CMST3410 NPN CMST7410 PNP SURFACE MOUNT SUPERminiTM COMPLEMENTARY SILICON LOW VCE(SAT) TRANSISTORS SOT-323 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage VCBO Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for battery driven, handheld devices requiring high current and low VCE(SAT) voltages. MARKING CODES: CMST3410: C03 CMST7410: C07 40 UNITS V V Collector-Emitter Voltage VCEO 25 Emitter-Base Voltage VEBO 6.0 V Collector Current IC 1.0 A Collector Current (Peak) ICM 1.5 A Power Dissipation PD 275 mW Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA -65 to +150 °C 455 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMST3410 CMST7410 SYMBOL TEST CONDITIONS MIN TYP TYP ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100µA 40 BVCEO IC=10mA 25 BVEBO IE=100µA 6.0 VCE(SAT) IC=50mA, IB=5.0mA 20 25 VCE(SAT) IC=100mA, IB=10mA 35 40 VCE(SAT) IC=200mA, IB=20mA 75 80 VCE(SAT) IC=500mA, IB=50mA 130 150 VCE(SAT) IC=800mA, IB=80mA 200 220 VCE(SAT) IC=1.0A, IB=100mA 250 275 VBE(SAT) IC=800mA, IB=80mA VBE(ON) VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=10mA 100 hFE VCE=1.0V, IC=100mA 100 hFE VCE=1.0V, IC=500mA 100 hFE VCE=1.0V, IC=1.0A 50 fT VCE=10V, IC=50mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz (CMST3410) Cob VCB=10V, IE=0, f=1.0MHz (CMST7410) MAX 100 100 50 75 150 250 400 450 1.1 0.9 UNITS nA nA V V V mV mV mV mV mV mV V V 300 10 15 MHz pF pF R0 (5-April 2005) Central TM Semiconductor Corp. CMST3410 NPN CMST7410 PNP SURFACE MOUNT SUPERminiTM COMPLEMENTARY SILICON LOW VCE(SAT) TRANSISTORS SOT-323 CASE - MECHANICAL OUTLINE CMST3410 NPN LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR CMST7410 PNP LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODES: CMST3410: C03 CMST7410: C07 R0 (5-April 2005)