TC682
Inverting Voltage Doubler
Features:
General Description:
• 99.9% Voltage Conversion Efficiency
• 92% Power Conversion Efficiency
• Wide Input Voltage Range:
- +2.4V to +5.5V
• Only 3 External Capacitors Required
• 185 μA Supply Current
• Space-Saving 8-Pin SOIC and 8-Pin PDIP
Packages
The TC682 is a CMOS charge pump converter that
provides an inverted doubled output from a single
positive supply. An on-board 12 kHz (typical) oscillator
provides the clock and only 3 external capacitors are
required for full circuit implementation.
Low output source impedance (typically 140Ω),
provides output current up to 10 mA. The TC682 features low quiescent current and high efficiency, making
it the ideal choice for a wide variety of applications that
require a negative voltage derived from a single
positive supply (for example: generation of -6V from a
3V lithium cell or -10V generated from a +5V logic
supply).
Applications:
•
•
•
•
•
•
•
-10V from +5V Logic Supply
-6V from a Single 3V Lithium Cell
Portable Handheld Instruments
Cellular Phones
LCD Display Bias Generator
Panel Meters
Operational Amplifier Power Supplies
The minimum external parts count and small physical
size of the TC682 make it useful in many mediumcurrent, dual voltage analog power supplies.
Functional Block Diagram
VIN
Device Selection Table
Package
Operating
Temp.
Range
TC682COA
8-Pin SOIC
0°C to +70°C
TC682CPA
8-Pin PDIP
0°C to +70°C
TC682EOA
8-Pin SOIC
-40°C to +85°C
Part
Number
TC682EPA
8-Pin PDIP
+2.4V < VIN < +5.5V
VIN
C1
+
C 1+
–
C 1–
+
C 2+
–
C 2–
TC682
C2
-40°C to +85°C
VOUT
VOUT = -(2 x VIN )
VOUT
GND
+
COUT
GND
All Caps = 3.3 μF
Package Type
8-Pin PDIP
C1– 1
C2+ 2
C2– 3
VOUT 4
© 2006 Microchip Technology Inc.
TC682CPA
TC682EPA
8-Pin SOIC
8
NC
C 1–
1
7
C 1+
C 2+
2
6
VIN
C 2–
3
5
GND
VOUT
4
TC682COA
TC682EOA
8
NC
7
C1+
6
VIN
5
GND
DS21453C-page 1
TC682
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
VIN .......................................................................+5.8V
VIN dV/dT ........................................................ 1V/μsec
VOUT ...................................................................-11.6V
Short-Circuit Duration - VOUT ..................... Continuous
Power Dissipation (TA ≤ 70°C)
8-Pin PDIP ..............................................730 mW
8-Pin SOIC ..............................................470 mW
Operating Temperature Range.............-40°C to +85°C
Storage Temperature (Unbiased) .......-65°C to +150°C
*Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC682 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Over operating temperature range, VIN = +5V, test circuit Figure 3-1 unless otherwise noted.
Min
Typ
Max
Units
VIN
Symbol
Supply Voltage Range
Parameter
2.4
—
5.5
V
RL = 2 kΩ
Test Conditions
IIN
Supply Current
—
—
185
—
300
400
μA
RL = ∞, TA = 25°C
RL = ∞
ROUT
VOUT Source Resistance
—
—
140
—
170
180
230
320
Ω
IL– = 10 mA, TA = 25°C
IL– = 10 mA
IL– = 5 mA, VIN = 2.8V
FOSC
Oscillator Frequency
—
12
—
kHz
PEFF
Power Efficiency
90
92
—
%
RL = 2 kΩ, TA = 25°C
VOUTEFF
Voltage Conversion Efficiency
99
99.9
—
%
VOUT, RL = ∞
DS21453C-page 2
© 2006 Microchip Technology Inc.
TC682
2.0
PIN DESCRIPTION
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(8-Pin PDIP,
SOIC)
Symbol
1
C1–
Input. Capacitor C1 negative terminal.
