ABR3500W - ABR3510W AVALANCHE BRIDGE RECTIFIERS BR50W PRV : 50 - 1000 Volts Io : 35 Amperes 0.732 (18.6) 0.692 (17.5) FEATURES : * * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop ldeal for printed circuit board Pb / RoHS Free 1.130 (28.7) 1.120 (28.4) 0.470 (11.9) 0.430 (10.9) 0.21 (5.3) 0.20 (5.1) MECHANICAL DATA : 0.042 (1.06) 0.038 (0.96) * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency * Weight : 15.95 grams 1.2 (30.5) MIN. 0.310 (7.87) 0.280(7.11) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage ABR ABR ABR ABR ABR ABR ABR UNIT 3500W 3501W 3502W 3504W 3506W 3508W 3510W 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V Minimum Avalanche Breakdown Voltage at 100 µA VBO(min.) 100 150 250 450 700 900 1100 V Maximum Avalanche Breakdown Voltage at 100 µA VBO(max.) 550 600 700 900 1150 1350 1550 V Maximum Average Forward Current Tc = 50°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing at ( t < 8.3 ms. ) Maximum Forward Voltage per Diode at IF = 17.5 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance Ta = 25 °C Ta = 100 °C (Note 1) Operating Junction Temperature Range Storage Temperature Range IF(AV) 35 A IFSM 400 A It VF 2 660 A2S 1.1 V IR 10 µA IR(H) 200 µA RθJC 1.5 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Note : 1 ) Thermal resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" ( 19 x 9 x 11.8 cm )Al. plate. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( ABR3500W - ABR3510W ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 400 HEAT-SINK MOUNTING, Tc 7.5"x3.5"x4.6" THK (19cm x 9cm x 11.8cm) Al. Finned Plate 40 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 50 30 20 10 0 0 25 50 75 100 125 150 240 160 8ms SINGLE HALF SINE WAVE JEDEC METHOD 80 0 175 TJ = 55 °C 320 1 CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES 100 10 Pulse Width = 300 µs 1 % Duty Cycle 1.0 1.0 TJ = 25 °C 0.1 TJ = 25 °C 0.01 0 0.1 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005