DATA SHEET CS65-70B CS65-70D CS65-70M CS65-70N CS65-70P CS65-70PB SILICON CONTROLLED RECTIFIER 70 AMPS RMS, 200 THRU 1200 VOLTS TO-65 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CS65-70B series types are High Power Silicon Controlled Rectifiers designed for phase control applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage Peak Non-Repetitive Reverse Voltage RMS On-State Current (TC=102°C) Average On-State Current (TC=102°C) Peak One Cycle Surge ( 60Hz) VDRM, VRRM VRSM IT(RMS) IT(AV) ITSM I2t Value for Fusing (t=8.3ms) Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Gate Power Average Gate Power (tp=10µs) Peak Gate Current I2t VFGM VRGM PGM PG(AV) IGM di/dt Tstg TJ ΘJ-C Critical Rate of Rise of On-State Current Storage Temperature Junction Temperature Thermal Resistance CS65 CS65 CS65 CS65 -70B -70D -70M -70N 200 300 400 500 600 700 800 900 CS65 -70P 1000 1100 CS65 -70PB UNITS 1200 1300 63 40 1000 V V A A A 4100 20 10 10 1.0 3.0 A2s V V W W A 200 -65 to +150 -65 to +125 0.35 A/µs °C °C °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IDRM, IRRM IGT IH VGT VTM dv/dt MIN MAX UNITS Rated VDRM, VRRM, TC=125°C VD=12V, RL=33Ω IT=500mA 6.0 100 200 mA mA mA VD=12V, RL=33Ω ITM=500A VD=.67 x VDRM, TC=125°C 3.0 3.0 V V V/µs 200 TYP (SEE REVERSE SIDE) R2 CS65-70 SERIES SILCON CONTROLLED RECTIFIER MAXIMUM ON-STATE CHARACTERISTICS ITM, ON-STATE CURRENT (A 1000 T C = 2 5 °C T C = 12 5 °C 100 10 0 0.5 1 1.5 2 2.5 3 3.5 V TM, O N - ST A T E V O LT A G E ( V ) TO-65 PACKAGE - MECHANICAL OUTLINE A D B C F H G CATHODE J E K GATE M L ANODE 1/4-28 UNF - 3A THREAD N R1 DIMENSIONS INCHES MILLIMETERS MAX MIN MAX SYMBOL MIN A (DIA) 0.667 16.94 B 0.025 0.030 0.64 0.76 C 0.770 19.56 D 0.677 0.685 17.20 17.40 E 0.120 3.05 F 0.200 0.300 5.08 7.62 G (DIA) 0.145 0.155 3.68 3.93 H 0.065 0.085 1.65 2.15 J 1.200 1.250 30.48 31.75 K (DIA) 0.055 0.065 1.40 1.65 L 0.115 0.155 2.92 3.94 M 0.515 13.08 N 0.427 0.447 10.84 11.35 TO-65 (REV: R1)