VSKDS409/150 Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • • • • • • 175 °C TJ operation Low forward voltage drop High frequency operation Low thermal resistance Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate • High surge capability • Easy mounting on heatsink ADD-A-PAK PRODUCT SUMMARY IF(AV) 200 A ELECTRICAL DESCRIPTION MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. The VSKDS409/150 Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 200 Apk, TJ = 125 °C TJ Range VALUES UNITS 200 A 150 V 20 000 A 0.85 V - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VSKDS409/150 UNITS 150 V VR Maximum static peak reverse voltage VRRM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL TEST CONDITIONS VALUES IF(AV) 50 % duty cycle at TC = 105 °C, rectangular waveform 200 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied 20 000 UNITS A Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.8 A, L = 10 mH 15 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1 A Maximum dynamic peak reverse voltage VAV TJ = 25 °C, IAS = 1.8 A, L = 10 mH 170 V Document Number: 94649 Revision: 13-Jan-11 10 ms sine or 6 ms rect. pulse For technical questions, contact: [email protected] 2300 www.vishay.com 1 VSKDS409/150 Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 200 A Maximum forward voltage drop VFM 400 A 200 A 400 A TJ = 25 °C VALUES 1.03 TJ = 25 °C 1.33 0.85 TJ = 125 °C 6 VR = Rated VR IRM Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Typical series inductance LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Maximum RMS insulation voltage VINS V 1.13 Maximum reverse leakage current TJ = 125 °C UNITS 85 Rated VR 50 Hz mA 6000 pF 5.0 nH 10 000 V/μs 3000 (1 min) 3600 (1 s) V VALUES UNITS - 55 to 175 °C THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per leg RthJC Typical thermal resistance, case to heatsink per module RthCS DC operation 0.32 °C/W 0.1 Approximate weight to heatsink Mounting torque ± 10 % busbar Case style www.vishay.com 2 A mounting compound is recommended and the torque should be rechecked after a period of 3 h to allow for the spread of the compound. JEDEC For technical questions, contact: [email protected] 75 g 2.7 oz. 4 Nm 3 TO-240AA compatible Document Number: 94649 Revision: 13-Jan-11 VSKDS409/150 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) ADD-A-PAK Generation VII Vishay Semiconductors Power Modules Schottky Rectifier, 200 A 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 0.0 100 TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.5 1.0 1.5 2.0 0 VFM - Forward Voltage Drop (V) 94649_01 TJ = 175 °C 25 75 100 125 150 VR - Reverse Voltage (V) 94649_02 Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) 50 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 94649_03 20 40 60 80 100 120 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.1 0.01 0.001 0.0001 94649_04 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) Document Number: 94649 Revision: 13-Jan-11 For technical questions, contact: [email protected] www.vishay.com 3 VSKDS409/150 ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A 180 300 160 140 DC 120 100 80 60 Square wave (D = 0.50) 80 % rated VR applied 40 20 250 Average Power Loss (W) Allowable Case Temperature (°C) Vishay Semiconductors 200 150 RMS limit 100 DC 50 See note (1) 0 0 0 94649_05 180° 120° 90° 60° 30° 100 200 300 400 0 500 IF(AV) - Average Forward Current (A) 94649_06 IFSM - Non-Repetitive Surge Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) 50 100 150 200 250 300 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics (Per Leg) 100 000 At any rated load condition and with rated VRRM applied following surge 10 000 1000 10 94649_07 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94649 Revision: 13-Jan-11 VSKDS409/150 ADD-A-PAK Generation VII Vishay Semiconductors Power Modules Schottky Rectifier, 200 A ORDERING INFORMATION TABLE Device code VS KD S 40 9 1 2 3 4 5 / 150 6 1 - Vishay Semiconductors product 2 - Circuit configuration: 3 - S = Schottky diode 4 - Average current rating (40 = 400 A) (1) 5 - Product silicon identification 6 - Voltage rating (150 = 150 V) KD = ADD-A-PAK - 2 diodes in series Note (1) For KD configuration average current rating per module is 200 A CIRCUIT CONFIGURATION (1) ~ (2) + (3) - LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94649 Revision: 13-Jan-11 www.vishay.com/doc?95369 For technical questions, contact: [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Diode DIMENSIONS in millimeters (inches) 29 ± 0.5 (1 ± 0.020) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 18 (0.7) REF. 24 ± 0.5 (1 ± 0.020) 6.7 ± 0.3 (0.26 ± 0.012) Viti M5 x 0.8 Screws M5 x 0.8 Document Number: 95369 Revision: 11-Nov-08 7 6 4 5 3 2 1 6.3 ± 0.2 (0.248 ± 0.008) 22.6 ± 0.2 (0.89 ± 0.008) 80 ± 0.3 (3.15 ± 0.012) 15 ± 0.5 (0.59 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030) For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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