Freescale Semiconductor Technical Data Document Number: MRF9200L Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 26 Volts, IDQ = 2400 mA, Pout = 40 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 17.5 dB Drain Efficiency — 25% ACPR @ 750 kHz Offset — - 46.5 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 880 MHz, 40 W AVG., 26 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF9200LR3 CASE 465C - 02, STYLE 1 NI - 880S MRF9200LSR3 Table 1. Maximum Ratings Symbol Value Unit Drain- Source Voltage Rating VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 625 3.6 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 60°C, 200 W CW Case Temperature 80°C, 40 W CW RθJC 0.28 0.34 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF9200LR3 MRF9200LSR3 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) B (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) VGS(th) 1.5 2.7 3.5 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 2400 mAdc) VGS(Q) 3 3.7 4.5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 6.0 Adc) VDS(on) — 0.25 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6.7 Adc) gfs — 8.8 — S Crss — 2.5 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 2400 mA, Pout = 40 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps 16 17.5 — dB ηD 22 25 — % ACPR — - 46.5 - 45 dBc IRL — - 13 -9 dB 1. Part internally matched both on input and output. MRF9200LR3 MRF9200LSR3 2 RF Device Data Freescale Semiconductor R3 R2 VBIAS B2 + + + C34 C33 C32 C31 C30 C29 B1 DRAIN Z1 RF INPUT Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C7 Z11 Z10 C2 R1 C1 C4 C3 L1 C19 C6 C5 C20 C21 C22 DUT C8 + + + + + + C23 C24 C25 C26 C27 C28 VSUPPLY L2 C15 Z12 C9 Z13 Z14 Z15 C13 Z16 Z17 Z18 DRAIN C10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.015″ x 0.083″ Microstrip 0.048″ x 0.083″ Microstrip 0.352″ x 0.083″ Microstrip 0.086″ x 0.050″ Microstrip 0.367″ x 0.050″ Microstrip 0.417″ x 0.115″ Microstrip 0.068″ x 0.397″ Microstrip C11 C12 Z8 Z9 Z10 Z11 Z12 Z13 C14 C16 0.335″ x 0.397″ Microstrip 0.134″ x 0.825″ x 0.090″ Taper 0.209″ x 0.825″ Microstrip 0.148″ x 0.825″ Microstrip 0.148″ x 0.750″ Microstrip 0.435″ x 0.750″ Microstrip C17 Z14 Z15 Z16 Z17 Z18 PCB RF OUTPUT C18 0.197″ x 0.750″ x 0.111″ Taper 0.331″ x 0.115″ Microstrip 0.557″ x 0.830″ Microstrip 0.078″ x 0.830″ Microstrip 0.414″ x 0.750″ Microstrip Arlon, 0.030″, εr = 2.56 Figure 1. MRF9200LR3(SR3) Test Circuit Schematic MRF9200LR3 MRF9200LSR3 RF Device Data Freescale Semiconductor 3 C24 C26 C33 C34 C32 R2 R3 B2 B1 VGG C31 C30 C22 C21 C25 C27 C20 C28 C17 C13 C15 R1 C1 C7 C2 C3 L1 C4 C8 CUT OUT AREA C29 C5 VDD C23 C9 C11 L2 C19 C14 C10 C16 C18 C6 C12 MRF9200 Drain Rev. 3A MRF9200 Drain Rev. 3B Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF9200LR3(SR3) Test Circuit Component Layout Table 5. MRF9200LR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 RF Bead, Surface Mount (0603) 2506033007Y0 Fair- Rite B2 RF Bead, Surface Mount (0805) 2508051107Y0 Fair- Rite C1 2.2 pF Chip Capacitor (0603) GQM1885C2A2R2CB01B Murata C2, C19 47 pF Chip Capacitors (0805) GQM2195C1H470JB01B Murata C3 2.0 pF Chip Capacitor (0603) GQM1885C2A2R0BB01B Murata C4, C18 0.4- 2.5 pF Variable Capacitors 27283PC Gigatronics C5 8.2 pF Chip Capacitor (0603) GQM1885C1H8R2DB01B Murata C6, C12 0.8- 8.0 pF Variable Capacitors 27291SL Gigatronics C7, C8 12 pF Chip Capacitors (0603) GQM1885C1H120JB01B Murata C9, C10 10 pF Chip