Document Number: MRF6P9220H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1600 mA, Pout = 47 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20 dB Drain Efficiency — 30% ACPR @ 750 kHz Offset — - 47.1 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Device Designed for Push - Pull Operation Only • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 880 MHz, 47 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 1 NI - 860C3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +68 Vdc Gate- Source Voltage VGS - 0.5, +12 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 700 4 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value(1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 220 W CW Case Temperature 76°C, 47 W CW RθJC 0.25 0.28 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF6P9220HR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 3B (Minimum) Machine Model (per EIA/JESD22 - A115) C (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (4) (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (4) (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 350 μAdc) VGS(th) 1 2.2 3 Vdc Gate Quiescent Voltage (3) (VDS = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain- Source On - Voltage (1) (VGS = 10 Vdc, ID = 2.4 Adc) VDS(on) 0.1 0.22 0.3 Vdc Forward Transconductance (1) (VDS = 10 Vdc, ID = 2.4 Adc) gfs — 7.4 — S Crss — 2.1 — pF Characteristic Off Characteristics (1) On Characteristics Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 47 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. 2. 3. 4. Gps 18.5 20 23 dB ηD 28.5 30 — % ACPR — - 47.1 - 45 dBc IRL — - 14 -9 dB Each side of device measured separately. Part internally matched both on input and output. Measurement made with device in push - pull configuration. Drains are tied together internally as this is a total device value. MRF6P9220HR3 2 RF Device Data Freescale Semiconductor R1 VBIAS + B1 C23 + R3 C1 C2 C3 Z19 COAX1 Z2 RF INPUT Z8 Z12 Z14 Z16 C14 C6 Z5 DUT C5 Z7 R2 RF Z18 OUTPUT C11 C10 Z3 C17 C18 COAX3 Z4 C4 Z1 C16 C15 Z10 Z6 VSUPPLY + C12 Z9 Z13 Z15 Z17 C13 B2 COAX2 VBIAS Z20 Z11 COAX4 + C9 C7 C24 Z1, Z18 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 0.401″ x 0.081″ Microstrip 0.563″ x 0.081″ Microstrip 0.416″ x 0.727″ Microstrip 0.058″ x 1.01″ Microstrip 0.191″ x 0.507″ Microstrip Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z19, Z20 PCB C19 VSUPPLY + + C8 C20 C21 C22 1.054″ x 0.150″ Microstrip 0.225″ x 0.507″ Microstrip 0.440″ x 0.335″ Microstrip 0.123″ x 0.140″ Microstrip 0.165″ x 0.339″ Microstrip GX - 0300, 0.030″, εr = 2.55 Figure 1. MRF6P9220HR3 Test Circuit Schematic Table 5. MRF6P9220HR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Short 2743019447 Fair- Rite C1, C9 1.0 μF, 50 V Tantalum Chip Capacitors T491C105K050AS Kemet C2, C7, C17, C21 0.1 μF Chip Capacitors CDR33BX104AKWS Kemet C3, C8, C16, C20 1000 pF 100B Chip Capacitors 100B102JP50X ATC C4, C5, C13, C14 100 pF 100B Chip Capacitors 100B101JP500X ATC C6, C12 8.2 pF 600B Chip Capacitors 600B8R2BT250XT ATC C10 9.1 pF 600B Chip Capacitor 600B9R1BT250XT ATC C11 1.8 pF 600B Chip Capacitor 600B1R8BT250XT ATC C15, C19 47 μF, 50 V Electrolytic Capacitors MVK50VC47RM8X10TP Nippon C18, C22 470 μF, 63 V Electrolytic Capacitors SME63V471M12X25LL United Chemi - Con C23, C24 22 pF 600B Chip Capacitors 600B220FT250XT ATC Coax1, 2, 3, 4 50 Ω, Semi Rigid Coax, 2.40″ Long UT - 141A- TP Micro - Coax R1, R2 10 Ω, 1/8 W Chip Resistors (1206) R3 1.0 kΩ, 1/8 W Chip Resistor (1206) MRF6P9220HR3 RF Device Data Freescale Semiconductor 3 C15 C1 VGG B1 C2 R1 VDD C23 C3 R3 C18 C16 COAX3 MRF6P9220, Rev. 1 COAX1 C6 C5 CUT OUT AREA C4 C14 C11 C10 C12 C13 COAX4 COAX2 C20 VGG C9 C7 C17 B2 C8 VDD C24 R2 C21 C19 C22 Figure 2. MRF6P9220HR3 Test Circuit Component Layout MRF6P9220HR3 4 RF Device Data Freescale Semiconductor 31 ηD 20.7 30 29 28 Gps 27 19.8 19.5 ACPR IRL 18.9 18.6 18.3 −45 VDD = 28 Vdc, Pout = 47 W (Avg.) IDQ = 1600 mA, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 19.2 −50 −55 −60 ALT1 −65 18 850 860 870 880 890 −70 910 900 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 20.4 20.1 −7 −9 −11 −13 −15 −17 IRL, INPUT RETURN LOSS (dB) 21 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) 42 ηD V = 28 Vdc, Pout = 94 W (Avg.) 19.6 DD IDQ = 1600 mA, N−CDMA IS−95 19.4 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 19.2 19 41 40 39 Gps 38 −35 ACPR 18.8 −40 18.6 −45 IRL 18.4 −50 ALT1 18.2 −55 18 850 860 870 880 890 −60 910 900 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 19.8 −7 −9 −11 −13 −15 −17 IRL, INPUT RETURN LOSS (dB) 20 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 47 Watts Avg. f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 94 Watts Avg. 20.5 −10 Gps, POWER GAIN (dB) 20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2400 mA 2000 mA 1600 mA 19.5 19 1200 mA 18.5 800 mA 18 VDD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz Two−Tone Measurements, 100 kHz Tone Spacing 17.5 17 VDD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz Two−Tone Measurements, 100 kHz Tone Spacing −20 −30 IDQ = 800 mA −40 1200 mA 2400 mA 2000 mA −50 1600 mA −60 3 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 500 5 10 100 500 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6P9220HR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS −20 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −10 VDD = 28 Vdc, IDQ = 1600 mA, f1 = 879.95 MHz f2 = 880.05 MHz, Two−Tone Measurements −20 −30 −40 −50 3rd Order −60 5th Order −70 7th Order −80 −90 7 100 10 −25 VDD = 28 Vdc, Pout = 220 W (PEP) IDQ = 1600 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −30 −35 3rd Order −40 5th Order −45 −50 7th Order −55 −60 1 0.1 500 10 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing P6dB = 54.95 dBm (312.77 W) 61 Pout, OUTPUT POWER (dBm) 50 Ideal P3dB = 54.60 dBm (288.76 W) 59 57 P1dB = 54.05 dBm (255.09 W) 55 Actual 53 VDD = 28 Vdc, IDQ = 1600 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 880 MHz 51 49 29 31 33 35 37 39 41 Pin, INPUT POWER (dBm) 50 −30 VDD = 28 Vdc, IDQ = 1600 mA f = 880 MHz, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 40 25_C −30_C −35 25_C ηD 85_C 30 TC = −30_C −40 Gps 20 −45 25_C 85_C ACPR 10 −50 0 1 10 100 −55 300 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulse CW Output Power versus Input Power Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power MRF6P9220HR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 21 72 TC = −30_C 64 Gps 25_C 20 56 85_C 19.5 48 25_C 40 19 85_C 18.5 32 ηD 24 18 VDD = 28 Vdc IDQ = 1600 mA f = 880 MHz 17.5 17 10 7 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 20.5 −30_C 16 8 500 100 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power 20.5 IDQ = 1600 mA f = 880 MHz Gps, POWER GAIN (dB) 19.5 18.5 17.5 16.5 24 V 28 V 20 V 16 V 32 V 15.5 VDD = 12 V 14.5 0 50 100 150 200 250 300 350 400 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power MTTF FACTOR (HOURS x AMPS2) 1010 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature MRF6P9220HR3 RF Device Data Freescale Semiconductor 7 N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. ............ . . . .. .. .. .. .. .. . .. .. .. . . −ALT1 in 30 kHz +ALT1 in 30 kHz .. . . Integrated BW Integrated BW .... . ................... ......... ..... ........... ......... . ............. ...... . . .. . . . . . . . .............. ................. ........ .......... ... ...... ........ ...... . . . .......... . . . . . . . . . ......... ............. . . . . .. . . . . .. . . . . .. .... . −ACPR in 30 kHz +ACPR in 30 kHz ................. ......... .. ............ . . ........... ................ ... . . . . . . Integrated BW Integrated BW .. ..... ............. ........ ...... .......... ........... −100 PEAK−TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRF6P9220HR3 8 RF Device Data Freescale Semiconductor f = 850 MHz f = 910 MHz Zload Zo = 10 Ω f = 850 MHz f = 910 MHz Zsource VDD = 28 Vdc, IDQ = 1600 mA, Pout = 47 W Avg. f MHz Zsource Ω Zload Ω 850 3.50 - j7.10 6.04 - j0.49 865 3.59 - j7.07 6.83 - j1.14 880 3.03 - j6.98 7.41 - j1.19 895 2.42 - j6.20 7.60 - j0.98 910 2.26 - j5.39 8.06 - j0.45 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 16. Series Equivalent Source and Load Impedance MRF6P9220HR3 RF Device Data Freescale Semiconductor 9 NOTES MRF6P9220HR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 4 G ccc R T A M B M Q bbb 2X L M J T A M M B M (LID) 2 1 B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. (FLANGE) 5 4X S (INSULATOR) bbb M T A K 3 4X M B M 4 B D bbb M ccc T A M M B T A M M B M F N (LID) E M H bbb A C (INSULATOR) M T A M B M A T SEATING PLANE DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF DRAIN DRAIN GATE GATE SOURCE CASE 375G - 04 ISSUE G NI - 860C3 MRF6P9220HR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6P9220HR3 Document Number: MRF6P9220H Rev. 2, 5/2006 12 RF Device Data Freescale Semiconductor