2
C2+
Input. Capacitor C2 positive terminal.
3
C2–
Input. Capacitor C2 negative terminal.
4
VOUT
Output. Negative output voltage (-2VIN).
5
GND
Input. Ground.
Description
6
VIN
Input. Power supply voltage.
7
C1+
Input. Capacitor C1 positive terminal.
8
NC
No connection.
© 2006 Microchip Technology Inc.
DS21453C-page 3
TC682
3.0
DETAILED DESCRIPTION
+5V
VIN
(+5V)
C1
7
+
+
–
SW1
C 1+
1
–
C2
6
VIN
+
C 1–
–
TC682
2
C 2+
3
C 2–
C1
SW2
VOUT 4
–
5
+
COUT
RL
VOUT
+
C2
–
–
+
SW4
C3
-10V
V–OUT
GND
SW3
FIGURE 3-3:
Charge Pump – Phase 2
GND
All Caps = 3.3 μF
FIGURE 3-1:
3.1
3.3
TC682 Test Circuit
Phase 1
VSS charge storage – before this phase of the clock
cycle, capacitor C1 is already charged to +5V. C1+ is
then switched to ground and the charge in C1– is
transferred to C2–. Since C2+ is at +5V, the voltage
potential across capacitor C2 is now -10V.
+
–
SW3
VOUT
+
C1
–
SW2
C2
SW4
–
+
C3
3.2
Charge Pump – Phase 1
Phase 2
VSS transfer – phase two of the clock connects the negative terminal of C2 to the negative side of reservoir
capacitor C3 and the positive terminal of C2 to ground,
transferring the generated -10V to C3. Simultaneously,
the positive side of capacitor C1 is switched to +5V and
the negative side is connected to ground. C2 is then
switched to VCC and GND and Phase 1 begins again.
DS21453C-page 4
3.4
Efficiency Considerations
• The charge pump switches have virtually no offset
and are extremely low on resistance.
• Minimal power is consumed by the drive circuitry.
• The impedances of the reservoir and pump
capacitors are negligible.
For the TC682, efficiency is as shown below:
-5V
FIGURE 3-2:
The TC682 has on-chip Zener diodes that clamp VIN
to approximately 5.8V, and VOUT to -11.6V. Never
exceed the maximum supply voltage or excessive
current will be shunted by these diodes, potentially
damaging the chip. The TC682 will operate over the
entire operating temperature range with an input
voltage of 2V to 5.5V.
Theoretically a charge pump voltage multiplier can
approach 100% efficiency under the following
conditions:
VIN = +5V
SW1
Maximum Operating Limits
Voltage Efficiency = VOUT / (-2VIN)
VOUT = -2VIN + VDROP
VDROP = (IOUT) (ROUT)
Power Loss
= IOUT (VDROP)
There will be a substantial voltage difference between
VOUT and -2VIN if the impedances of the pump capacitors C1 and C2 are high with respect to their respective
output loads.
Larger values of reservoir capacitor C3 will reduce
output ripple. Larger values of both pump and reservoir
capacitors improve the efficiency. See Section 4.2
“Capacitor Selection” “Capacitor Selection”.
© 2006 Microchip Technology Inc.
TC682
4.0
TYPICAL APPLICATIONS
4.1
Negative Doubling Converter
Output voltage ripple is affected by C3. Typically the
larger the value of C3 the less the ripple for a given load
current. The formula for P-P VRIPPLE is given below:
The most common application of the TC682 is as a
charge pump voltage converter which provides a
negative output of two times a positive input voltage
(Figure 4-1).
