MICROCHIP TC7662AMJA

M
TC7662A
Charge Pump DC-to-DC Converter
Package Type
Features
• Wide Operating Range
- 3V to 18V
• Increased Output Current (40mA)
• Pin Compatible with ICL7662/SI7661/TC7660/
LTC1044
• No External Diodes Required
• Low Output Impedance @ IL = 20mA
- 40Ω Typ.
• No Low-Voltage Terminal Required
• CMOS Construction
• Available in 8-Pin PDIP and 8-Pin CERDIP
Packages
Applications
•
•
•
•
Laptop Computers
Disk Drives
Process Instrumentation
µP-based Controllers
Device Selection Table
Part
Number
Package
Operating
Temp.
Range
TC7662ACPA
8-Pin PDIP
0°C to +70°C
TC7662AEPA
8-Pin PDIP
-40°C to +85°C
TC7662AIJA
8-Pin CERDIP
-25°C to +85°C
TC7662AMJA
8-Pin CERDIP
-55°C to +125°C
 2002 Microchip Technology Inc.
8-Pin PDIP
8-Pin CERDIP
NC
1
8 VDD
C+
2
GND
3
6 NC
C–
4
5 VOUT
TC7662A
7 OSC
General Description
The TC7662A is a pin-compatible upgrade to the
industry standard TC7660 charge pump voltage
converter. It converts a +3V to +18V input to a
corresponding -3V to -18V output using only two lowcost capacitors, eliminating inductors and their
associated cost, size and EMI. In addition to a wider
power supply input range (3V to 18V versus 1.5V to
10V for the TC7660), the TC7662A can source output
currents as high as 40mA. The on-board oscillator
operates at a nominal frequency of 12kHz. Operation
below 12kHz (for lower supply current applications) is
also possible by connecting an external capacitor from
OSC to ground.
The TC7662A directly is recommended for designs
requiring greater output current and/or lower input/
output voltage drop. It is available in 8-pin PDIP and
CERDIP packages in commercial and extended
temperature ranges.
DS21468B-page 1
TC7662A
Functional Block Diagram
8
VDD
I
OSC
TC7662A
7
Q
+
–
F/F
C
Q
Comparator
with Hysteresis
Level
Shift
P SW1
2
Level
Shift
N SW4
CAP
+
+
CP
EXT
GND
3
VREF
+
Level
Shift
OUT
4
Level
Shift
CR
EXT
N SW2
CAP
–
RL
N SW3
5
VOUT
DS21468B-page 2
 2002 Microchip Technology Inc.
TC7662A
1.0
ELECTRICAL
CHARACTERISTICS
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings*
Supply Voltage VDD to GND................................. +18V
Input Voltage (Any Pin) .........(VDD + 0.3) to (VSS – 0.3)
Current into Any Pin ............................................ 10mA
Output Short Circuit ........... Continuous (at 5.5V Input)
ESD Protection ................................................ ±2000V
Package Power Dissipation (TA ≤ 70°C)
8-Pin CERDIP .......................................... 800mW
8-Pin PDIP ............................................... 730mW
Package Thermal Resistance
CPA, EPA θJA ......................................... 140°C/W
IJA, MJA θJA ............................................ 90°C/W
Operating Temperature Range
C Suffix............................................ 0°C to +70°C
I Suffix .......................................... -25°C to +85°C
E Suffix......................................... -40°C to +85°C
M Suffix ...................................... -55°C to +125°C
Storage Temperature Range.............. -65°C to +150°C
TC7662A ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VDD = 15V, TA = +25°C, Test circuit (Figure 3-1) unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VDD
Supply Voltage
3
—
18
V
IS
Supply Current
—
—
—
—
—
—
—
—
510
560
650
190
210
210
—
700
—
—
—
—
—
µA
RL = ∞
VDD = +15V
0°C ≤ TA ≤ +70°C
-55°C ≤ TA ≤ +125°C
VDD = +5V
0°C ≤ TA ≤ +70°C
-55°C ≤ TA ≤ +125°C
RO
Output Source Resistance
—
—
—
40
50
100
50
60
125
Ω
IL = 20mA, VDD = +15V
IL = 40mA, VDD = +15V
IL = 3mA, VDD = +5V
FOSC
Oscillator Frequency
—
12
—
kHz
PEFF
Power Efficiency
93
—
97
—
—
—
%
VDD = +15V
RL = 2kΩ
VEFF
Voltage Efficiency
99
—
96
99.9
—
—
—
—
—
%
VDD = +15V
RL = ∞
Over operating temperature range.
