Obsolete Device
TCM680
+5V To ±10V Voltage Converter
Features
General Description
• 99% Voltage Conversion Efficiency
• 85% Power Conversion Efficiency
• Input Voltage Range:
- +2.0V to +5.5V
• Only 4 External Capacitors Required
• 8-Pin SOIC Package
The TCM680 is a dual charge pump, voltage converter
that produces output voltages of +2VIN and -2VIN from
a single input voltage of +2.0V to +5.5V. Common
applications include ±10V from a single +5V logic
supply and ±6V from a +3V lithium battery.
The TCM680 is packaged in 8-pin SOIC and PDIP
packages and requires only four inexpensive, external
capacitors. The charge pumps are clocked by an onboard 8 kHz oscillator. Low output source impedances
(typically 140 Ω) provide maximum output currents of
10 mA for each output. Typical power conversion efficiency is 85%.
Applications
•
•
•
•
•
•
•
±10V From +5V Logic Supply
±6V From a 3V Lithium Cell
Handheld Instruments
Portable Cellular Phones
LCD Display Bias Generator
Panel Meters
Operational Amplifier Power Supplies
High efficiency, small size and low cost make the
TCM680 suitable for a wide variety of applications that
need both positive and negative power supplies
derived from a single input voltage.
Package Type
Typical Operating Circuit
PDIP
+5V
C1 +
4.7 µF
C2 +
4.7 µF
C1+
VIN
VOUT
C1-
C4
+ 4.7 µF
+
VOUT+ = (2 x VIN)
TCM680
VOUTGND
GND
1
C2+
2
C2 -
C2+
C2-
C1 -
7 C1 +
TCM680CPA
3 TCM680EPA 6 VIN
VOUT-
4
5 GND
C1 -
1
8 VOUT+
C2+
2
VOUT- = -(2 x VIN)
SOIC
C3
+ 4.7 µF
GND
C2 VOUT-
© 2005 Microchip Technology Inc.
8 VOUT+
7 C1 +
TCM680COA
3 TCM680EOA 6 VIN
4
5 GND
DS21486C-page 1
TCM680
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operation listings of this specification is
not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability
Absolute Maximum Ratings†
VIN .......................................................................+5.8V
VOUT+ ................................................................ +11.6V
VOUT– .................................................................-11.6V
VOUT+ Short-Circuit Duration...................... Continuous
VOUT+ Current ....................................................75 mA
VIN dV/dT ....................................................... 1 V/µsec
Power Dissipation (TA ≤ 70°C)
8-Pin PDIP ..............................................730 mW
8-Pin SOIC ..............................................470 mW
Operating Temperature Range.............-40°C to +85°C
Storage Temperature Range ..............-65°C to +150°C
Maximum Junction Temperature ...................... +150°C
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = +5V, TA = +25°C, refer to Figure 1-1.
Parameters
Supply Voltage Range
Supply Current
Negative Charge Pump Output
Source Resistance
Positive Charge Pump Output
Source Resistance
Sym
Min
VIN
IIN
ROUT-
Typ
Max
2.0
—
5.5
V
—
0.5
1.0
mA
—
1.0
2.0
VIN = 5V, RL = ∞
—
—
2.5
VIN = 5V, 0°C ≤ TA ≤ +70°C, RL = ∞
—
—
3.0
VIN = 5V, -40°C ≤ TA ≤ +85°C, RL = ∞
—
140
180
—
180
250
IL– = 5 mA, IL+ = 0 mA, VIN = 2.8V
—
—
—
—
—
—
220
250
—
0°C ≤ TA ≤ + 70°C
-40°C ≤ TA ≤ + 85°C
IL– = 10 mA, IL+ = 0 mA, VIN = 5V
140
180
—
180
250
IL+= 5 mA, IL– = 0 mA, VIN = 2.8V
—
—
—
—
—
—
220
250
—
0°C ≤ TA ≤ + 70°C
-40°C ≤ TA ≤ + 85°C
IL+ = 10 mA, IL– = 0 mA, VIN = 5V
ROUT+
Units
Ω
Ω
Conditions
-40°C ≤ TA ≤ +85°C, RL = 2 kΩ
VIN = 3V, RL = ∞
IL– = 10 mA, IL+ = 0 mA, VIN = 5V
IL+= 10 mA, IL– = 0 mA, VIN = 5V
Oscillator Frequency
FOSC
—
21
—
kHz
Power Efficiency
PEFF
—
85
—
%
RL = 2 kΩ
VOUTEFF
97
99
—
%
VOUT+, RL = ∞
97
99
—
Voltage Conversion Efficiency
DS21486C-page 2
VOUT–, RL = ∞
© 2005 Microchip Technology Inc.
