CMUT2907A ULTRAmini™ SURFACE MOUNT PNP SILICON TRANSISTOR SOT-523 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface mount package, designed for small signal general purpose and switching applications. Marking Code is FC2. 60 60 5.0 600 250 -65 to +150 500 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=50V 10 nA ICBO VCB=50V, TA=125°C 10 µA ICEV VCE=30V, VBE=0.5V 50 nA BVCBO IC=10µA 60 V BVCEO IC=10mA 60 V BVEBO IE=10µA 5.0 V VCE(SAT) IC=150mA, IB=15mA 0.4 V VCE(SAT) IC=500mA, IB=50mA 1.6 V VBE(SAT) IC=150mA, IB=15mA 1.3 V VBE(SAT) IC=500mA, IB=50mA 2.6 V hFE VCE=10V, IC=0.1mA 75 hFE VCE=10V, IC=1.0mA 100 hFE VCE=10V, IC=10mA 100 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=500mA 50 R0 ( 30-May 2001) Central TM CMUT2907A ULTRAmini™ SURFACE MOUNT PNP SILICON TRANSISTOR Semiconductor Corp. ELECTRICAL CHARACTERISTICS: Continued SYMBOL fT Cob Cib ton td tr toff ts tf TEST CONDITIONS MIN VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA MAX UNITS 8.0 30 45 10 40 100 80 30 MHz pF pF ns ns ns ns ns ns 200 MECHANICAL OUTLINE - SOT-523 BOTTOM VIEW E F A G B C 1 2 D H 3 I LEAD CODE: 1) Base 2) Emitter 3) Collector R0 ( 30-May 2001) R1