8013-2323-AU 808nm 1000mW IR Laser Diodes AUTO PACKAGE Specifications Device Package Type Laser Diode TO-5(φ9.0mm) ■Absolute Maximum Ratings(Tc=25℃) Symbols Characteristics Po Reverse Voltage Reverse Voltage Vr Voltage PIN PD Vr(PIN) Top Operating Temperature Tstg Storage Temperature Ratings 1000 2 10 -10∼+30 -40∼+85 ■Electrical and optical Characteristics(Tc=25℃) Symbols Conditions Characteristics Ith Threshold Current Iop Po=1000mW Operating Current Vop Po=1000mW Operating Voltage 500mW Slope Efficiency η I(1000mW)-I(500mW Monitor Current Beam Divergence Parallel (FWHM) Prependicular Parallel Deviation Angle Perpendicular Deviation Angle Emission Point Accuracy Lasing Wavelength Im θ// θ⊥ Δθ// Δθ⊥ ΔX ΔY ΔZ λ Po=1000mW Po=1000mW Po=1000mW Po=1000mW Po=1000mW Po=1000mW Po=1000mW Po=1000mW Po=1000mW Units mW V V ℃ ℃ Min. - Typ. 300 1400 2.1 Max. 500 2000 3 Units mA mA Volts 0.5 0.9 1.0 mW/mA 0.3 4 20 -3 -3 -50 -50 -50 804 1.5 9 30 807 6.0 17 40 3 3 50 50 50 810 mA deg. deg. deg. deg. μm μm μm nm Im is sorting by custom's need ◎θ// and θ⊥ are defined as the angle within which the intensity is 50% of the peak value. DB LECTRO Inc. 3600 boul. Matte suite i Brossard Qc J4Y-2Z2 tel:(450)-444-1424 fax:(450)-444-4714 www.dblectro.com