Central CQ92-2M CQ92-2N* TM Semiconductor Corp. TRIAC 2.0 AMP, 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ92-2M and CQ92-2N are epoxy molded silicon Triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQ92-2M CQ92-2N* UNITS 800 V Peak Repetitive Off-State Voltage VDRM RMS On-State Current (TC=50°C) IT(RMS) 2.0 A Peak One Cycle Surge (t=10ms) ITSM 20 A I2t Value for Fusing (t=10ms) I 2t 2.0 A2 s Peak Gate Power (tp=10µs) 3.0 W 0.2 W Peak Gate Current (tp=10µs) PGM PG (AV) IGM 1.2 A Peak Gate Voltage (tp=10µs) VGM 8.0 V Storage Temperature Tstg TJ -40 to +150 °C Junction Temperature -40 to +125 °C Thermal Resistance ΘJA 180 °C/W Thermal Resistance ΘJC 90 °C/W Average Gate Power Dissipation ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IDRM IDRM IGT IGT 600 MIN Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C VD=12V, QUAD I, II, III TYP 1.4 MAX UNITS 5.0 µA 200 µA 5.0 mA VD=12V, QUAD IV 3.8 8.0 mA IH VGT IT=100mA, RGK=1KΩ VD=12V, QUAD I, II, III, IV 1.2 5.0 mA 1.1 1.8 V VTM ITM=2.0A, tp=380µs ITM=3.0A, tp=380µs 1.50 1.75 V 1.7 2.0 VTM dv/dt VD=2 /3 VDRM, TC=125°C 2.5 V V/µs * Available on request. Please consult factory. R0 (22-April 2004) Central TM CQ92-2M CQ92-2N* Semiconductor Corp. TRIAC 2.0 AMP, 600 THRU 800 VOLTS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) GATE 3) MT2 MARKING CODE: FULL PART NUMBER SYMBOL A (DIA) B C D E F G H I DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.175 0.205 4.45 5.21 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.022 0.41 0.56 0.100 2.54 0.050 1.27 0.125 0.165 3.18 4.19 0.080 0.105 2.03 2.67 0.015 0.38 TO-92 (REV: R1) R0 (22-April 2004)