CENTRAL CMLM2205_10

CMLM2205
MULTI DISCRETE MODULE ™
SURFACE MOUNT
SILICON SWITCHING NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM2205 is a
Multi Discrete Module™ consisting of a single NPN
Transistor and Schottky Diode packaged in a space
saving PICOmini™ SOT-563 case. This device is
designed for small signal general purpose applications
where size and operational efficiency are prime
requirements.
• Combination: Small Signal Switching NPN Transistor
and Low VF Schottky Diode.
SOT-563 CASE
• Complementary Device: CMLM0705
MARKING CODE: C22
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
MAXIMUM RATINGS - Q1: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
SYMBOL
PD
TJ, Tstg
ΘJA
SYMBOL
VCBO
VCEO
VEBO
IC
MAXIMUM RATINGS - D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp ≤1.0ms
Peak Forward Surge Current, tp = 8.0ms
SYMBOL
VRRM
IF
IFRM
IFSM
350
-65 to +150
357
UNITS
mW
°C
°C/W
100
45
6.0
600
UNITS
V
V
V
mA
40
500
3.5
10
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=60V
ICBO
VCB=60V, TA=125 °C
ICEV
VCE=60V, VEB=3.0V
IEBO
VEB=3.0V
BVCBO
IC=10μA
100
145
BVCEO
IC=10mA
45
53
BVEBO
IE=10μA
6.0
0.09
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
0.12
VBE(SAT)
IC=150mA, IB=15mA
0.6
VBE(SAT)
IC=500mA, IB=50mA
hFE
VCE=10V, IC=0.1mA
100
210
hFE
VCE=10V, IC=1.0mA
100
205
hFE
VCE=10V, IC=10mA
100
205
hFE
VCE=1.0V, IC=150mA
75
150
hFE
VCE=10V, IC=150mA
100
hFE
VCE=10V, IC=500mA
60
130
MAX
10
10
10
10
0.15
0.50
1.2
2.0
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
300
R2 (18-January 2010)
CMLM2205
MULTI DISCRETE MODULE ™
SURFACE MOUNT
SILICON SWITCHING NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
ELECTRICAL CHARACTERISTICS - Q1 - Continued: (TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
fT
VCE=20V, IC=20mA, f=100MHz
300
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VEB=0.5V, IC=0, f=1.0MHz
NF
VCE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz
td
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
tr
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
ts
VCC=30V, IC=150mA, IB1=IB215mA
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
ELECTRICAL CHARACTERISTICS - D1: (TA=25°C)
IR
VR=10V
IR
VR=30V
BVR
IR=500μA
VF
IF=100μA
VF
IF=1.0mA
VF
IF=10mA
VF
IF=100mA
VF
IF=500mA
CT
VR=1.0V, f=1.0MHz
MAX
UNITS
MHz
pF
pF
dB
ns
ns
ns
ns
8.0
25
4.0
10
25
225
60
20
100
μA
μA
V
V
V
V
V
V
pF
40
0.13
0.21
0.27
0.35
0.47
50
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Collector Q1
MARKING CODE: C22
R2 (18-January 2010)
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