Central CMPTA14E NPN Semiconductor Corp. ENHANCED SPECIFICATION Description: The Central Semiconductor CMPTA14E is an Enhanced version of the CMPTA14 NPN Darlington Transistor. This device is manufactured by the epitaxial planar process, epoxy molded in a surface mount SOT-23 package, designed for applications requiring extremely high gain. Marking Code is C1NE . NPN SILICON DARLINGTON TRANSISTOR Enhanced Specifications: ♦ BVCBO from 30V min to 40V min. SOT-23 CASE ♦ ♦ MAXIMUM RATINGS (TA=25 °C) Collector-Base Voltage TM ♦ ♦ VCE(SAT) from 1.5V max to 1.0V max. hFE from 10K min to 30K min. SYMBOL UNITS VCBO 40 V VCES VEBO 40 V 10 V Collector Current IC 500 Power Dissipation PD 350 mA mW TJ,Tstg -65 to +150 °C ΘJA 357 °C/W Collector-Emitter Voltage Emitter-Base Voltage Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS (TA=25 °C unless otherwise noted) ♦ ♦ ♦ ♦ ♦ ♦♦ SYMBOL TEST CONDITIONS ICBO IEBO VCB=40V BVCES VBE(ON) hFE hFE VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA hFE fT VCE=5.0V, IC=500mA VCE=5.0V, IC=10mA, f=100MHz ♦ ♦♦ TYP VEB=10V IC=100µA IC=100mA, IB=0.1mA VCE=5.0V, IC=100mA VCE(SAT) MIN 40 UNITS 100 nA 100 nA 60 0.75 30,000 70,000 40,000 75,000 10,000 35,000 125 MAX V 1.0 V 2.0 V MHz Enhanced specification. Additional Enhanced specification. R0 (13-May 2002) Central TM Semiconductor Corp. CMPTA14E NPN ENHANCED SPECIFICATION NPN SILICON DARLINGTON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C1NE R0 (13-May 2002)