TI SN74AUC2G125DCUR

SN74AUC2G125
DUAL BUS BUFFER GATE
WITH 3-STATE OUTPUTS
www.ti.com
SCES532A – DECEMBER 2003 – REVISED MARCH 2005
FEATURES
•
•
•
•
•
•
•
•
•
DCT OR DCU PACKAGE
(TOP VIEW)
Available in the Texas Instruments
NanoStar™ and NanoFree™ Packages
Optimized for 1.8-V Operation and Is 3.6-V I/O
Tolerant to Support Mixed-Mode Signal
Operation
Ioff Supports Partial-Power-Down Mode
Operation
Sub-1-V Operable
Max tpd of 1.8 ns at 1.8 V
Low Power Consumption, 10 µA at 1.8 V
±8-mA Output Drive at 1.8 V
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
1OE
1A
2Y
GND
1
8
2
7
3
6
4
5
VCC
2OE
1Y
2A
YEP OR YZP PACKAGE
(BOTTOM VIEW)
GND
2Y
1A
1OE
4 5
3 6
2 7
1 8
2A
1Y
2OE
VCC
DESCRIPTION/ORDERING INFORMATION
This dual bus buffer gate is operational at 0.8-V to 2.7-V VCC, but is designed specifically for 1.65-V to 1.95-V
VCC operation.
The SN74AUC2G125 features dual line drivers with 3-state outputs. The outputs are disabled when the
associated output-enable (OE) input is high.
NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the
die as the package.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,
preventing damaging current backflow through the device when it is powered down.
For more information about AUC Little Logic devices, please refer to the TI application report, Applications of
Texas Instruments AUC Sub-1-V Little Logic Devices, literature number SCEA027.
ORDERING INFORMATION
PACKAGE (1)
TA
–40°C to 85°C
(1)
(2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING (2)
NanoStar™ – WCSP (DSBGA)
0.23-mm Large Bump – YEP
Tape and reel
SN74AUC2G125YEPR
NanoFree™ – WCSP (DSBGA)
0.23-mm Large Bump – YZP (Pb-free)
Tape and reel
SN74AUC2G125YZPR
SSOP – DCT
Tape and reel
SN74AUC2G125DCTR
U25_ _ _
VSSOP – DCU
Tape and reel
SN74AUC2G125DCUR
UM_
_ _ _UM_
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
DCT: The actual top-side marking has three additional characters that designate the year, month, and assembly/test site.
DCU: The actual top-side marking has one additional character that designates the assembly/test site.
YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following
character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, ⋅ = Pb-free).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NanoStar, NanoFree are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2003–2005, Texas Instruments Incorporated
SN74AUC2G125
DUAL BUS BUFFER GATE
WITH 3-STATE OUTPUTS
www.ti.com
SCES532A – DECEMBER 2003 – REVISED MARCH 2005
FUNCTION TABLE
(EACH BUFFER)
INPUTS
OE
A
OUTPUT
Y
L
H
H
L
L
L
H
X
Z
LOGIC DIAGRAM (POSITIVE LOGIC)
1
1OE
1A
2
6
1Y
7
2OE
5
2A
2
3
2Y
SN74AUC2G125
DUAL BUS BUFFER GATE
WITH 3-STATE OUTPUTS
www.ti.com
Absolute Maximum Ratings
SCES532A – DECEMBER 2003 – REVISED MARCH 2005
(1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VCC
Supply voltage range
–0.5
3.6
V
VI
Input voltage range (2)
–0.5
3.6
V
–0.5
3.6
V
–0.5
VCC + 0.5
state (2)
UNIT
VO
Voltage range applied to any output in the high-impedance or power-off
VO
Output voltage range (2)
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±20
mA
±100
mA
Continuous current through VCC or GND
θJA
Package thermal impedance (3)
Tstg
(1)
(2)
(3)
DCT package
220
DCU package
227
YEP/YZP package
102
Storage temperature range
–65
V
°C/W
150
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.
The package thermal impedance is calculated in accordance with JESD 51-7.
