CQD-4M CQD-4N SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQD-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER DPAK THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage SYMBOL CQD-4M CQD-4N UNITS VDRM 600 800 V RMS On-State Current (TC=80°C) Peak One Cycle Surge, t=10ms IT(RMS) ITSM 4.0 A 40 A I2t Value for Fusing, t=10ms I2t 2.4 A2s Peak Gate Power, tp=10μs PGM PG (AV) 3.0 W 0.2 W 1.2 A Operating Junction Temperature IGM TJ -40 to +125 °C Storage Temperature Tstg -40 to +150 °C Average Gate Power Dissipation Peak Gate Current, tp=10μs ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C VD=12V, QUAD I, II, III TYP 2.5 MAX UNITS 10 μA 200 μA 5.0 mA VD=12V, QUAD IV 5.4 9.0 mA IH VGT RGK=1KΩ 1.6 5.0 mA VD=12V, QUAD I, II, III, IV 0.95 1.75 V VTM ITM=6.0A, tp=380μs VD=2 /3 VDRM, TC=125°C 1.25 1.75 dv/dt 11 V V/μs R1 (12-February 2010) CQD-4M CQD-4N SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) Gate 4) MT2 MARKING: FULL PART NUMBER R1 (12-February 2010) w w w. c e n t r a l s e m i . c o m