Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. N - CDMA Application • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20.2 dB Drain Efficiency — 31% ACPR @ 750 kHz Offset = - 45.7 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 60 Watts Avg., Full Frequency Band (865 - 960 MHz or 920 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 40% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.8% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 125 Watts, Full Frequency Band (920 - 960 MHz) Power Gain — 19 dB Drain Efficiency — 62% Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRFE6S9125NR1 MRFE6S9125NBR1 880 MHz, 27 W AVG., 28 V SINGLE N - CDMA, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S9125NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +66 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Maximum Operation Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 125 W CW Case Temperature 76°C, 27 W CW RθJC 0.44 0.45 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MRFE6S9125NR1 MRFE6S9125NBR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 10 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 1 2.1 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test) VGS(Q) 2 2.86 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.74 Adc) VDS(on) 0.05 0.24 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.9 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 64 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 350 — pF Off Characteristics On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 19 20.2 24 dB Drain Efficiency ηD 29 31 — % ACPR — - 45.7 - 44 dBc IRL — - 18 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally input matched. (continued) MRFE6S9125NR1 MRFE6S9125NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 60 W Avg., 920 - 960 MHz, EDGE Modulation Power Gain Gps — 20 — dB Drain Efficiency ηD — 40 — % Error Vector Magnitude EVM — 1.8 — % rms Spectral Regrowth at 400 kHz Offset SR1 — - 63 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 78 — dBc Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 125 W, 920 - 960 MHz Power Gain Gps — 19 — dB Drain Efficiency ηD — 62 — % Input Return Loss IRL — - 12 — dB P1dB — 125 — W Pout @ 1 dB Compression Point, CW (f = 880 MHz) Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, 865 - 900 MHz Bandwidth VBW Video Bandwidth @ 125 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) — 10 — ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) MHz Gain Flatness in 35 MHz Bandwidth @ Pout = 27 W Avg. GF — 0.93 — dB Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.011 — dB/°C ΔP1dB — 0.205 — dBm/°C Output Power Variation over Temperature ( - 30°C to +85°C) MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 3 R1 VBIAS + C10 RF INPUT C9 + + C8 C7 C18 R2 C6 Z2 Z3 Z4 Z5 + + C20 C21 C22 L2 L1 Z1 C19 Z6 Z9 C4 Z7 Z10 Z11 C11 C12 Z12 Z13 Z14 Z15 Z16 C13 C14 C15 C16 Z8 C1 VSUPPLY + C23 RF Z17 OUTPUT C17 DUT C3 C2 Z1, Z17 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.200″ 1.060″ 0.382″ 0.108″ 0.200″ 0.028″ 0.236″ 0.050″ 0.238″ x 0.080″ x 0.080″ x 0.220″ x 0.220″ x 0.420″ x 0.620″ x 0.620″ x 0.620″ x 0.620″ C5 Microstrip Microstrip Microstrip Microstrip x 0.620″ Taper Microstrip Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.057″ x 0.620″ Microstrip 0.119″ x 0.620″ Microstrip 0.450″ x 0.220″ Microstrip 0.061″ x 0.220″ Microstrip 0.078″ x 0.220″ Microstrip 0.692″ x 0.080″ Microstrip 0.368″ x 0.080″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRFE6S9125NR1(NBR1) Test Circuit Schematic Table 6. MRFE6S9125NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 20 pF Chip Capacitor ATC100B200FT500XT ATC C2 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC C3, C15 0.8 - 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C4, C5 11 pF Chip Capacitors ATC100B110FT500XT ATC C6, C18, C19 0.56 μF, 50 V Chip Capacitors C1825C564J5RAC Kemet C7, C8 47 μF, 16 V Tantalum Capacitors T491B476K016AT Kemet C9, C23 47 pF Chip Capacitors ATC700B470FT500XT ATC C10 100 μF, 50 V Electrolytic Capacitor MCHT101M1HB - 1017 - RH Multicomp C11, C12 12 pF Chip Capacitors ATC100B120FT250XT ATC C13, C14 5.1 pF Chip Capacitors ATC100B5R1BT250XT ATC C16 0.3 pF Chip Capacitor ATC700B0R3BT500XT ATC C17 39 pF Chip Capacitor ATC700B390FT500XT ATC C20, C21 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet C22 470 μF, 63 V Electrolytic Capacitor EKME630ELL471MK25S Multicomp L1 7.15 nH Inductor 1606 - 7J CoilCraft L2 8.0 nH Inductor A03T CoilCraft R1 15 Ω, 1/3 W Chip Resistor CRCW121015R0FKEA Vishay R2 560 kΩ, 1/4 W Resistor CRCW12065600FKEA Vishay MRFE6S9125NR1 MRFE6S9125NBR1 4 RF Device Data Freescale Semiconductor C20 C21 C8 C7 C22 C9 VGG C10 C6 R2 C4 R1 VDD C19 C23 C18 C11 C14 C1 C17 C2 C5 C3 CUT OUT AREA L2 L1 C13 C15 C16 C12 900 MHz TO272 WB Rev. 0 Figure 2. MRFE6S9125NR1(NBR1) Test Circuit Component