Central CMLM0705 M U LT I D I S C R E T E M O D U L E ™ SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0705 is a Multi Discrete Module ™ consisting of a single PNP Transistor and a Schottky Diode packaged in a space saving PICOmini™ SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Combination: Small Signal Switching PNP Transistor and Low VF Schottky Diode. • Complementary Device: CMLM2205 MARKING CODE: MAXIMUM RATINGS (SOT-563 Package): (TA=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance C75 SYMBOL PD 350 UNITS mW TJ, Tstg ΘJA -65 to +150 357 °C °C/W MAXIMUM RATINGS Q1: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC 90 60 6.0 600 UNITS V V V mA MAXIMUM RATINGS D1: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp ≤ 1ms Forward Surge Current, tp = 8ms SYMBOL VRRM IF IFRM IFSM 40 500 3.5 10 UNITS V mA A A ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125°C VCE=30V, VBE=0.5V IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA MIN TYP 90 60 5.0 115 0.113 0.280 100 100 100 100 75 MAX 10 10 50 0.2 0.7 1.3 2.6 UNITS nA µA nA V V V V V V V 205 300 110 R0 (06-October 2004) Central CMLM0705 TM M U LT I D I S C R E T E M O D U L E ™ SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 (continued) SYMBOL TEST CONDITIONS fT VCE=20V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz Cib VBE=2.0V, IC=0, f=1.0MHz ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA toff VCC=6.0V, IC=150mA, IB1=IB2=15mA ts VCC=6.0V, IC=150mA, IB1=IB2=15mA tf VCC=6.0V, IC=150mA, IB1=IB2=15mA MIN 200 MAX 8.0 30 45 10 40 100 80 30 ELECTRICAL CHARACTERISTICS D1 (TA=25°C) IR VR= 10V IR VR= 30V BVR IR= 500µA VF IF= 100µA VF IF= 1.0mA VF IF= 10mA VF IF= 100mA VF IF= 500mA CT VR= 1.0V, f=1.0 MHz 20 100 40 0.13 0.21 0.27 0.35 0.47 50 UNITS MHz pF pF ns ns ns ns ns ns µA µA V V V V V V pF SOT-563 - MECHANICAL OUTLINE D E A 6 E 5 4 B G 1 C F 3 2 H R0 MARKING CODE: C75 LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) CATHODE D1 4) ANODE D1 5) ANODE D1 6) COLLECTOR Q1 R0 (06-October 2004)