CENTRAL CQD

CQD-4M
CQD-4N
SURFACE MOUNT
4 AMP SILICON TRIAC
600 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQD-4M series
type is an Epoxy Molded Silicon Triac designed for full
wave AC control applications featuring gate triggering
in all four (4) quadrants.
MARKING: FULL PART NUMBER
DPAK THYRISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
SYMBOL
CQD-4M
CQD-4N
UNITS
VDRM
600
800
V
RMS On-State Current (TC=80°C)
Peak One Cycle Surge, t=10ms
IT(RMS)
ITSM
4.0
A
40
A
I2t Value for Fusing, t=10ms
I2t
2.4
A2s
Peak Gate Power, tp=10μs
PGM
PG (AV)
3.0
W
0.2
W
1.2
A
Operating Junction Temperature
IGM
TJ
-40 to +125
°C
Storage Temperature
Tstg
-40 to +150
°C
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
IDRM
IGT
IGT
Rated VDRM, RGK=1KΩ
Rated VDRM, RGK=1KΩ, TC=125°C
VD=12V, QUAD I, II, III
TYP
2.5
MAX
UNITS
10
μA
200
μA
5.0
mA
VD=12V, QUAD IV
5.4
9.0
mA
IH
VGT
RGK=1KΩ
1.6
5.0
mA
VD=12V, QUAD I, II, III, IV
0.95
1.75
V
VTM
ITM=6.0A, tp=380μs
VD=2 /3 VDRM, TC=125°C
1.25
1.75
dv/dt
11
V
V/μs
R1 (12-February 2010)
CQD-4M
CQD-4N
SURFACE MOUNT
4 AMP SILICON TRIAC
600 THRU 800 VOLTS
DPAK THYRISTOR CASE - MECHANICAL OUTLINE
LEAD CODE:
1) MT1
2) MT2
3) Gate
4) MT2
MARKING:
FULL PART NUMBER
R1 (12-February 2010)
w w w. c e n t r a l s e m i . c o m