CQ223-4M CQ223-4N SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=80°C) Peak Non-Repetitive Surge Current, t=8.3ms SYMBOL VDRM CQ223-4M CQ223-4N 600 800 UNITS V IT(RMS) 4.0 A ITSM ITSM 40 A 35 A I2t Value for Fusing, t=10ms I2t 6.0 A2s Peak Gate Power, tp=10μs PGM PG (AV) IGM 3.0 W 0.2 W Peak Non-Repetitive Surge Current, t=10ms Average Gate Power Dissipation Peak Gate Current, tp=10μs Operating Junction Temperature Storage Temperature TJ Tstg Thermal Resistance ΘJA ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C VD=12V, QUAD I, II, III 1.2 A -40 to +125 °C -40 to +150 62.5 TYP 2.5 °C °C/W MAX UNITS 10 μA 200 μA 5.0 mA VD=12V, QUAD IV 5.4 9.0 mA IH VGT RGK=1KΩ 1.6 5.0 mA VD=12V, QUAD I, II, III, IV 0.95 1.75 V VTM ITM=6.0A, tp=380μs VD=2 /3 VDRM, TC=125°C 1.25 1.75 dv/dt 11 V V/μs R2 (12-February 2010) CQ223-4M CQ223-4N SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) Gate 4) MT2 MARKING: FULL PART NUMBER R2 (12-February 2010) w w w. c e n t r a l s e m i . c o m