 2002 Microchip Technology Inc.
DS21468B-page 3
TC7662A
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(8-Pin PDIP,
CERDIP)
Symbol
1
NC
No connection.
2
C+
Charge pump capacitor positive terminal.
3
GND
-
Description
Ground terminal.
Charge pump capacitor negative terminal.
4
C
5
VOUT
Output voltage.
6
NC
No connection.
7
OSC
Oscillator control input. Bypass with an external capacitor to slow the oscillator.
8
VDD
Power supply positive voltage input.
DS21468B-page 4
 2002 Microchip Technology Inc.
TC7662A
3.0
DETAILED DESCRIPTION
3.1
The TC7662A is a capacitive charge pump (sometimes
called a switched-capacitor circuit), where four
MOSFET switches control the charge and discharge of
a capacitor.
The functional block diagram shows how the switching
action works. SW1 and SW2 are turned on simultaneously, charging CP to the supply voltage, VDD. This
assumes that the ON resistance of the MOSFETs in
series with the capacitor produce a charging time
(3 time constants) less than the ON time provided by
the oscillator frequency, as shown:
3 (RDS(ON) CP) <CP/(0.5 fOSC).
An oscillator supplies pulses to a flip-flop that is fed to
a set of level shifters. These level shifters then drive
each set of switches at one-half the oscillator
frequency.
The oscillator has a pin that controls the frequency
of oscillation. Pin 7 can have a capacitor added that
is connected to ground. This will lower the frequency
of the oscillator by adding capacitance to the
internal timing capacitor of the TC7662A. (See Typical
Characteristics – Oscillator Frequency vs. COSC.)
TC7662A TEST CIRCUIT
IS
NC
CP
+ 10µF
1
8
2
7
3
TC7662A 6
4
5
VDD
IL (+5V)
NC
COSC
RL
VOUT
(-5V)
CR
 2002 Microchip Technology Inc.
In theory, a voltage converter can approach 100%
efficiency if certain conditions are met:
1.
2.
The drive circuitry consumes minimal power.
The output switches have extremely low ON
resistance and virtually no offset.
The impedances of the pump and reservoir
capacitors are negligible at the pump frequency.
3.
The TC7662A approaches these conditions for
negative voltage conversion if large values of CP and
CR are used.
Note:
In the next cycle, SW1 and SW2 are turned OFF and,
after a very short interval with all switches OFF
(preventing large currents from occurring due to cross
conduction), SW3 and SW4 are turned ON. The charge
in CP is then transferred to CR, but with the polarity
inverted. In this way, a negative voltage is derived.
FIGURE 3-1:
Theoretical Power Efficiency
Considerations
+
10µF
Energy is lost only in the transfer of charge
between capacitors if a change in voltage
occurs.
The energy lost is defined by:
E = 1/2 CP (V12 – V22)
V1 and V2 are the voltages on CP during the pump and
transfer cycles. If the impedances of CP and CR are
relatively high at the pump frequency (refer to Figure 31), compared to the value of RL, there will be a
substantial difference in voltages V1 and V2. Therefore,
it is desirable not only to make CR as large as possible
to eliminate output voltage ripple, but also to employ a
correspondingly large value for CP in order to achieve
maximum efficiency of operation.
3.2
Dos and Don’ts
• Do not exceed maximum supply voltages.
• Do not short circuit the output to V+ supply for
voltages above 5.5V for extended periods;
however, transient conditions including start-up
are okay.
• When using polarized capacitors in the inverting
mode, the + terminal of CP must be connected to
pin 2 of the TC7662A and the + terminal of CR
must be connected to GND (pin 3).
• If the voltage supply driving the TC7662A has a
large source impedance (25-30 ohms), then a
2.2µF capacitor from pin 8 to ground may be
required to limit the rate of rise of the input voltage
to less than 2V/µsec.
