FREESCALE MRF7S19080HR3

Freescale Semiconductor
Technical Data
Document Number: MRF7S19080H
Rev. 0, 1/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF7S19080HR3
MRF7S19080HSR3
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for TD - SCDMA and PCN - PCS/cellular radio
applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
750 mA, Pout = 24 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 18 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 80 Watts CW
Peak Tuned Output Power
• Pout @ 1 dB Compression Point w 80 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1930 - 1990 MHz, 24 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465- 06, STYLE 1
NI - 780
MRF7S19080HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S19080HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 79 W CW
Case Temperature 79°C, 24 W CW
RθJC
0.60
0.69
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S19080HR3 MRF7S19080HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 174 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 750 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.8
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.74 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.64
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
297
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 24 W Avg., f = 1932.5 MHz and f =
1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
17
18
20
dB
Drain Efficiency
ηD
30
32
—
%
PAR
5.7
6.2
—
dB
ACPR
—
- 38
- 35
dBc
IRL
—
- 20
-9
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(continued)
MRF7S19080HR3 MRF7S19080HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, 1930 - 1990 MHz Bandwidth
Video Bandwidth @ 80 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
90
—
Gain Flatness in 60 MHz Bandwidth @ Pout = 24 W Avg.
GF
—
0.165
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 80 W CW
Φ
—
1.14
—
°
Delay
—
2.25
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 80 W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
—
22.3
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.009
—
dB/°C
ΔP1dB
—
0.017
—
dBm/°C
Average Group Delay @ Pout = 80 W CW, f = 1960 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MRF7S19080HR3 MRF7S19080HSR3
RF Device Data
Freescale Semiconductor
3
R2
VBIAS
VSUPPLY
R1
C2
C3
C4
C5
C6
C8
Z8
C9
C10
C11
+
+
C12
C13
Z7
RF
INPUT
Z3
Z1
Z2
Z9
Z5
Z4
Z6
C1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z10
Z12
Z11
Z13
RF
OUTPUT
C7
DUT
0.530″ x 0.084″ Microstrip
0.336″ x 0.084″ Microstrip
0.211″ x 0.180″ x 0.084″ Taper
0.704″ x 0.216″ Microstrip
0.220″ x 0.216″ x 0.084″ Taper
0.504″ x 0.800″ x 0.084″ Taper
0.265″ x 0.313″ x 0.332″ x 0.040″ Taper
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.306″ x 0.388″ x 0.090″ Taper
0.880″ x 0.201″ x 0.795″ Taper
0.415″ x 0.084″ Microstrip
0.191″ x 0.243″ x 0.084″ Taper
0.510″ x 0.084″ Microstrip
0.525″ x 0.084″ Microstrip
Arlon, GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF7S19080HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S19080HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C7
15 pF Chip Capacitors
ATC100B150JT500XT
ATC
C2, C11
13 pF Chip Capacitors
ATC100B130JT500XT
ATC
C3
10 μF Chip Capacitor
GRM31MF51A106ZA01B
TDK
C4
1000 pF Chip Capacitor
ATC100B102JT50XT
ATC
C5, C10
0.1 μF Chip Capacitors
C1206C104K5RAC
Kemet
C6
5.1 pF Chip Capacitor
ATC100B5R1CT500XT
ATC
C8
6.8 pF Chip Capacitor
ATC100B6R8CT500XT
ATC
C9
2.2 μF Chip Capacitor
C1825C225J5RAC
Kemet
C12
470 μF, 63 V Electrolytic Capacitor
MCR63V477M13X26
Multicomp
C13
100 μF, 50 V Electrolytic Capacitor
MCR50V107M8X11
Multicomp
R1
330 Ω, 1/4 W Chip Resistor
CRCW12063300FKTA
Vishay
R2
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKTA
Vishay
MRF7S19080HR3 MRF7S19080HSR3
4
RF Device Data
Freescale Semiconductor
C12
R2
R1
C13
C6
C8
C9
C2 C3 C4
C10
C5
C11
C7
CUT OUT AREA
C1
HV7
2.1 GHz
NI780
Rev. 1
Figure 2. MRF7S19080HR3(HSR3) Test Circuit Component Layout
MRF7S19080HR3 MRF7S19080HSR3
RF Device Data
Freescale Semiconductor
5
Gps, POWER GAIN (dB)
18
36
17
16
15
34
ηD
VDD = 28 Vdc, Pout = 24 W (Avg.)
IDQ = 750 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
32
14
IRL
13
30
−10
−0.8
−15
−1
12
−1.2
PARC
11
1880
1920
−25
−1.4
2040
2000
1960
−20
−30
IRL, INPUT RETURN LOSS (dB)
38
Gps
PARC (dB)
19
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Gps, POWER GAIN (dB)
18
48
17
46
VDD = 28 Vdc, Pout = 49 W (Avg.)
IDQ = 750 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
16
15
Gps
44
14
42
−10
−2.6
−15
IRL
13
12
−2.8
−3
PARC
11
1880
1920
1960
2000
−3.2
2080
2040
−20
−25
−30
IRL, INPUT RETURN LOSS (dB)
50
ηD
PARC (dB)
19
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 24 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 49 Watts Avg.