+
1
+
C 1–
TABLE 4-1:
C1+ 7
2 C +
2
22 μF
TC682
3 C –
2
4
V–OUT
VIN
GND
6
VIN
5
GND
+
C3
22 μF
V–OUT
FIGURE 4-1:
4.2
For a 10 μF (0.5Ω ESR) capacitor for C3, fPUMP = 10
kHz and IOUT = 10 mA the peak-to-peak ripple voltage
at the output will be less then 60 mV. In most
applications (IOUT < = 10 mA) a 10-20 μF capacitor and
1-5 μF pump capacitors will suffice. Table 4-2 shows
VRIPPLE for different values of C3 (assume 1Ω ESR).
22 μF
C1
C2
VRIPPLE = {1/[2(fPUMP x C3)] + 2(ESRC3)} (IOUT)
Inverting Voltage Doubler
Capacitor Selection
The output resistance of the TC682 is determined, in
part, by the ESR of the capacitors used. An expression
for ROUT is derived as shown below:
ROUT = 2(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4 + ESRC2)
+2(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4 + ESRC2)
+1/(fPUMP x C1) +1/(fPUMP x C2)
+ESRC3
OUTPUT RESISTANCE
VS. C1, C2
C1, C2 (μF)
ROUT(Ω)
0.05
4085
0.10
2084
0.47
510
1.00
285
3.30
145
5.00
125
10.00
105
22.00
94
100.00
87
TABLE 4-2:
VRIPPLE PEAK-TO-PEAK
VS. C3 (IOUT 10mA)
C3 (μF)
VRIPPLE (mV)
0.50
1020
Assuming all switch resistances are approximately
equal:
1.00
520
3.30
172
ROUT = 16RSW + 4ESRC1 + 4ESRC2 + ESRC3
+1/(fPUMP x C1) +1/(fPUMP x C2)
5.00
120
10.00
70
22.00
43
100.00
25
ROUT is typically 140Ω at +25°C with VIN = +5V and 3.3
μF low ESR capacitors. The fixed term (16RSW) is
about 80-90Ω. It can be seen easily that increasing or
decreasing values of C1 and C2 will affect efficiency by
changing ROUT. However, be careful about ESR. This
term can quickly become dominant with large electrolytic capacitors. Table 4-1 shows ROUT for various
values of C1 and C2 (assume 0.5Ω ESR). C1 must be
rated at 6VDC or greater while C2 and C3 must be
rated at 12VDC or greater.
© 2006 Microchip Technology Inc.
DS21453C-page 5
TC682
4.3
Paralleling Devices
4.4
Paralleling multiple TC682s reduces the output
resistance of the converter. The effective output
resistance is the output resistance of a single device
divided by the number of devices. As illustrated in
Figure , each requires separate pump capacitors C1
and C2, but all can share a single reservoir capacitor.
-5V Regulated Supply From A
Single 3V Battery
Figure 4-3 shows a -5V power supply using one 3V
battery. The TC682 provides -6V at VOUT, which is
regulated to -5V by the negative LDO. The input to the
TC682 can vary from 3V to 5.5V without affecting
regulation appreciably. A TC54 device is connected to
the battery to detect undervoltage. This unit is set to
detect at 2.7V. With higher input voltage, more current
can be drawn from the outputs of the TC682. With 5V
at VIN, 10 mA can be drawn from the regulated output.
Assuming 150Ω source resistance for the converter,
with IL–= 10 mA, the charge pump will droop 1.5V.
VIN
C1+
+
10 μF
–
VIN
10 μF
C1–
+
–
C1+
C1 –
TC682
TC682
C2+
+
10 μF
–
+
10 μF
–
V–OUT
C2–
VIN
GND
C2 +
C2 –
V–OUT
GND
Negative
Supply
–
+
C–OUT 22 μF
GND
FIGURE 4-2:
Paralleling TC682 for Lower Output Source Resistance
+
10 μF
–
+
–
C1+
VIN
C1–
Ground
3V
+
10 μF
–
C2+
TC682
+
VSS
V–OUT
C2–
GND
VOUT
VIN
–
22 μF
+ C
–
OUT
–
1 μF
-5 Supply
Negative LDO
Regulator
TC54VC2702Exx
VOUT
VIN
LOW BATTERY
VSS
FIGURE 4-3:
DS21453C-page 6
Negative Supply Derived from 3V Battery
© 2006 Microchip Technology Inc.