TCM680
VIN
C1
C2
+
+
4.7 µF
1 C 1
VOUT+ 8
2 C +
2
C1+ 7
4.7 µF
TCM680
3 C 2
4
VOUT-
VIN
GND
VOUT+
+
C4
10 µF
RL+
6
5
GND
+
C3
10 µF
RLVOUT-
FIGURE 1-1:
Test Circuit Used For DC Characteristics Table.
© 2005 Microchip Technology Inc.
DS21486C-page 3
TCM680
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VIN = +5V, TA = +25°C.
300
10.0
250
VOUT (V)
Output Resistance (Ω)
C1 = C4 = 10 μF
200
9.0
8.0
150
ROUT
100
2
1
4
3
5
7.0
6
5
10
Load Current (mA)
0
VIN (V)
FIGURE 2-1:
Output Resistance vs. VIN.
FIGURE 2-4:
Current.
1.4
15
VOUT+ or VOUT- vs. Load
10.0
1.0
9.0
0.8
VOUT (V)
Supply Current (mA)
1.2
RL = ∞
0.6
8.0
0.4
0.2
1
2
4
3
5
6
VIN (V)
FIGURE 2-2:
Output Source Resistance (Ω)
180
Supply Current vs. VIN.
7.0
0
6
8
4
2
Output Current (mA) From VOUT+ To VOUT–
FIGURE 2-5:
Current.
10
Output Voltage vs. Output
IOUT = 10 mA
160
ROUT
140
120
100
-50
FIGURE 2-3:
vs. Temperature.
DS21486C-page 4
0
50
Temperature (˚C)
100
Output Source Resistance
© 2005 Microchip Technology Inc.
TCM680
3.0
PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
Pin No.
(8-Pin PDIP,
SOIC)
1
PIN FUNCTION TABLE
Symbol
C1-
Description
Input. First charge pump
capacitor. Negative
connection
2
C2+
Input. Second charge pump
capacitor. Positive
connection.
3
C2-
Input. Second charge pump
capacitor. Negative
connection.
4
VOUT-
Output. Negative Output
voltage
5
GND
Input. Ground connection.
6
VIN
Input. Power supply.
7
C1+
Input. First charge pump
capacitor. Positive
connection.
8
VOUT+
Output. Positive Output
Voltage.
3.1
First Charge Pump Capacitor (C1-)
Negative connection for the charge pump capacitor
(flying capacitor) used to transfer charge from the input
source to a second charge pump capacitor. This
charge pump capacitor is used to double the input voltage and store the charge in the second charge pump
capacitor.
It is recommended that a low ESR (equivalent series
resistance) capacitor be used. Additionally, larger
values will lower the output resistance.
3.2
Second Charge Pump Capacitor
(C2+)
3.4
Negative Output Voltage (VOUT-)
Negative connection for the negative charge pump output capacitor. The negative charge pump output capacitor supplies the output load during the first, third and
fourth phases of the switching cycle. During the second
phase of the switching cycle, charge is restored to the
negative charge pump output capacitor. The negative
output voltage magnitude is approximately twice the
input voltage.
It is recommended that a low ESR (equivalent series
resistance) capacitor be used. Additionally, larger
values will lower the output ripple.