Recommended Operating Conditions (1)
VCC
Supply voltage
VCC = 0.8 V
VIH
High-level input voltage
MIN
MAX
0.8
2.7
VCC = 1.1 V to 1.95 V
0.65 × VCC
0
VCC = 1.1 V to 1.95 V
0.35 × VCC
VCC = 2.3 V to 2.7 V
VI
Input voltage
VO
Output voltage
IOH
High-level output current
IOL
Low-level output current
0
3.6
Active state
0
VCC
3-state
0
3.6
VCC = 0.8 V
–0.7
VCC = 1.1 V
–3
VCC = 1.4 V
–5
VCC = 1.65 V
–8
VCC = 2.3 V
–9
VCC = 0.8 V
0.7
VCC = 1.1 V
3
VCC = 1.4 V
5
VCC = 1.65 V
8
VCC = 0.8 V to 1.65
TA
(1)
(2)
(3)
Input transition rise or fall rate
Operating free-air temperature
V
0.7
VCC = 2.3 V
∆t/∆v
V
1.7
VCC = 0.8 V
Low-level input voltage
V
VCC
VCC = 2.3 V to 2.7 V
VIL
UNIT
V
V
mA
mA
9
V (2)
20
VCC = 1.65 V to 1.95 V (3)
20
VCC = 2.3 V to 2.7 V (3)
15
–40
85
ns/V
°C
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
The data was taken at CL = 15 pF, RL = 2 kΩ (see Figure 1).
The data was taken at CL = 30 pF, RL = 500 Ω (see Figure 1).
3
SN74AUC2G125
DUAL BUS BUFFER GATE
WITH 3-STATE OUTPUTS
www.ti.com
SCES532A – DECEMBER 2003 – REVISED MARCH 2005
Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VOH
VOL
VCC
TYP (1)
MIN
MAX
IOH = –100 µA
0.8 V to 2.7 V
IOH = –0.7 mA
0.8 V
IOH = –3 mA
1.1 V
0.8
IOH = –5 mA
1.4 V
1
IOH = –8 mA
1.65 V
1.2
IOH = –9 mA
2.3 V
1.8
IOL = 100 µA
0.8 V to 2.7 V
IOL = 0.7 mA
0.8 V
IOL = 3 mA
1.1 V
0.3
IOL = 5 mA
1.4 V
0.4
IOL = 8 mA
1.65 V
0.45
IOL = 9 mA
2.3 V
0.6
UNIT
VCC – 0.1
0.55
V
0.2
0.25
V
VI = VCC or GND
0 to 2.7 V
±5
µA
Ioff
VI or VO = 2.7 V
0
±10
µA
IOZ
VO = VCC or GND
2.7 V
±10
µA
ICC
VI = VCC or GND,
10
µA
Ci
VI = VCC or GND
2.5 V
2.5
pF
Co
VO = VCC or GND
2.5 V
5.5
pF
II
(1)
A or OE inputs
IO = 0
0.8 V to 2.7 V
All typical values are at TA = 25°C.
Switching Characteristics
over recommended operating free-air temperature range, CL = 15 pF (unless otherwise noted) (see Figure 1)
VCC = 1.2 V
± 0.1 V
VCC = 1.5 V
± 0.1 V
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
FROM
(INPUT)
TO
(OUTPUT)
VCC = 0.8 V
TYP
MIN
MAX
MIN
MAX
MIN
TYP
MAX
MIN
MAX
tpd
A
Y
5.1
1
3.6
0.7
2.3
0.6
1
1.8
0.5
1.3
ns
ten
OE
Y
5.9
1.1
4.1
1
2.6
0.9
1.3
2
0.8
1.5
ns
tdis
OE
Y
6.6
2
4.8
1.5
3.5
1.8
2.6
3.7
1.4
2.9
ns
PARAMETER
UNIT
Switching Characteristics
over recommended operating free-air temperature range, CL = 30 pF (unless otherwise noted) (see Figure 1)
FROM
(INPUT)
TO
(OUTPUT)
tpd
A
ten
OE
tdis
OE
PARAMETER
4
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
UNIT
MIN
TYP
MAX
MIN
MAX
Y
0.8
1.6
2.6
0.7
1.8
ns
Y
1.1
1.7
2.9
0.9
2.2
ns
Y
1.7
2.3
3.6
0.8
2
ns
SN74AUC2G125
DUAL BUS BUFFER GATE
WITH 3-STATE OUTPUTS
www.ti.com
SCES532A – DECEMBER 2003 – REVISED MARCH 2005
