj=125°C gFS VDS ≥ 2VDS(ON), ID=200mA 80 MAX 100 100 1.0 500 2.5 1.0 0.15 2.0 3.5 3.0 5.0 UNITS nA nA µA µA mA V V V V Ω Ω Ω Ω mmhos R0 (12-October 2004) Central CMLM0205 TM M U LT I D I S C R E T E M O D U L E ™ SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 (continued) SYMBOL Crss Ciss Coss ton toff VSD TEST CONDITIONS VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDD=30V, VGS=10V, ID=200mA, RG=25Ω, RL=150Ω VGS=0V, IS=400mA MIN ELECTRICAL CHARACTERISTICS D1 (TA=25°C) IR VR= 10V IR VR= 30V BVR IR= 500µA VF IF= 100µA VF IF= 1.0mA VF IF= 10mA VF IF= 100mA VF IF= 500mA CT VR= 1.0V, f=1.0 MHz MAX 5.0 50 25 20 20 1.2 UNITS pF pF pF ns ns V 20 100 µA µA V V V V V V pF 40 0.13 0.21 0.27 0.35 0.47 50 SOT-563 - MECHANICAL OUTLINE D E A 6 E 5 4 B G 1 C F 3 2 H R0 MARKING CODE: C25 LEAD CODE: 1) GATE Q1 2) SOURCE Q1 3) CATHODE D1 4) ANODE D1 5) ANODE D1 6) DRAIN Q1 R0 (12-October 2004)