3.5
Ground (GND)
Input zero volt reference.
3.6
Power Supply Input (VIN)
Positive power supply input voltage connection. It is
recommended that a low ESR (equivalent series resistance) capacitor be used to bypass the power supply
input to ground (GND).
3.7
First Charge Pump Capacitor (C1+)
Positive connection for the charge pump capacitor (flying capacitor) used to transfer charge from the input
source to a second charge pump capacitor. Proper
orientation is imperative when using a polarized
capacitor.
3.8
Positive Output Voltage (VOUT+)
Positive connection for the positive charge pump output capacitor. The positive charge pump output capacitor supplies the output load during the first, second and
third phases of the switching cycle. During the fourth
phase of the switching cycle, charge is restored to the
positive charge pump output capacitor. The positive
output voltage magnitude is approximately twice the
input voltage.
It is recommended that a low ESR (equivalent series
resistance) capacitor be used. Additionally, larger
values will lower the output ripple.
Positive connection for the second charge pump
capacitor (flying capacitor) used to transfer charge from
the first charge pump capacitor to the output.
It is recommended that a low ESR (equivalent series
resistance) capacitor be used. Additionally, larger
values will lower the output resistance.
3.3
Second Charge Pump Capacitor
(C2-)
Negative connection for the second charge pump
capacitor (flying capacitor) used to transfer charge from
the first charge pump capacitor to the output. Proper
orientation is imperative when using a polarized
capacitor.
© 2005 Microchip Technology Inc.
DS21486C-page 5
TCM680
VOUT+ Charge Storage - Phase 3
4.0
DETAILED DESCRIPTION
4.3
4.1
VOUT- Charge Storage - Phase 1
The third phase of the clock is identical to the first
phase – the charge stored in C1 produces -5V in the
negative terminal of C1, which is applied to the negative
side of capacitor C2. Since C2+ is at +5V, the voltage
potential across C2 is 10V.
The positive side of capacitors C1 and C2 are connected to +5V at the start of this phase. C1+ is then
switched to ground and the charge in C1– is transferred
to C2–. Since C2+ is connected to +5V, the voltage
potential across capacitor C2 is now 10V.
VIN = +5V
–
VIN = +5V
–
+
SW1
+
–
–
–
VOUT-
C2
–
+
SW4
VOUT-
–
SW2
C2
–
+
SW4
VOUT- Transfer - Phase 2
Phase two of the clock connects the negative terminal
of C2 to the VOUT- storage capacitor C3 and the positive
terminal of C2 to ground, transferring the generated
-10V to C3. Simultaneously, the positive side of capacitor C1 is switched to +5V and the negative side is
connected to ground.
Charge Pump - Phase 3.
VOUT+ Transfer - Phase 4
4.4
The fourth phase of the clock connects the negative
terminal of C2 to ground and transfers the generated
10V across C2 to C4, the VOUT+ storage capacitor.
Simultaneously, the positive side of capacitor C1 is
switched to +5V and the negative side is connected to
ground, and the cycle begins again.
+5V
–
+5V
+
+
SW1
+
–
C1
VOUT+
SW3
–
SW2
-5V
FIGURE 4-2:
DS21486C-page 6
C2
SW4
SW1
C4
VOUT-
+
–
+
C3
-5V
Charge Pump - Phase 1.
–
VOUT+
SW3
FIGURE 4-3:
FIGURE 4-1:
C4
+
C1
C3
-5V
4.2
+
VOUT+
SW3
SW2
SW1
C4
+
C1
+
C3
-10V
+
–
C1
-5V
FIGURE 4-4:
VOUT+
SW3
+
–
SW2
C4
C2
VOUT–
+
SW4
C3
-10V
Charge Pump - Phase 4.
Charge Pump - Phase 2.
© 2005 Microchip Technology Inc.
TCM680
4.5
Maximum Operating Limits
The maximum input voltage rating must be observed.