DS21468B-page 5
TC7662A
4.0
TYPICAL APPLICATIONS
4.1
Simple Negative Voltage
Converter
Combining the four RSWX terms as RSW, we see that:
RO ≅ 2 x RSW +
The majority of applications will undoubtedly utilize the
TC7662A for generation of negative supply voltages.
Figure 4-1 shows typical connections to provide a
negative supply where a positive supply of +3V to +18V
is available.
FIGURE 4-1:
SIMPLE NEGATIVE
CONVERTER AND ITS
OUTPUT EQUIVALENT
VDD
1
+
10µF
8
2
3
7
TC7662A
6
5
VOUT = -V+
–
10µF
A
+
RSW, the total switch resistance, is a function of supply
voltage and temperature (See Section 5.0, Typical
Characteristics “Output Source Resistance” graphs),
typically 23Ω at +25°C and 5V. Careful selection of CP
and CR will reduce the remaining terms, minimizing the
output impedance. High value capacitors will
reduce the 1/(fPUMP x CP) component, and low ESR
capacitors will lower the ESR term. Increasing the
oscillator frequency will reduce the 1/(fPUMP x CP) term,
but may have the side effect of a net increase in output
impedance when CP > 10µF and there is not enough
time to fully charge the capacitors every cycle. In a typical application when fOSC = 12kHz and C = CP = CR =
10µF:
RO ≅ 2 x 23 +
RO
4
VOUT
–
1
+ 4 x ESRCP + ESRCRΩ
fPUMP x CP
1
+ 4 x ESRCP + ESRCR
(5 x 123 x 10 x 10-6)
RO ≅ (46 + 20 + 5 x ESRC)Ω
V
VDD
V
DD
DD
+
B
The output characteristics of the circuit in Figure 4-1
are those of a nearly ideal voltage source in series with
a resistance as shown in Figure 4-1b. The voltage
source has a value of -(VDD). The output impedance
(RO) is a function of the ON resistance of the internal
MOS switches (shown in the Functional Block
Diagram), the switching frequency, the value of CP and
CR, and the ESR (equivalent series resistance) of CP
and CR. A good first order approximation for RO is:
Since the ESRs of the capacitors are reflected in the
output impedance multiplied by a factor of 5, a high
value could potentially swamp out a low 1/(fPUMP x CP)
term, rendering an increase in switching frequency
or filter capacitance ineffective. Typical electrolytic
capacitors may have ESRs as high as 10Ω.
RO ≅ 2(RSW1 + RSW2 + ESRCP) + 2(RSW3 + RSW4 +
1
+ ESRCR
ESRCP) +
fPUMP x CP
f
(fPUMP = OSC, RSWX = MOSFET switch resistance)
2
DS21468B-page 6
 2002 Microchip Technology Inc.
TC7662A
4.2
Output Ripple
4.3
ESR also affects the ripple voltage seen at the output.
The total ripple is determined by 2 voltages, A and B,
as shown in Figure 4-2. Segment A is the voltage drop
across the ESR of CR at the instant it goes from being
charged by CP (current flowing into CR) to being discharged through the load (current flowing out of CR).
The magnitude of this current change is 2 x IOUT, hence
the total drop is 2 x IOUT x ESRCR volts. Segment B is
the voltage change across CR during time t2, the half of
the cycle when CR supplies current to the load. The
drop at B is IOUT x t2/CR volts. The peak-to-peak ripple
voltage is the sum of these voltage drops:
1
(
Any number of TC7662A voltage converters may be
paralleled to reduce output resistance (Figure 4-3).
The reservoir capacitor, CR, serves all devices, while
each device requires its own pump capacitor, CP. The
resultant output resistance would be approximately:
ROUT =
4.4
)
OUTPUT RIPPLE
t2
0
ROUT (of TC7662A)
n (number of devices)
Cascading Devices
The TC7662A may be cascaded as shown (Figure 4-4)
to produce larger negative multiplication of the initial
supply voltage. However, due to the finite efficiency of
each device, the practical limit is 10 devices for light
loads. The output voltage is defined by:
VRIPPLE ≅ 2 x f
+ 2 x ESRCR x IOUT
PUMP x CR
FIGURE 4-2:
Paralleling Devices
VOUT = – n (VIN)
t1
where n is an integer representing the number of
devices cascaded. The resulting output resistance
would be approximately the weighted sum of the
individual TC7662A ROUT values.