Capacitors (0805) GQM2195C2A100JB01B Murata C11 5.1 pF Chip Capacitor (0805) GQM2195C2A5R1DB01B Murata C13 3.3 pF Chip Capacitor (0805) GQM2195C2A3R3CB01B Murata C14, C17 1.5 pF Chip Capacitors (0805) GQM2195C2A1R5CB01B Murata C15, C16 22 pF Chip Capacitors (0805) GQM2195C1H220JB01B Murata C20 0.56 μF Chip Capacitor (1825) C1825C564J5RAC Kemet C21, C22, C31 2.2 μF Chip Capacitors (1825) C1825C225J5RAC Kemet C23 10 μF, 50 V Tantalum Chip Capacitor 522Z- 050/100MTRE Tecate C24, C25, C26, C27 22 μF, 35 V Tantalum Chip Capacitors T491X226K035AS Kemet C28 330 μF, 63 V Electrolytic Capacitor NACZF331M100V (18X22) Nippon C29 10 μF Chip Capacitor (1206) GRM31MF51A106ZA01B Murata C30 0.01 μF Chip Capacitor (1825) C1825C103J1RAC Kemet C32, C33 22 μF, 25 V Tantalum Chip Capacitors ECS - T1ED226R Panasonic TE series C34 47 μF, 16 V Tantalum Chip Capacitor T491D476K016AS Kemet L1 22 nH Chip Inductor (0805) L0805220JEW AVX L2 8 nH Inductor A03T- 5 CoilCraft R1 510 W, 1/10 W Chip Resistor (0805) Dale/Vishay R2, R3 11 W, 1/8 W Chip Resistors (1206) Dale/Vishay MRF9200LR3 MRF9200LSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 26 24 Gps, POWER GAIN (dB) 18.6 VDD = 26 Vdc, Pout = 40 W (Avg.), IDQ = 1800 mA N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 18.4 18.2 Gps 18 20 18 −45 17.8 −50 ACPR −55 17.6 IRL 17.4 17.2 22 −60 ALT1 17 840 −65 850 860 870 880 890 900 910 −70 920 −8 −10 −12 −14 −16 −18 f, FREQUENCY (MHz) IRL, INPUT RETURN LOSS (dB) ηD ACPR (dBc), ALT1 (dBc) 18.8 ηD, DRAIN EFFICIENCY (%) 19 18 38 17.8 36 34 ηD 32 Gps 17.2 −35 17 16.8 −40 ACPR −45 IRL −50 16.6 16.4 VDD = 26 Vdc, Pout = 85 W (Avg.), IDQ = 1800 mA N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 −60 16.2 16 840 −55 ALT1 850 860 870 880 890 900 910 −65 920 −10 −12 −14 −16 −18 −20 f, FREQUENCY (MHz) IRL, INPUT RETURN LOSS (dB) 17.4 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 17.6 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 40 Watts Avg. Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 85 Watts Avg. 19 IDQ = 3000 mA Gps, POWER GAIN (dB) 18.5 18 2400 mA 17.5 1800 mA 17 16.5 VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements 100 kHz Tone Spacing 16 1200 mA 15.5 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −25 −30 3000 mA 2400 mA −35 IDQ = 1200 mA −40 −45 −50 1800 mA VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements, 100 kHz Tone Spacing −55 −60 10 1 100 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF9200LR3 MRF9200LSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −20 VDD = 26 Vdc, IDQ = 1800 mA f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements −30 −40 3rd Order −50 −60 5th Order −70 7th Order −80 1 10 100 −10 VDD = 26 Vdc, Pout = 200 W (PEP), IDQ = 1800 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −20 3rd Order −30 −40 5th Order −50 7th Order −60 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 60 Ideal Pout, OUTPUT POWER (dBm) 58 P3dB = 54.25 dBm (266 W) 56 P1dB = 53.1 dBm (204.1 W) 54 Actual 52 VDD = 26 Vdc, IDQ = 1800 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 880 MHz 50 48 31 33 35 37 39 41 Pin, INPUT POWER (dBm) 50 0 VDD = 26 Vdc, IDQ = 1800 mA, f = 880 MHz N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 40 −20 −40 30 Gps ACPR 20 −60 ALT1 −80 10 ηD 0 1 10 −100 100 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulse CW Output Power versus Input Power Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF9200LR3 