VS-MBRB1635PbF, VS-MBRB1645PbF Vishay Semiconductors Schottky Rectifier, 16 A FEATURES • • • • Base cathode 2 • 3 Anode 1 D2PAK N/C • • • • 150 °C TJ operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC AEC-Q101 qualified PRODUCT SUMMARY DESCRIPTION IF(AV) 16 A VR 35 V/45 V IRM 40 mA at 125 °C This VS-MBRB16... Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS 16 A Rectangular waveform VRRM IFSM tp = 5 μs sine VF 16 Apk, TJ = 125 °C TJ 35/45 V 1800 A 0.57 V - 65 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-MBRB1635PbF VS-MBRB1645PbF UNITS 35 45 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) TEST CONDITIONS TC = 134 °C, rated VR 5 μs sine or 3 μs rect. pulse Non-repetitive peak surge current IFSM VALUES UNITS 16 Following any rated load condition and with rated VRRM applied 1800 Surge applied at rated load condition halfwave single phase 60 Hz 150 A Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH 24 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 3.6 A Document Number: 94304 Revision: 23-Jun-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 VS-MBRB1635PbF, VS-MBRB1645PbF Vishay Semiconductors Schottky Rectifier, 16 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM (1) Maximum instantaneous reverse current IRM (1) TEST CONDITIONS 16 A TJ = 25 °C TJ = 25 °C 0.63 TJ = 125 °C 0.57 Rated DC voltage TJ = 125 °C VALUES 0.2 40 UNITS V mA Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1400 pF Typical series inductance LS Measured lead from top of terminal to mounting plane 8.0 nH 10 000 V/μs VALUES UNITS Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ - 65 to 150 Maximum storage temperature range TStg - 65 to 175 Maximum thermal resistance, junction to case RthJC DC operation 1.50 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque Marking device www.vishay.com 2 °C Case style D2PAK For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] MBRB1645 Document Number: 94304 Revision: 23-Jun-10 VS-MBRB1635PbF, VS-MBRB1645PbF Schottky Rectifier, 16 A 100 IR - Reverse Current (mA) 100 IF - Instantaneous Forward Current (A) Vishay Semiconductors 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 150 °C 10 TJ = 125 °C 1.0 TJ = 100 °C TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 10 20 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 t1 0.01 0.001 0.00001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94304 Revision: 23-Jun-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-MBRB1635PbF, VS-MBRB1645PbF Schottky Rectifier, 16 A Vishay Semiconductors 15 RMS limit 150 Average Power Loss (W) Allowable Case Temperature (°C) 155 145 DC 140 135 130 Square wave (D = 0.50) Rated VR applied 125 10 DC D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 5 See note (1) 0 120 0 5 10 15 20 0 25 5 10 15 20 25 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR applied www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94304 Revision: 23-Jun-10 VS-MBRB1635PbF, VS-MBRB1645PbF Schottky Rectifier, 16 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 B 16 45 3 4 5 1 - HPP product suffix 2 - Essential part number 3 - B = Surface mount 4 - Current rating (16 = 16 A) 5 - Voltage code = VRRM 6 - TRL PbF 6 7 35 = 35 V 45 = 45 V None = Tube (50 pieces) TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 7 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 SPICE model www.vishay.com/doc?95407 Document Number: 94304 Revision: 23-Jun-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1