CENTRAL CQDD-16N

Central
CQDD-16M
CQDD-16N
TM
Semiconductor Corp.
16 AMP TRIAC
600 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQDD-16M
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
D2PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
CQDD
-16M
CQDD
-16N
UNITS
800
V
Peak Repetitive Off-State Voltage
VDRM
RMS On-State Current (TC=90°C)
IT(RMS)
16
A
Peak One Cycle Surge (t=8.3ms)
ITSM
110
A
I2t Value for Fusing (t=8.3ms)
I2t
50
A2s
Peak Gate Power (tp=10µs)
40
W
1.0
W
Peak Gate Current (tp=10µs)
PGM
PG (AV)
IGM
6.0
A
Peak Gate Voltage (tp=10µs)
VGM
16
V
Average Gate Power Dissipation
600
Critical Rate of Rise of On-State Current
Repetitive (f=60Hz)
di/dt
10
A/µs
Storage Temperature
Tstg
-40 to +150
°C
Junction Temperature
TJ
-40 to +125
°C
Thermal Resistance
ΘJA
60
°C/W
Thermal Resistance
ΘJC
2.3
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
IDRM
IGT
IGT
TYP
MAX
UNITS
Rated VDRM
10
µA
Rated VDRM, TC=125°C
VD=12V, RL=10Ω, QUAD I, II, III
2.0
mA
10.9
25
mA
VD=12V, RL=10Ω, QUAD IV
55.2
75
mA
IH
VGT
IT=100mA
VD=12V, RL=10Ω, QUAD I, II, III
9.8
25
mA
VGT
VD=12V, RL=10Ω, QUAD IV
ITM=22.5A, tp=380µs
VTM
dv/dt
VD=2 /3 VDRM, RGK=∞, TC=125°C
10
0.97
1.50
V
1.51
2.50
V
1.35
1.60
V
V/µs
R1 (24-September 2004)
Central
TM
CQDD-16M
CQDD-16N
Semiconductor Corp.
16 AMP TRIAC
600 THRU 800 VOLTS
D2PAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) MT1
2) MT2
3) GATE
4) MT2
MARKING CODE:
FULL PART NUMBER
DIMENSIONS
INCHES
MILLIMETERS
SYMBOL MIN
MAX
MIN
MAX
A
0.163 0.189 4.14
4.80
B
0.045 0.055 1.14
1.40
C
0.000 0.010 0.00
0.25
D
0.012 0.028 0.30
0.70
E
0.386 0.409 9.80 10.40
F
0.378 0.417 9.60 10.60
G
0.335 0.358 8.50
9.10
H
0.197 0.236 5.00
6.00
J
0.093 0.108 2.35
2.75
K
0.030 0.035 0.75
0.90
D2PAK (REV: R2)
R1 (24-September 2004)