CSD-8M CSD-8N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 8 AMP, 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-8M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER DPAK THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs SYMBOL CSD-8M CSD-8N UNITS VDRM, VRRM IT(RMS) 600 800 V 8.0 ITSM I2t PGM PG (AV) Average Gate Power Dissipation Peak Forward Gate Current, tp=10μs Peak Forward Gate Voltage, tp=10μs Peak Reverse Gate Voltage, tp=10μs Critical Rate of Rise of On-State Current Operating Junction Temperature Storage Temperature A 80 A 32 A2s 40 W 1.0 W IFGM VFGM 4.0 A 16 V VRGM di/dt 5.0 V 50 A/μs TJ Tstg -40 to +125 °C -40 to +150 °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IDRM, IDRM, Rated VDRM, Rated VDRM, IRRM IRRM MIN TYP VRRM VRRM, TC=125°C VD=12V, RL=10Ω MAX UNITS 10 μA 2.0 mA IGT IH VGT 3.0 15 mA IT=100mA VD=12V, RL=10Ω 7.3 20 mA 0.9 1.5 V VTM ITM=16A, tp=380μs 1.3 1.8 V dv/dt VD=2 /3 VDRM, TC=125°C 200 V/μs R1 (17-February 2010) CSD-8M CSD-8N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 8 AMP, 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER R1 (17-February 2010) w w w. c e n t r a l s e m i . c o m