The TCM680 will clamp the input voltage to 5.8V.
Exceeding this maximum threshold will cause excessive current to flow through the TCM680, potentially
causing permanent damage to the device.
4.6
Switched Capacitor Converter
Power Losses
The overall power loss of a switched capacitor
converter is affected by four factors:
1.
2.
3.
4.
Losses from power consumed by the internal
oscillator, switch drive, etc. These losses will
vary with input voltage, temperature and
oscillator frequency.
Conduction losses in the non-ideal switches.
Losses due to the non-ideal nature of the
external capacitors.
Losses that occur during charge transfer from
the pump to reservoir capacitors when a voltage
difference between the capacitors exists.
The power loss for the TCM680 is calculated using the
following equation:
EQUATION
PLOSS = (IOUT+)2 X ROUT- + (IOUT-)2 X ROUT+ + IIN X VIN
© 2005 Microchip Technology Inc.
DS21486C-page 7
TCM680
5.0
APPLICATIONS INFORMATION
5.1
Voltage Multiplication and
Inversion
The TCM680 performs voltage multiplication and inversion simultaneously, providing positive and negative
outputs (Figure 5-1). The magnitude of both outputs is,
approximately, twice the input voltage. Unlike other
switched capacitor converters, the TCM680 requires
only four external capacitors to provide both functions
simultaneously.
C1 +
22 µF
1C -
VOUT+ 8
2C +
C1+ 7
1
2
+
TCM680
C2
22 µF
VIN
6
VOUT- GND
5
3C 2
4
VOUT+
+
C4
22 µF
VIN
GND
+
C3
22 µF
VOUT-
FIGURE 5-1:
Converter.
5.2
Positive and Negative
Capacitor Selection
The TCM680 requires only 4 external capacitors for
operation, which can be inexpensive, polarized aluminum electrolytic types. For the circuit in Figure 5-1, the
output characteristics are largely determined by the
external capacitors. An expression for ROUT can be
derived as shown below:
EQUATION
ROUT+ = 4(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4 + ESRC2)
+4(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4 + ESRC2)
+1/(fPUMP x C1) + 1/(fPUMP x C2) + ESRC4
ROUT– = 4(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4 + ESRC2)
+4(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4 + ESRC2)
+1/(fPUMP x C1) + 1/(fPUMP x C2) + ESRC3
Assuming all switch resistances are approximately
equal:
EQUATION
+
ROUT = 32RSW + 8ESRC1 + 8ESRC2 + ESRC4
+1/(fPUMP x C1) + 1/(fPUMP x C2)
ROUT– =
32RSW + 8ESRC1 + 8ESRC2 + ESRC3
+1/(fPUMP x C1) + 1/(fPUMP x C2)
DS21486C-page 8
ROUT is typically 140Ω at +25°C with VIN = +5V and C1
and C2 as 4.7 µF low ESR capacitors. The fixed term
(32RSW) is about 130Ω. It can easily be seen that
increasing or decreasing values of C1 and C2 will affect
efficiency by changing ROUT. However, be careful
about ESR. This term can quickly become dominant
with large electrolytic capacitors. Table 5-1 shows
ROUT for various values of C1 and C2 (assume 0.5Ω
ESR). C1 and C4 must be rated at 6 VDC or greater
while C2 and C3 must be rated at 12 VDC or greater.
Output voltage ripple is affected by C3 and C4.
Typically, the larger the value of C3 and C4, the less the
ripple for a given load current. The formula for
VRIPPLE(p-p) is given below:
EQUATION
VRIPPLE(p-p)+ = {1/[2(fPUMP /3) x C4] + 2(ESRC4)} (IOUT+)
VRIPPLE(p-p)– = {1/[2(fPUMP /3) x C3] + 2(ESRC3)} (IOUT–)
For a 10 µF (0.5Ω ESR) capacitor for C3, C4,
fPUMP = 21 kHz and IOUT = 10 mA, the peak-to-peak
ripple voltage at the output will be less than 100 mV. In
most applications (IOUT ≤ 10 mA), 10-20 µF output
capacitors and 1-5 µF pump capacitors will suffice.
