Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 4, 12/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 14 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S21060NR1 MRF6S21060NBR1 2110 - 2170 MHz, 14 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S21060NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S21060NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 79°C, 60 W CW Case Temperature 76°C, 14 W CW RθJC 0.89 1.04 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S21060NBR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 1.5 2.2 2.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 610 mAdc) VGS(Q) 2 2.8 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) — 0.3 — Vdc Crss — 1.5 — pF Off Characteristics On Characteristics (DC) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 13.5 15.5 16.5 dB Drain Efficiency ηD 24.5 26 — % Intermodulation Distortion IM3 — - 37 - 35 dBc ACPR — - 40 - 38 dBc IRL — - 14 - 10 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S21060NR1 MRF6S21060NBR1 2 RF Device Data Freescale Semiconductor R1 VBIAS VSUPPLY R2 C6 C1 C2 C3 Z6 C4 C5 Z15 RF INPUT R3 Z1 Z2 Z3 Z4 Z5 Z8 Z9 Z10 Z11 Z12 Z7 Z13 Z14 RF OUTPUT C8 Z16 C7 DUT VSUPPLY C9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.250″ x 0.080″ Microstrip 0.860″ x 0.080″ Microstrip 0.300″ x 0.405″ Microstrip 0.350″ x 0.080″ Microstrip 0.350″ x 0.755″ Microstrip 0.680″ x 0.080″ Microstrip 0.115″ x 0.755″ Microstrip 0.115″ x 1.000″ Microstrip 0.240″ x 1.000″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB C10 C11 0.270″ x 0.300″ Microstrip 0.230″ x 0.080″ Microstrip 0.310″ x 0.300″ Microstrip 0.830″ x 0.080″ Microstrip 0.200″ x 0.080″ Microstrip 1.000″ x 0.080″ Microstrip 1.100″ x 0.070″ Microstrip Arlon AD250, 0.030″, εr = 2.5 Figure 1. MRF6S21060NR1(NBR1) Test Circuit Schematic Table 6. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 100 nF Chip Capacitor CDR33BX104AKYS Kemet C2, C7 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC C3, C8, C9 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C4, C5, C6, C10, C11 10 μF, 35 V Chip Capacitors GRM55DR61H106KA88L Murata R1 1 k, 1/4 W Chip Resistor CRCW12061000FKTA Vishay R2 10 k, 1/4 W Chip Resistor CRCW12061001FKTA Vishay R3 10 1/4 W Chip Resistor CRCW120610R0FKTA Vishay MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 3 R1 C4 R2 C6 C1 C2 C5 C3 CUT OUT AREA R3 C7 C8 C9 C10 C11 MRF6S21060N Rev. 3 Figure 2. MRF6S21060NR1(NBR1) Test Circuit Component Layout MRF6S21060NR1 MRF6S21060NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 28 26 VDD = 28 Vdc, Pout = 14 W (Avg.) IDQ = 610 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 15.4 15.2 15 27 25 Gps 24 −36 IM3 14.8 −38 14.6 −40 14.4 −42 IRL 14.2 14 2060 2080 2100 IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) 15.6 2120 ACPR 2140 2160 −44 2180 −46 2220 2200 −5 −10 −15 −20 −25 IRL, INPUT RETURN LOSS (dB) ηD 15.8 ηD, DRAIN EFFICIENCY (%) 16 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 14 Watts Avg. ηD Gps, POWER GAIN (dB) 15.2 38 37 VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 610 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 15 14.8 36 −26 14.6 −28 IM3 14.4 IRL −30 14.2 ACPR −32 14 2060 2080 2100 2120 2140 2160 2180 2200 −6 −34 2220 −9 −12 −15 −18 −21 −24 IRL, INPUT RETURN LOSS (dB) 15.4 ηD, DRAIN EFFICIENCY (%) 39 Gps IM3 (dBc), ACPR (dBc) 15.6 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 28 Watts Avg. 17 −10 763 mA 16 Gps, POWER GAIN (dB) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 915 mA 610 mA 15 458 mA 14 305 mA 13 12 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two −Tone Measurements, 10 MHz Tone Spacing 11 