CMLM0708A MULTI DISCRETE MODULE ™ SURFACE MOUNT N-CHANNEL AND P-CHANNEL COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0708A is a Multi Discrete Module™ consisting of complementary N-Channel and P-Channel Enhancement-mode MOSFETS packaged in a space saving PICOmini™ SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. MARKING CODE: C78 SOT-563 CASE FEATURES: • Dual Complementary MOSFETS • Low rDS(ON) (3Ω MAX @ VGS=5.0V) • Small SOT-563 Surface Mount Package APPLICATIONS: • Switching Circuits • DC/DC Converters • Battery Powered Portable Equipment including Cell Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc. MAXIMUM RATINGS - CASE: (TA=25°C) Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current SYMBOL VDS VDG VGS ID IS IDM ISM SYMBOL PD PD PD TJ, Tstg ΘJA 350 300 150 -65 to +150 357 UNITS mW mW mW °C °C/W N-Ch (Q1) 60 60 40 280 280 1.5 1.5 P-Ch (Q2) 50 50 20 280 280 1.5 1.5 UNITS V V V mA mA A A ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) N-Ch (Q1) SYMBOL TEST CONDITIONS MIN MAX IGSSF, IGSSR VGS=20V, VDS=0 100 IDSS (N-Ch) VDS=60V, VGS=0 1.0 IDSS (P-Ch) VDS=50V, VGS=0 IDSS (N-Ch) VDS=60V, VGS=0, TJ=125°C 500 IDSS (P-Ch) VDS=50V, VGS=0, TJ=125°C ID(ON) (N-Ch) VGS=10V, VDS=10V 500 ID(ON) (P-Ch) VGS=10V, VDS=10V BVDSS VGS=0, ID=10μA 60 - P-Ch MIN 500 50 (Q2) MAX 100 1.0 500 - UNITS nA μA μA μA μA mA mA V Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R1 (18-January 2010) CMLM0708A MULTI DISCRETE MODULE ™ SURFACE MOUNT N-CHANNEL AND P-CHANNEL COMPLEMENTARY MOSFETS ELECTRICAL CHARACTERISTICS - Continued: SYMBOL TEST CONDITIONS VGS(th) VDS=VGS, ID=250μA VDS(ON) VGS=10V, ID=500mA N-Ch (Q1) MIN MAX 1.0 2.5 P-Ch (Q2) MIN MAX 1.0 2.5 UNITS V - 1.0 - 1.5 V VGS=5.0V, ID=50mA VGS=0, IS=400mA - 0.15 - 0.15 V - 1.2 - - V VGS=0, IS=115mA VGS=10V, ID=500mA - - - 1.3 V - 2.0 - 2.5 Ω - 3.5 - 4.0 Ω rDS(ON) VGS=10V, ID=500mA, TJ=125°C VGS=5.0V, ID=50mA - 3.0 - 3.0 Ω rDS(ON) VGS=5.0V, ID=50mA, TJ=125°C - 5.0 - 5.0 Ω gFS (N-Ch) VDS=10V, ID=200mA VDS=10V, ID=200mA 80 - - - mS - - 200 - mS VDS(ON) VSD (N-Ch) VSD (P-Ch) rDS(ON) rDS(ON) gFS (P-Ch) Crss Ciss Coss ton / toff VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz - 5.0 - 7.0 pF - 50 - 70 pF - 25 - 15 pF VDD=30V, VGS=10V, ID=200mA RG=25Ω, RL=150Ω - 20 - 20 ns SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate Q1 2) Source Q1 3) Drain Q2 4) Gate Q2 5) Source Q2 6) Drain Q1 MARKING CODE: C78 R1 (18-January 2010) w w w. c e n t r a l s e m i . c o m