Table 5-2 shows VRIPPLE for different values of C3 and
C4 (assume 1 Ω ESR).
TABLE 5-1:
OUTPUT RESISTANCE
VS. C1, C2
C1, C2 (µF)
ROUT+, ROUT- (Ω)
0.1
1089
0.47
339
1
232
3.3
165
4.7
157
10
146
22
141
100
137
TABLE 5-2:
VRIPPLE PEAK-TO-PEAK
VS. C3, C4 (IOUT 10 mA)
C3, C4 (µF)
VRIPPLE(p-p)+,VRIPPLE(p-p)- (mV)
0.47
1540
1
734
3.3
236
4.7
172
10
91
22
52
100
27
© 2005 Microchip Technology Inc.
TCM680
5.3
Paralleling Devices
5.4
To reduce the value of ROUT- and ROUT+, multiple
TCM680 voltage converters can be connected in parallel (Figure 5-2). The output resistance of both outputs
will be reduced, approximately, by a factor of n, where
n is the number of devices connected in parallel.
EQUATION
ROUT- = ROUT- (of TCM680)
n (number of devices)
EQUATION
Output Voltage Regulation
The outputs of the TCM680 can be regulated to provide
+5V from a 3V input source (Figure 5-3). The TCM680
performs voltage multiplication and inversion producing output voltages of, approximately, +6V. The
TCM680 outputs are regulated to +5V with the linear
regulators TC55 and TC59. The TC54 is a voltage
detector providing an indication that the input source is
low and that the outputs may fall out of regulation. The
input source to the TCM680 can vary from 2.8V to 5.5V
without adversely affecting the output regulation making this application well suited for use with single cell
Li-Ion batteries or three alkaline or nickel based
batteries connected in series.
ROUT+ = ROUT+ (of TCM680)
n (number of devices)
Each device requires its own pump capacitors, but all
devices may share the same reservoir capacitors. To
preserve ripple performance, the value of the reservoir
capacitors should be scaled according to the number of
devices connected in parallel.
VIN
–
22 µF
+
+
10 µF
–
C1+ VIN
C1
VOUT+
-
+
10 µF
–
TCM680
+
10 µF
–
C2+
VOUT-
C2- GND
C1+ VIN
C1
-
Positive
Supply
VOUT+
TCM680
+
10 µF
–
C2+
Negative
Supply
VOUT-
C2- GND
–
22 µF
+
GND
FIGURE 5-2:
Paralleling TCM680 for Lower Output Source Resistance.
© 2005 Microchip Technology Inc.
DS21486C-page 9
TCM680
+
–
+
10 µF
–
+
–
C1 +
COUT+
22 µF
VIN
TC55RP5002EXX
VOUT
VIN
+6V
+5 Supply
+
VSS
–
C1 -
1 µF
Ground
TCM680
3V
+
10 µF
–
+
C2 +
C2 -
VSS
VOUT-
-6V
–
VOUT
VIN
1 µF
-5 Supply
GND
–
+
COUT22 µF
TC595002ECB
TC54VC2702Exx
VOUT
VIN
LOW BATTERY
VSS
FIGURE 5-3:
DS21486C-page 10
Split Supply Derived from 3V Battery.
© 2005 Microchip Technology Inc.
TCM680
6.0
PACKAGING INFORMATION
6.1
Packaging Marking Information
8-Lead PDIP (300 mil)
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
Legend:
Note:
*
XX...X
YY
WW
NNN
Example:
TCM680
CPA123
0231
Example:
TCM680
COA0231
123
Customer specific information*
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
Standard OTP marking consists of Microchip part number, year code, week code, and traceability code.
© 2005 Microchip Technology Inc.