B
V
A
-(VDD)
FIGURE 4-3:
PARALLELING DEVICES LOWERS OUTPUT IMPEDANCE
VDD
1
8
2
7
1
6
2
TC7662A
C1
3
4
"1"
8
RL
7
TC7662A
5
C1
3
4
6
"n"
5
+
FIGURE 4-4:
C2
INCREASED OUTPUT VOLTAGE BY CASCADING DEVICES
VDD
1
8
2
7
1
6
2
TC7662A
+
10µF
3
4
"1"
5
+
10µF
8
TC7662A
3
4
7
6
"n"
5
VOUT*
+
10µF
10µF
*VOUT = -nVDD
 2002 Microchip Technology Inc.
DS21468B-page 7
TC7662A
4.5
Changing the TC7662A Oscillator
Frequency
It is possible to increase the conversion efficiency of
4.7
Combined Negative Voltage
Conversion and Positive Supply
Multiplication
the TC7662A at low load levels by lowering the
oscillator frequency. This reduces the switching losses,
and is shown in Figure 4-5. However, lowering the
oscillator frequency will cause an undesirable increase
in the impedance of the pump (CP) and reservoir (CR)
capacitors; this is overcome by increasing the values of
CP and CR by the same factor that the frequency has
been reduced. For example, the addition of a 100pF
capacitor between pin 7 (OSC) and VDD will lower the
oscillator frequency to 2kHz from its nominal frequency
of 12kHz (multiple of 6), and thereby necessitate a
corresponding increase in the value of CP and CR (from
10µF to 68µF).
Figure 4-7 combines the functions shown in Figure 4-1
and Figure 4-6 to provide negative voltage conversion
and positive voltage doubling simultaneously. This
approach would be, for example, suitable for generating +9V and -5V from an existing +5V supply. In this
instance, capacitors C1 and C3 perform the pump and
reservoir functions, respectively, for the generation of
the negative voltage, while capacitors C2 and C4 are
pump and reservoir, respectively, for the doubled
positive voltage. There is a penalty in this configuration
which combines both functions, however, in that the
source impedances of the generated supplies will be
somewhat higher due to the finite impedance of the
common charge pump driver at pin 2 of the device.
FIGURE 4-5:
FIGURE 4-7:
LOWERING OSCILLATOR
FREQUENCY
COMBINED NEGATIVE
CONVERTER AND
POSITIVE DOUBLER
VDD
VDD
1
2
10µF
+
3
VOUT =
-(VDD – VF)
8
1
7
TC7662A
6
7
TC7662A
5
4
8
2
COSC
VOUT
10µF
+
+
C1
3
6
4
5
D1
D2
VOUT =
(2 VDD) – (2 VF)
+
C4
Positive Voltage Doubling
The TC7662A may be employed to achieve positive
voltage doubling using the circuit shown in Figure 4-6.
In this application, the pump inverter switches of the
TC7662A are used to charge CP to a voltage level of
VDD – VF (where VDD is the supply voltage and VF is
the forward voltage on CP plus the supply voltage (VDD)
applied through diode D2 to capacitor CR). The voltage
thus created on CR becomes (2 VDD) – (2 VF), or twice
the supply voltage minus the combined forward voltage
drops of diodes D1 and D2.
The source impedance of the output (VOUT) will depend
on the output current, but for VDD = 5V and an output
current of 10 mA, it will be approximately 60Ω.
FIGURE 4-6:
3
7
TC7662A
4
The same bidirectional characteristics can be used to
split a higher supply in half, as shown in Figure 4-8.
The combined load will be evenly shared between the
two sides. Because the switches share the load in
parallel, the output impedance is much lower than in
the standard circuits, and higher currents can be drawn
from the device. By using this circuit, and then the
circuit of Figure 4-4, +15V can be converted (via +7.5V
and -7.5V) to a nominal -15V, though with rather high
series resistance (~250Ω).