MRF9200LSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 60 Gps Gps, POWER GAIN (dB) 18 50 16 40 14 30 20 12 VDD = 26 Vdc IDQ = 1800 mA f = 880 MHz ηD 10 8 3 10 10 ηD, DRAIN EFFICIENCY (%) 20 0 350 100 Pout, OUTPUT POWER (WATTS) CW 20 60 Gps Gps, POWER GAIN (dB) 18 40 20 16 ηD 0 14 VDD = 26 Vdc, IDQ = 1800 mA f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements, 100 kHz Tone Spacing 12 10 −20 −40 IMD 8 1 10 −60 400 100 ηD, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) Figure 11. Power Gain and Drain Efficiency versus CW Output Power Pout, OUTPUT POWER (WATTS) PEP Figure 12. Power Gain, Efficiency and IMD versus Output Power 19 Gps, POWER GAIN (dB) 18 VDD = 28 V 17 26 V 20 V 16 V 16 24 V 12 V 15 IDQ = 1800 mA f = 880 MHz 14 0 50 100 150 200 250 Pout, OUTPUT POWER (WATTS) CW Figure 13. Power Gain versus Output Power MRF9200LR3 MRF9200LSR3 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS X AMPS2) 1011 1010 109 108 90 110 130 150 170 190 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 14. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. ............................................. ............. . . . . .. .. .. ... .. .. . .. .. .. .. −ALT1 in 30 kHz +ALT1 in 30 kHz .. .. Integrated BW Integrated BW .... . . . .. ... . . . . . ... . . . . ........... . . . .. ........ .................. .... .... . . .... . . . . . ..... .. ............ ................. ........ .......... . ... ....... ........... ......... . . ......... ....... . . .. . . . . .. . ................ . .... . .. . . . . . . . .. .... . . ............ −ACPR in 30 kHz +ACPR in 30 kHz . . . . . ... .. . ......... . ........... . . . . ............... . ... Integrated BW Integrated BW .. ...... ..... ........... ................. ........ ...... ... −100 PEAK−TO−AVERAGE (dB) Figure 15. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 16. Single - Carrier N - CDMA Spectrum MRF9200LR3 MRF9200LSR3 8 RF Device Data Freescale Semiconductor Zo = 2 Ω f = 895 MHz f = 895 MHz Zload Zsource f = 865 MHz f = 865 MHz VDD = 26 Vdc, IDQ = 2400 mA, Pout = 40 W Avg. f MHz Zsource Ω Zload Ω 865 0.98 - j1.41 1.30 - j1.66 880 0.96 - j1.23 1.36 - j1.58 895 0.94 - j1.06 1.40 - j1.50 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 17. Series Equivalent Source and Load Impedance MRF9200LR3 MRF9200LSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF9200LR3 MRF9200LSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 2X 1 Q bbb M T A B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED M B (FLANGE) 3 K 2 bbb bbb M ccc M M D T A B M M (INSULATOR) M T A M B M T A M B M N R ccc M T A M B S (LID) aaa M T A M B (LID) M (INSULATOR) M H C E T A (FLANGE) SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 B (FLANGE) 2 bbb bbb M M D T A T A M M B B M M (INSULATOR) M T A M B R ccc M N ccc MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF CASE 465B - 03 ISSUE E NI - 880 MRF9200LR3 B K INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F A DIM A B C D E F G H K M N Q R S aaa bbb ccc M T A M aaa M B S (LID) M T A M B (LID) M (INSULATOR) M H DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE C F E T A A (FLANGE) SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF9200LSR3 MRF9200LR3 MRF9200LSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF9200LR3 MRF9200LSR3 Document Number: MRF9200L Rev. 3, 5/2006 12 RF Device Data Freescale Semiconductor