Central CMPTA14E Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: The Central Semiconductor CMPTA14E is an Enhanced version of the CMPTA14 NPN Darlington Transistor. This device is manufactured by the epitaxial planar process, epoxy molded in a surface mount SOT-23 package, designed for applications requiring extremely high gain. MARKING CODE: C1NE SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR SOT-23 CASE FEATURED ENHANCED SPECIFICATIONS: ♦ BVCBO from 30V min to 40V min. ♦ ♦ ♦ ♦ MAXIMUM RATINGS (TA=25 °C) Collector-Base Voltage TM VCE(SAT) from 1.5V max to 1.0V max. hFE from 10K min to 30K min. SYMBOL UNITS VCBO 40 V VCES VEBO 40 V 10 V Collector Current IC 500 Power Dissipation PD 350 mA mW TJ,Tstg -65 to +150 °C ΘJA 357 °C/W Collector-Emitter Voltage Emitter-Base Voltage Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS (TA=25 °C unless otherwise noted) SYMBOL ♦ ICBO ♦ ♦ IEBO BVCES VCE(SAT) VBE(ON) ♦ ♦ ♦♦ hFE hFE hFE fT ♦ ♦♦ TEST CONDITIONS MIN TYP VCB=40V VEB=10V IC=100µA IC=100mA, IB=0.1mA VCE=5.0V, IC=100mA 40 VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=500mA 30,000 70,000 40,000 75,000 10,000 35,000 VCE=5.0V, IC=10mA, f=100MHz UNITS 100 nA 100 nA 60 V 0.75 125 MAX 1.0 V 2.0 V MHz Enhanced specification. Additional Enhanced specification. R4 (20-February 2003) Central TM Semiconductor Corp. CMPTA14E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: C1NE R4 (20-February 2003)