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two −Tone Measurements, 10 MHz Tone Spacing −20 −30 IDQ = 305 mA 915 mA −40 −50 458 mA 763 mA 610 mA −60 1 10 100 200 1 10 100 200 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 5 −10 57 VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA Two −Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz −30 55 Pout, OUTPUT POWER (dBm) −20 3rd Order −40 5th Order 7th Order −50 Ideal P3dB = 49.986 dBm (99.68 W) 53 P1dB = 49.252 dBm (84.18 W) 51 Actual 49 47 VDD = 28 Vdc, IDQ = 610 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 45 −60 0.1 43 1 28 100 10 30 32 34 36 38 40 TWO −TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulse CW Output Power versus Input Power 60 50 40 0 VDD = 28 Vdc, IDQ = 610 mA f1 = 2135 MHz, f2 = 2145 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) TC = −30_C ηD 25_C 85_C IM3 −10 25_C −20 −30_C 30 −30 ACPR 20 Gps −40 −30_C 25_C −50 85_C 10 IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 0 −60 10 1 100 200 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 17 25_C 50 85_C 15 85_C 40 14 12 ηD VDD = 28 Vdc IDQ = 610 mA f = 2140 MHz 30 20 11 10 1 IDQ = 610 mA f = 2140 MHz 10 100 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power 200 15 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 25_C ηD, DRAIN EFFICIENCY (%) −30_C 60 16 13 16 70 Gps TC = −30_C 14 13 12 10 11 0 10 32 V 28 V 16 V 24 V 20 V VDD = 12 V 0 20 40 60 80 100 120 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain versus Output Power MRF6S21060NR1 MRF6S21060NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS x AMPS2) 109 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature W - CDMA TEST SIGNAL 100 +20 3.84 MHz Channel BW +30 0 −10 1 (dB) PROBABILITY (%) 10 0.1 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.01 −50 4 6 −70 −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −80 −25 −20 −60 0.0001 2 −30 −40 0.001 0 −20 8 10 PEAK −TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal −15 −10 −5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 7 Zo = 10 Ω f = 2110 MHz Zload f = 2110 MHz Zsource f = 2170 MHz f = 2170 MHz VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg. f MHz Zsource Ω Zload Ω 2110 7.59 - j8.39 3.31 - j5.35 2140 6.71 - j8.83 3.17 - j5.16 2170 5.84 - j8.62 3.06 - j4.92 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S21060NR1 MRF6S21060NBR1 8 RF Device Data Freescale Semiconductor TD - SCDMA CHARACTERIZATION R1 VBIAS VSUPPLY R2 C6 C1 C2 C3 Z9 C4 C5 Z17 RF INPUT R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z10 Z11 Z12 Z13 Z14 Z15 Z8 Z16 RF OUTPUT C8 Z18 C7 DUT VSUPPLY C9 Z1 Z2 Z3* Z4 Z5* Z6 Z7 Z8 Z9 Z10 0.250″ x 0.080″ Microstrip 0.129″ x 0.080″ Microstrip 0.565″ x 0.258″ Microstrip 0.160″ x 0.080″ Microstrip 0.300″ x 0.455″ Microstrip 0.350″ x 0.080″ Microstrip 0.350″ x 0.755″ Microstrip 0.115″ x 0.755″ Microstrip 0.680″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip Z11 Z12* Z13 Z14* Z15 Z16 Z17 Z18 PCB C10 C11 0.240″ x 1.000″ Microstrip 0.270″ x 0.360″ Microstrip 0.230″ x 0.080″ Microstrip 0.588″ x 0.290″ Microstrip 0.595″ x 0.080″ Microstrip 0.200″ x 0.080″ Microstrip 0.935″ x 0.080″ Microstrip 0.955″ x 0.080″ Microstrip Arlon AD250, 0.030″, εr = 2.5 * Copper foil tape soldered onto PCB Figure 16. MRF6S21060NR1(NBR1) Test Circuit Schematic — TD - SCDMA Table 7. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values — TD - SCDMA Part Description Part Number Manufacturer C1 100 nF Chip Capacitor CDR33BX104AKYS Kemet C2, C7 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC C3, C8, C9 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C4, C5, C6, C10, C11 10 μF, 35 V Chip Capacitors GRM55DR61H106KA88L Murata R1 1 k, 1/4 W Chip Resistor CRCW12061000FKTA Vishay R2 10 k, 1/4 W Chip Resistor CRCW12061001FKTA Vishay R3 10 1/4 W Chip Resistor CRCW120610R0FKTA Vishay MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 9 R1 C4 R2 C6 C1 C5 C3 C2 CUT OUT AREA R3 C7 C8 C9 C10 C11 MRF6S21060N Rev. 3 Figure 17. MRF6S21060NR1(NBR1) Test Circuit Component Layout — TD - SCDMA MRF6S21060NR1 MRF6S21060NBR1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 0 30 3−Carrier TD−SCDMA VDD = 28 V, IDQ = 555 mA f = 2017.5 MHz 25 ηD −20 20 Adj −U −30 Adj −L 15 10 −40 Alt−L −50 5 ηD, DRAIN EFFICIENCY (%) ALT/ACPR (dBc) −10 Alt−U −60 0 0 2 1 3 4 5 6 7 8 9 Pout, OUTPUT POWER (WATTS) AVG. Figure 18. 3 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power −18 25 ALT/ACPR (dBc) −26 20 ηD 15 −34 Adj −U Adj −L −42 10 Alt−L −50 5 ηD, DRAIN EFFICIENCY (%) 6−Carrier TD−SCDMA VDD = 28 V, IDQ = 560 mA f = 2017.5 MHz Alt−U −58 0.5 0 1.5 2.5 3.5 4.5 5.5 6.5 7.5 Pout, OUTPUT POWER (WATTS) AVG. Figure 19. 6 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power TD - SCDMA TEST SIGNAL −30 −30 1.28 MHz Channel BW −40 −50 −50 −60 −70 +ALT2 in 1.28 MHz BW +3.2 MHz Offset −ALT2 in 1.28 MHz BW −3.2 MHz Offset −80 −90 −100 −ALT2 in 1.28 MHz BW −3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset −100 −110 −120 (dBm) (dBm) −90 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz −60 −70 −80 1.28 MHz Channel BW −40 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz −110 +ALT1 in 1.28 MHz BW +1.6 MHz Offset −ALT1 in 1.28 MHz BW −1.6 MHz Offset −130 Center 2.0175 GHz 1.5 MHz Span 15 MHz f, FREQUENCY (MHz) Figure 20. 3 - Carrier TD - SCDMA Spectrum −120 −ALT1 in 1.28 MHz BW −1.6 MHz Offset −130 Center 2.0175 GHz +ALT1 in 1.28 MHz BW +1.6 MHz Offset 2.5 MHz Span 25 MHz f, FREQUENCY (MHz) Figure 21. 6 - Carrier TD - SCDMA Spectrum MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 11 Zo = 10 Ω Zload f = 1950 MHz f = 2070 MHz f = 2070 MHz f = 1950 MHz Zin VDD = 28 Vdc, IDQ = 560 mA Zin f MHz Zin W Zload W 1950 2.227 - j9.127 3.341 - j8.372 1960 2.168 - j8.942 3.239 - j8.218 1970 2.124 - j8.757 3.168 - j8.084 1980 2.073 - j8.606 3.083 - j7.966 1990 2.031 - j8.447 3.009 - j7.865 2000 1.987 - j8.306 2.929 - j7.743 2010 1.940 - j8.155 2.845 - j7.639 2020 1.911 - j8.000 2.775 - j7.529 2030 1.891 - j7.835 2.696 - j7.410 2040 1.856 - j7.711 2.615 - j7.309 2050 1.831 - j7.589 2.549 - j7.207 2060 1.808 - j7.461 2.479 - j7.086 2070 1.782 - j7.325 2.422 - j6.983 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Output Matching Network Device Under Test Z in Z load Figure 22. Series Equivalent Input and Load Impedance — TD - SCDMA MRF6S21060NR1 MRF6S21060NBR1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS E1 B A 2X E3 GATE LEAD DRAIN LEAD D D1 4X e 4X b1 aaa M C A 2X 2X D2 c1 E H DATUM PLANE F ZONE J A A1 2X A2 E2 NOTE 7 E5 E4 4 D3 3 ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW C SEATING PLANE PIN 5 NOTE 8 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S21060NR1 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 DRAIN DRAIN GATE GATE SOURCE MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 13 MRF6S21060NR1 MRF6S21060NBR1 14 RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 15 MRF6S21060NR1 MRF6S21060NBR1 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 4 Dec. 2006 Description • Added “TD - SCDMA” to data sheet description, p. 1 • Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 9 - 12 • Added Product Documentation and Revision History, p. 17 MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S21060NR1 MRF6S21060NBR1 Document Number: MRF6S21060N Rev. 4, 12/2006 18 RF Device Data Freescale Semiconductor