TC682
5.0
TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Circuit of Figure 3-1, C1 = C2 = COUT = 3.3 μF, TA = 25°C unless otherwise noted.
Output Resistance vs. VIN
VOUT vs. Load Current
240
-7.5
220
-8.0
200
-8.5
VOUT (V)
OUTPUT RESISTANCE (Ω)
C1 – C3 = 3.3 µF
180
-9.0
160
-9.5
140
-10.0
120
VIN = 5V
-10.5
1
2
3
5
4
0
6
5
VIN (V)
Supply Current vs. VIN
250
200
150
100
50
1
2
3
15
Output Source Resistance vs. Temperature
NO LOAD
OUTPUT SOURCE RESISTANCE (Ω)
SUPPLY CURRENT (μA)
300
10
LOAD CURRENT (mA)
5
4
6
VIN (V)
200
VIN = 5V
IOUT = 10 mA
180
160
140
120
100
80
-50
0
50
100
TEMPERATURE (°C)
Output Ripple vs. Output Current
OUTPUT RIPPLE (mV PK-PK)
200
VIN = 5V
150
C3 = 10 μF
100
C3 = 100 μF
50
0
0
5
10
15
20
OUTPUT CURRENT (mA)
© 2006 Microchip Technology Inc.
DS21453C-page 7
TC682
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
Package marking data not available at this time.
6.2
Taping Form
Component Taping Orientation for 8-Pin SOIC (Narrow) Devices
User Direction of Feed
Pin 1
W
P
Standard Reel Component Orientation
for 713 Suffix Device
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
12 mm
8 mm
2500
13 in
8-Pin SOIC (N)
6.3
Package Dimensions
8-Pin Plastic DIP
Pin 1
.260 (6.60)
.240 (6.10)
.045 (1.14)
.030 (0.76)
.070 (1.78)
.040 (1.02)
.310 (7.87)
.290 (7.37)
.400 (10.16)
.348 (8.84)
.200 (5.08)
.140 (3.56)
.040 (1.02)
.020 (0.51)
.150 (3.81)
.115 (2.92)
.110 (2.79)
.090 (2.29)
.022 (0.56)
.015 (0.38)
.015 (0.38)
.008 (0.20)
3° Min.
.400 (10.16)
.310 (7.87)
Dimensions: inches (mm)
DS21453C-page 8
© 2006 Microchip Technology Inc.
TC682
8-Pin SOIC
Pin 1
.157 (3.99)
.150 (3.81)
.244 (6.20)
.228 (5.79)
.050 (1.27) Typ.
.197 (5.00)
.189 (4.80)
.069 (1.75)
.053 (1.35)
.020 (0.51) .010 (0.25)
.013 (0.33) .004 (0.10)
.010 (0.25)
.007 (0.18)
8° Max.
.050 (1.27)
.016 (0.40)
Dimensions: inches (mm)
© 2006 Microchip Technology Inc.
DS21453C-page 9
TC682
NOTES:
DS21453C-page 10
© 2006 Microchip Technology Inc.
TC682
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© 2006 Microchip Technology Inc.
DS21453C-page 11
TC682
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DS21453C-page 12
© 2006 Microchip Technology Inc.
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•
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DS21453C-page 13
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Mountain View, CA
Tel: 650-215-1444
Fax: 650-961-0286
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
China - Shunde
Tel: 86-757-2839-5507
Fax: 86-757-2839-5571
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
China - Xian
Tel: 86-29-8833-7250
Fax: 86-29-8833-7256
Malaysia - Penang
Tel: 60-4-646-8870
Fax: 60-4-646-5086
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Taiwan - Hsin Chu
Tel: 886-3-572-9526
Fax: 886-3-572-6459
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
02/16/06
DS21453C-page 14
© 2006 Microchip Technology Inc.