FIGURE 4-8:
SPLITTING A SUPPLY IN
HALF
RL1
D1
5
VOUT =
(2 VDD) – (2 VF)
D2
6
VDD
+
8
2
Voltage Splitting
POSITIVE VOLTAGE
MULTIPLIER
VDD
1
4.8
C3
+
C2
4.6
+
VOUT =
VDD – V – 50
µF
2
50µF
CP
CR
1
8
2
–
RL2
50µF
7
TC7662A
+
+
+
–
3
6
4
5
+
–
V–
DS21468B-page 8
 2002 Microchip Technology Inc.
TC7662A
5.0
TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Circuit of Figure 3-1, CP = CR = 10µF, CESRCP ≈ CESRCR ≈ 1Ω, TA = 25°C unless otherwise noted.
Supply Current vs. Temperature
Oscillator Frequency vs. COSC
TA = +25°C
10k
600
FREQUENCY (Hz)
SUPPLY CURRENT (µA)
700
500
VDD = 15V
400
300
200
1k
100
VDD = 5V
100
0
-60 -40 -20
10
0
20 40 60 80
TEMPERATURE (°C)
100 120 140
1
160
18
140
16
14
12
10
8
6
-60 -40 -20
0
20 40 60 80
TEMPERATURE (°C)
VDD = 5V, IL = 3mA
100
60
150
100
90
135
Efficiency
120
70
105
60
90
75
Supply
Current
60
30
45
20
30
TA = +25°C
0
8
16
24 32 40
48
56
LOAD CURRENT (mA)
 2002 Microchip Technology Inc.
64
72
15
0
80
OUTPUT RESISTANCE (Ω)
100
10
0
20 40 60 80
TEMPERATURE (°C)
100 120 140
Output Resistance vs. Input Voltage
110
40
VDD = 15V, IL = 20mA
40
165
SUPPLY CURRENT (mA)
POWER CONVERSION EFFICIENCY (%)
80
20
-60 -40 -20
100 120 140
Power Conversion Efficiency vs. ILOAD
50
10,000
120
110
80
100
1000
CAPACITANCE (pF)
Output Resistance vs. Temperature
20
OUTPUT RESISTANCE ( Ω)
FREQUENCY (kHz)
Frequency vs. Temperature
10
TA = +25°C
90
80
70
60
50
IL = 20mA
40
30
20
10
0
2
4
6
10
8
12 14
INPUT VOLTAGE (V)
16
18
20
DS21468B-page 9
TC7662A
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
Package marking data not available at this time.
6.2
Package Dimensions
8-Pin Plastic DIP
PIN 1
.260 (6.60)
.240 (6.10)
.045 (1.14)
.030 (0.76)
.070 (1.78)
.040 (1.02)
.310 (7.87)
.290 (7.37)
.400 (10.16)
.348 (8.84)
.200 (5.08)
.140 (3.56)
.040 (1.02)
.020 (0.51)
.150 (3.81)
.115 (2.92)
.110 (2.79)
.090 (2.29)
.015 (0.38)
.008 (0.20)
3° MIN.
.400 (10.16)
.310 (7.87)
.022 (0.56)
.015 (0.38)
Dimensions: inches (mm)
8-Pin CDIP (Narrow)
.110 (2.79)
.090 (2.29)
PIN 1
.300 (7.62)
.230 (5.84)
.020 (0.51) MIN.
.055 (1.40) MAX.
.320 (8.13)
.290 (7.37)
.400 (10.16)
.370 (9.40)
.200 (5.08)
.160 (4.06)
.040 (1.02)
.020 (0.51)
.150 (3.81)
MIN.
.200 (5.08)
.125 (3.18)
.015 (0.38)
.008 (0.20)
3° MIN.
.400 (10.16)
.320 (8.13)
.065 (1.65) .020 (0.51)
.045 (1.14) .016 (0.41)
Dimensions: inches (mm)
DS21468B-page 10
 2002 Microchip Technology Inc.
TC7662A
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002 Microchip Technology Inc.
DS21468B-page11
TC7662A
NOTES:
DS21468B-page12
 2002 Microchip Technology Inc.
TC7662A
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
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© 2002, Microchip Technology Incorporated, Printed in the
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 2002 Microchip Technology Inc.
DS21468B-page 13
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Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-7456
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
Atlanta
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-640-0034 Fax: 770-640-0307
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Kokomo
2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-6766200 Fax: 86-28-6766599
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-2350361 Fax: 86-755-2366086
San Jose
Hong Kong
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
New York
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
03/01/02
'!" '
DS21468B-page 14
 2002 Microchip Technology Inc.