Operating Characteristics
TA = 25°C
PARAMETER
Cpd
Power dissipation
capacitance
TEST
CONDITIONS
VCC = 0.8 V
VCC = 1.2 V
VCC = 1.5 V
VCC = 1.8 V
VCC = 2.5 V
TYP
TYP
TYP
TYP
TYP
f = 10 MHz
16
16
16
17
18
UNIT
pF
5
SN74AUC2G125
DUAL BUS BUFFER GATE
WITH 3-STATE OUTPUTS
www.ti.com
SCES532A – DECEMBER 2003 – REVISED MARCH 2005
PARAMETER MEASUREMENT INFORMATION
2 × VCC
S1
RL
From Output
Under Test
Open
GND
CL
(see Note A)
TEST
S1
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
Open
2 × VCC
GND
RL
LOAD CIRCUIT
VCC
CL
RL
V∆
0.8 V
1.2 V ± 0.1 V
1.5 V ± 0.1 V
1.8 V ± 0.15 V
2.5 V ± 0.2 V
1.8 V ± 0.15 V
2.5 V ± 0.2 V
15 pF
15 pF
15 pF
15 pF
15 pF
30 pF
30 pF
2 kΩ
2 kΩ
2 kΩ
2 kΩ
2 kΩ
1 kΩ
500 Ω
0.1 V
0.1 V
0.1 V
0.15 V
0.15 V
0.15 V
0.15 V
VCC
Timing Input
VCC/2
0V
tw
tsu
th
VCC
VCC/2
Input
VCC/2
VCC
VCC/2
VCC/2
Data Input
0V
0V
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VOLTAGE WAVEFORMS
PULSE DURATION
VCC
VCC/2
Input
VCC/2
0V
tPHL
tPLH
VOH
VCC/2
Output
VCC/2
VOL
tPHL
VCC/2
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
VCC/2
VCC/2
0V
tPZL
tPLZ
VCC
VCC/2
tPZH
VOH
Output
Output
Waveform 1
S1 at 2 × VCC
(see Note B)
tPLH
VCC/2
VCC
Output
Control
Output
Waveform 2
S1 at GND
(see Note B)
VOL + V∆
VOL
tPHZ
VCC/2
VOH - V∆
VOH
≈0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, slew rate ≥ 1 V/ns.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. All parameters and waveforms are not applicable to all devices.
Figure 1. Load Circuit and Voltage Waveforms
6
PACKAGE OPTION ADDENDUM
www.ti.com
6-Jun-2005
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
74AUC2G125DCURE4
ACTIVE
US8
DCU
8
3000
Pb-Free
(RoHS)
CU NIPDAU
Level-1-260C-UNLIM
SN74AUC2G125DCTR
ACTIVE
SM8
DCT
8
3000
Pb-Free
(RoHS)
CU NIPDAU
Level-1-260C-UNLIM
SN74AUC2G125DCUR
ACTIVE
US8
DCU
8
3000
Pb-Free
(RoHS)
CU NIPDAU
Level-1-260C-UNLIM
SN74AUC2G125YEPR
ACTIVE
WCSP
YEP
8
3000
TBD
SNPB
Level-1-260C-UNLIM
SN74AUC2G125YZPR
ACTIVE
WCSP
YZP
8
3000
Pb-Free
(RoHS)
SNAGCU
Level-1-260C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
MECHANICAL DATA
MPDS049B – MAY 1999 – REVISED OCTOBER 2002
DCT (R-PDSO-G8)
PLASTIC SMALL-OUTLINE PACKAGE
0,30
0,15
0,65
8
0,13 M
5
0,15 NOM
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
2,90
2,70
4,25
3,75
Gage Plane
PIN 1
INDEX AREA
1
0,25
4
0° – 8°
3,15
2,75
0,60
0,20
1,30 MAX
Seating Plane
0,10
0,10
0,00
NOTES: A.
B.
C.
D.
4188781/C 09/02
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion
Falls within JEDEC MO-187 variation DA.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
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