Unmounted Laser Bars 20 W cw ... 100 W qcw SPL Bxxx Features • Unmounted monolithic linear array • High efficiency MOVPE-grown quantum well structure • Highly reliable strained layer InGa(Al)As/GaAs material • Standard wavelength selection is ± 3 nm, others on request • Solderable p- and n-side metalization Applications • Pumping of solid state lasers (Nd: YAG, Yb: YAG, ...) • Direct industrial applications (soldering, surface treatment, marking, ...) • Heating, illumination • Medical and printing application Type Power Wavelength1) Ordering Code SPL BG81 SPL BG94 SPL BG98 25 W .. 30 W cw 808 nm 940 nm 980 nm Q62702-P1654 Q62702-P1733 Q62702-P3259 SPL BS79 SPL BS81 SPL BS94 50 W .. 100 W qcw 794 nm 808 nm 940 nm Q62702-P3257 Q62702-P1719 Q62702-P3258 1) Other wavelengths in the range of 780 ... 980 nm are available on request. Semiconductor Group 1/2 1997-11-24 SPL Bxxx Characterictics (TA = 25 °C) Parameter Symbol Wavelength Typical Values Unit BGxx BSxx 20 ... 30 cw 50 ... 100 qcw W Recommended output power 1) Popt – Catastrophic optical damage limit 1), 2) PCOD ≤ 808nm > 80 ≥ 940nm > 130 > 110 > 200 W Ith – < 17 A η – > 0.85 ηtot – > 35 Beam divergence (FWHM) θ⊥ × θ|| ≤ 808nm ≥ 940nm Standard pulse wavelength 2), 3) λpulse ≤ 808nm 802 ≥ 940nm 934 Spectral width (FWHM) ∆λ – Fill factor F – 50 80 % Emitter width (Structure) w – 200 (20 × 3) 100 – µm µm Pitch p – 400 126 µm Bar width (Emitters per bar) W – 10.0 25 10.0 77 mm Cavity length L – 600 µm Bar thickness H – 115 ± 10 µm Threshold current 2) Differential quantum efficiency 2) Total conversion efficiency 1) < 11 45° × 12° 38° × 12° 804 935 <4 W/A % Deg. nm nm 1) Depending on mounting technique, i.e. on the resulting thermal resistance. 2) Calculated from measurements on one emitter of an unmounted bar (1 µs pulses at 1 kHz repetition rate). 3) Differing pulse wavelengths are available on request. Semiconductor Group 2/2 1997-11-24