DS21486C-page 11
TCM680
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
B1
p
eB
B
Units
Dimension Limits
n
p
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
L
c
§
B1
B
eB
α
β
MIN
.140
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
5
INCHES*
NOM
MAX
8
.100
.155
.130
.170
.145
.313
.250
.373
.130
.012
.058
.018
.370
10
10
.325
.260
.385
.135
.015
.070
.022
.430
15
15
MILLIMETERS
NOM
8
2.54
3.56
3.94
2.92
3.30
0.38
7.62
7.94
6.10
6.35
9.14
9.46
3.18
3.30
0.20
0.29
1.14
1.46
0.36
0.46
7.87
9.40
5
10
5
10
MIN
MAX
4.32
3.68
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
DS21486C-page 12
© 2005 Microchip Technology Inc.
TCM680
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
n
1
h
α
45°
c
A2
A
φ
β
L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
h
L
φ
c
B
α
β
MIN
.053
.052
.004
.228
.146
.189
.010
.019
0
.008
.013
0
0
A1
INCHES*
NOM
8
.050
.061
.056
.007
.237
.154
.193
.015
.025
4
.009
.017
12
12
MAX
.069
.061
.010
.244
.157
.197
.020
.030
8
.010
.020
15
15
MILLIMETERS
NOM
8
1.27
1.35
1.55
1.32
1.42
0.10
0.18
5.79
6.02
3.71
3.91
4.80
4.90
0.25
0.38
0.48
0.62
0
4
0.20
0.23
0.33
0.42
0
12
0
12
MIN
MAX
1.75
1.55
0.25
6.20
3.99
5.00
0.51
0.76
8
0.25
0.51
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
© 2005 Microchip Technology Inc.
DS21486C-page 13
TCM680
NOTES:
DS21486C-page 14
© 2005 Microchip Technology Inc.
TCM680
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
/XX
Temperature
Range
Package
Examples:
a)
TCM680COA: Charge Pump Converter,
b)
TCM680COATR: Charge Pump Converter,
SOIC pkg, 0°C to +70°C.
SOIC pkg, 0°C to +70°C, Tape and Reel.
Device:
TCM680:
Charge Pump Converter
Temperature Range:
C
E
Package:
PA
= Plastic DIP (300 mil Body), 8-lead
OA
= Plastic SOIC, (150 mil Body), 8-lead
OATR = Plastic SOIC, (150 mil Body), 8-lead
(Tape and Reel)
=
0°C to +70°C
= -40°C to +85°C
c)
TCM680CPA: Charge Pump Converter,
PDIP pkg, 0°C to +70°C.
d)
TCM680EOA: Charge Pump Converter,
SOIC pkg, -40°C to +85°C.
e)
TCM680EOATR: Charge Pump Converter,
SOIC pkg, -40°C to +85°C, Tape and Reel.
f)
TCM680EPA: Charge Pump Converter,
PDIP pkg, -40°C to +85°C.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
© 2005 Microchip Technology Inc.
DS21486C-page15
TCM680
NOTES:
DS21486C-page 16
© 2005 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION, INCLUDING BUT NOT
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,
MERCHANTABILITY OR FITNESS FOR PURPOSE.
Microchip disclaims all liability arising from this information and
its use. Use of Microchip’s products as critical components in
life support systems is not authorized except with express
written approval by Microchip. No licenses are conveyed,
implicitly or otherwise, under any Microchip intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART,
PRO MATE, PowerSmart, rfPIC, and SmartShunt are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB,
PICMASTER, SEEVAL, SmartSensor and The Embedded
Control Solutions Company are registered trademarks of
Microchip Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, Linear Active Thermistor,
MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM,
PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo,
PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode,
Smart Serial, SmartTel, Total Endurance and WiperLock are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2005, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2005 Microchip Technology Inc.
DS21486C-page 17
WORLDWIDE SALES AND SERVICE
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Fax: 480-792-7277
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Fax: 905-673-6509
10/31/05
DS21486C-page 18
© 2005 Microchip Technology Inc.