VISHAY MBRB1635PBF

VS-MBRB1635PbF, VS-MBRB1645PbF
Vishay Semiconductors
Schottky Rectifier, 16 A
FEATURES
•
•
•
•
Base
cathode
2
•
3
Anode
1
D2PAK
N/C
•
•
•
•
150 °C TJ operation
High frequency operation
Low forward voltage drop
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
PRODUCT SUMMARY
DESCRIPTION
IF(AV)
16 A
VR
35 V/45 V
IRM
40 mA at 125 °C
This VS-MBRB16... Schottky rectifier has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VALUES
UNITS
16
A
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
16 Apk, TJ = 125 °C
TJ
35/45
V
1800
A
0.57
V
- 65 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
VS-MBRB1635PbF
VS-MBRB1645PbF
UNITS
35
45
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
TEST CONDITIONS
TC = 134 °C, rated VR
5 μs sine or 3 μs rect. pulse
Non-repetitive peak surge current
IFSM
VALUES
UNITS
16
Following any rated
load condition and with
rated VRRM applied
1800
Surge applied at rated load condition halfwave
single phase 60 Hz
150
A
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH
24
mJ
Repetitive avalanche current
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3.6
A
Document Number: 94304
Revision: 23-Jun-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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1
VS-MBRB1635PbF, VS-MBRB1645PbF
Vishay Semiconductors
Schottky Rectifier, 16 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum instantaneous
reverse current
IRM (1)
TEST CONDITIONS
16 A
TJ = 25 °C
TJ = 25 °C
0.63
TJ = 125 °C
0.57
Rated DC voltage
TJ = 125 °C
VALUES
0.2
40
UNITS
V
mA
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
1400
pF
Typical series inductance
LS
Measured lead from top of terminal to mounting plane
8.0
nH
10 000
V/μs
VALUES
UNITS
Maximum voltage rate of change
dV/dt
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
- 65 to 150
Maximum storage temperature range
TStg
- 65 to 175
Maximum thermal resistance,
junction to case
RthJC
DC operation
1.50
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
°C/W
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
Marking device
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2
°C
Case style D2PAK
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
MBRB1645
Document Number: 94304
Revision: 23-Jun-10
VS-MBRB1635PbF, VS-MBRB1645PbF
Schottky Rectifier, 16 A
100
IR - Reverse Current (mA)
100
IF - Instantaneous
Forward Current (A)
Vishay Semiconductors
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 150 °C
10
TJ = 125 °C
1.0
TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.0001
1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
5
10
15
20
25
30
35
40
45
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
t1
0.01
0.001
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.0001
0.001
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94304
Revision: 23-Jun-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
VS-MBRB1635PbF, VS-MBRB1645PbF
Schottky Rectifier, 16 A
Vishay Semiconductors
15
RMS limit
150
Average Power Loss (W)
Allowable Case Temperature (°C)
155
145
DC
140
135
130
Square wave (D = 0.50)
Rated VR applied
125
10
DC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
5
See note (1)
0
120
0
5
10
15
20
0
25
5
10
15
20
25
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR applied
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94304
Revision: 23-Jun-10
VS-MBRB1635PbF, VS-MBRB1645PbF
Schottky Rectifier, 16 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
2
B
16
45
3
4
5
1
-
HPP product suffix
2
-
Essential part number
3
-
B = Surface mount
4
-
Current rating (16 = 16 A)
5
-
Voltage code = VRRM
6
-
TRL PbF
6
7
35 = 35 V
45 = 45 V
None = Tube (50 pieces)
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
7
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
Part marking information
www.vishay.com/doc?95054
Packaging information
www.vishay.com/doc?95032
SPICE model
www.vishay.com/doc?95407
Document Number: 94304
Revision: 23-Jun-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
H
2x e
Base
Metal
(4)
b1, b3
Gauge
plane
Seating
plane
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
4
e
0.100 BSC
H
14.61
15.88
0.575
0.625
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
L2
1.27
1.78
0.050
0.070
L3
2
2.54 BSC
L4
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
Document Number: 95046
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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