CMKT2907A ULTRAmini™ SURFACE MOUNT DUAL PNP SILICON TRANSISTOR SOT-363 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT2907A type is a Dual PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface mount package, designed for small signal general purpose and switching applications. Marking Code is K07. UNITS V V V mA mW 60 60 5.0 600 350 -65 to +150 357 °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125°C VCE=30V, VBE=0.5V IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6 75 100 100 100 50 UNITS nA µA nA V V V V V V V 300 R0 ( 9 -October 2001) Central TM CMKT2907A ULTRAmini™ SURFACE MOUNT DUAL PNP SILICON TRANSISTOR Semiconductor Corp. ELECTRICAL CHARACTERISTICS: Continued SYMBOL fT Cob Cib ton td tr toff ts tf TEST CONDITIONS MIN VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA MAX UNITS 8.0 30 45 10 40 100 80 30 MHz pF pF ns ns ns ns ns ns 200 MECHANICAL OUTLINE - SOT-363 TR2 TR1 LEAD CODE: 1) TR1 2) TR1 3) TR2 4) TR2 5) TR2 6) TR1 Emitter Base Collector Emitter Base Collector R0 ( 9 -October 2001)