Layout MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 5 ηD 30 VDD = 28 Vdc, Pout = 27 W (Avg.) IDQ = 950 mA, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 19 Gps 18 20 −30 IRL 17 −40 ACPR −50 16 15 ALT1 −60 14 820 840 860 880 900 920 940 960 −70 980 0 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 20 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) 40 21 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Gps 50 ηD 18 VDD = 28 Vdc, Pout = 62.5 W (Avg.) IDQ = 950 mA, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 17 40 30 IRL 16 −30 ACPR −40 15 14 −50 ALT1 13 820 840 860 880 900 920 940 960 −60 980 0 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 19 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) 60 20 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg. f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 62.5 Watts Avg. 22 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 1187 mA 21 Gps, POWER GAIN (dB) −10 IDQ = 1475 mA 950 mA 20 712 mA 19 475 mA 18 17 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements 16 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements −20 −30 IDQ = 475 mA 712 mA −40 1425 mA −50 1187 mA 950 mA −60 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 300 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRFE6S9125NR1 MRFE6S9125NBR1 6 RF Device Data Freescale Semiconductor 0 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS VDD = 28 Vdc, IDQ = 950 mA f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements −20 −40 3rd Order −60 5th Order −80 7th Order −100 10 1 100 −10 VDD = 28 Vdc, Pout = 125 W (PEP) IDQ = 950 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −20 IM3−U −30 IM3−L IM5−U −40 IM5−L −50 IM7−U IM7−L −60 1 400 10 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 60 Pout, OUTPUT POWER (dBm) Ideal P6dB = 53.39 dBm (218.27 W) 59 80 58 P3dB = 52.83 dBm (191.87 W) 57 56 55 P1dB = 51.92 dBm (155.6 W) 54 53 Actual 52 VDD = 28 Vdc, IDQ = 950 mA, Pulsed CW 12 μsec(on), 1% Duty Cycle, f = 880 MHz 51 50 29 30 31 32 33 34 35 36 37 38 39 Pin, INPUT POWER (dBm) 70 VDD = 28 Vdc, IDQ = 950 mA f = 880 MHz, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 60 50 −10 TC = −30_C 25_C 85_C 25_C −30_C −20 −30 85_C 25_C −40 40 −30_C 30 85_C −50 ACPR 20 −30_C −60 Gps 85_C ηD 10 −70 ALT1 25_C 0 1 10 100 −80 200 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulsed CW Output Power versus Input Power Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 22 TC = −30_C −30_C 21 IDQ = 950 mA f = 880 MHz 25_C 19 85_C 50 40 18 17 30 ηD 16 20 VDD = 28 Vdc IDQ = 950 mA f = 880 MHz 15 10 19 18 32 V 17 28 V 10 VDD = 24 V 0 300 14 1 20 Gps, POWER GAIN (dB) 25_C 85_C 60 ηD, DRAIN EFFICIENCY (%) 70 20 Gps, POWER GAIN (dB) 21 80 Gps 100 16 0 40 80 120 160 200 240 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 12. Power Gain versus Output Power 280 MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 27 W Avg., and ηD = 31%. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MRFE6S9125NR1 MRFE6S9125NBR1 8 RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. . . . . ............ .. .. .. .. .. .. . .. .. .. . . −ALT1 in 30 kHz +ALT1 in 30 kHz .. . . Integrated BW Integrated BW ... . ............... ......... .......... ..... .......... . . ................ ...... ... .. . . . . . . . .............. ................. ......... ........... ... ...... ...... ......... .......... . . . . . . . . . ......... ...... . . . ....... −ACPR in 30 kHz +ACPR in 30 kHz .................. . . . . .. .... . . ............ ....... ............... . ........ . ................ ... . . . . . Integrated BW Integrated BW ........ ........... ...... .......... ...... ... ........... −100 PEAK−TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 9 f = 900 MHz Zload f = 860 MHz Zo = 5 Ω Zsource f = 900 MHz f = 860 MHz VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. f MHz Zsource Ω Zload Ω 860 0.62 - j2.13 1.48 - j0.14 865 0.64 - j2.31 1.56 - j0.09 870 0.62 - j2.45 1.66 - j0.02 875 0.59 - j2.43 1.73 + j0.04 880 0.57 - j2.42 1.74 + j0.11 885 0.54 - j2.36 1.68 + j0.19 890 0.57 - j2.18 1.61 + j0.25 895 0.58 - j1.94 1.52 + j0.33 900 0.59 - j1.86 1.48 + j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRFE6S9125NR1 MRFE6S9125NBR1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 11 MRFE6S9125NR1 MRFE6S9125NBR1 12 RF Device Data Freescale Semiconductor MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 13 MRFE6S9125NR1 MRFE6S9125NBR1 14 RF Device Data Freescale Semiconductor MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 15 MRFE6S9125NR1 MRFE6S9125NBR1 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Oct. 2007 Description • Initial Release of Data Sheet MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRFE6S9125NR1 MRFE6S9125NBR1 Document Number: MRFE6S9125N Rev. 0, 10/2007 18 RF Device Data Freescale Semiconductor