20
IDQ = 1125 mA
19
Gps, POWER GAIN (dB)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
937.5 mA
18
750 mA
17
562.5 mA
16
375 mA
15
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
14
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
−20
−30
IDQ = 375 mA
562.5 mA
−40
1125 mA
−50
937.5 mA
−60
750 mA
−70
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
200
1
10
100
200
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S19080HR3 MRF7S19080HSR3
6
RF Device Data
Freescale Semiconductor
−10
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 750 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
−20
−30
−40
−50
3rd Order
5th Order
−60
7th Order
−70
1
10
100
0
VDD = 28 Vdc, Pout = 80 W (PEP), IDQ = 750 mA
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−10
−20
IM3 −U
−30
IM3 −L
IM5 −U
−40
IM5 −L
IM7 −U
−50
IM7 −L
−60
1
400
10
100
Pout, OUTPUT POWER (WATTS) PEP
TWO −TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
1
60
Ideal
0
55
−1
50
−1 dB = 23 W
−2
45
−2 dB = 32.2 W
−3
40
−3 dB = 52.4 W
−4
Actual
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
35
VDD = 28 Vdc, IDQ = 750 mA
f = 1960 MHz, Input PAR = 7.5 dB
−5
30
10
20
30
40
50
60
Pout, OUTPUT POWER (WATTS)
20
−30
Uncorrected, Upper and Lower
−40
DPD Corrected
No Memory Correction
−50
−60
19
DPD Corrected, with Memory Correction
34
35
36
37
38
39
40
41
42
43
44
Pout, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Gps
25_C
55
TC = −30_C
85_C
18
44
25_C
85_C
17
33
16
15
−70
66
−30_C
VDD = 28 Vdc, IDQ = 750 mA, f = 1960 MHz
Single −Carrier W−CDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
14
0.1
22
VDD = 28 Vdc
IDQ = 750 mA
f = 1960 MHz
ηD
1
10
11
100
ηD, DRAIN EFFICIENCY (%)
−20
Gps, POWER GAIN (dB)
ACPR, UPPER AND LOWER RESULTS (dBc)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
0
300
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
MRF7S19080HR3 MRF7S19080HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
19
109
18
MTTF (HOURS)
Gps, POWER GAIN (dB)
IDQ = 750 mA
f = 1960 MHz
17
108
107
16
VDD = 24 V
28 V
32 V
106
15
0
50
150
100
90
110
Pout, OUTPUT POWER (WATTS) CW
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Power Gain versus Output Power
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 24 W Avg., and ηD = 32%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
Compressed Output
Signal @ 50 W Pout
0.1
Input Signal
−50
(dB)
PROBABILITY (%)
−30
0.01
−70
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
0.001
0.0001
0
2
4
6
−60
−80
−ACPR in 3.84 MHz
Integrated BW
−90
8
10
PEAK −TO−AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−ACPR in 3.84 MHz
Integrated BW
−100
−110
−9
−7.2 −5.4
−3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S19080HR3 MRF7S19080HSR3
8
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 2040 MHz
Zload
f = 1880 MHz
Zsource
f = 2040 MHz
f = 1880 MHz
VDD = 28 Vdc, IDQ = 750 mA, Pout = 24 W Avg.
f
MHz
Zsource
W
Zload
W
1880
1.47 - j7.3
2.10 - j5.4
1900
1.22 - j6.7
1.96 - j5.0
1920
1.43 - j6.7
2.06 - j4.9
1940
1.89 - j6.8
2.27 - j5.1
1960
2.10 - j7.1
2.45 - j5.1
1980
2.11 - j7.2
2.38 - j5.0
2000
1.60 - j6.9
2.08 - j4.9
2020
1.41 - j6.9
1.84 - j4.9
2040
1.43 - j6.5
1.89 - j4.6
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S19080HR3 MRF7S19080HSR3
RF Device Data
Freescale Semiconductor
9
TD - SCDMA CHARACTERIZATION
R2
VBIAS
VSUPPLY
R1
C2
C3
C4
C5
C6
C8
Z6
RF
INPUT
Z2
Z8
Z4
Z5
Z10
Z11
C12
C13
C11
Z12
Z7
C1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C10
+
Z9
Z3
Z1
C9
+
RF
Z15 OUTPUT
Z14
Z13
C7
DUT
0.490″
1.082″
0.131″
0.734″
0.308″
0.889″
0.092″
0.160″
x 0.084″ Microstrip
x 0.084″ Microstrip
x 0.220″ Microstrip
x 0.084″ Microstrip
x 0.800″ Microstrip
x 0.040″ Microstrip
x 0.800″ Microstrip
x 0.880″ Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.432″ x 0.121″ Microstrip
0.327″ x 0.974″ Microstrip
0.505″ x 0.201″ Microstrip
0.220″ x 0.084″ Microstrip
0.191″ x 0.243″ Microstrip
0.781″ x 0.084″ Microstrip
0.500″ x 0.084″ Microstrip
Arlon, GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 17. MRF7S19080HR3(HSR3) Test Circuit Schematic — TD - SCDMA
Table 6. MRF7S19080HR3(HSR3) Test Circuit Component Designations and Values — TD - SCDMA
Part
Description
Part Number
Manufacturer
C1, C7
15 pF Chip Capacitors
ATC100B150JT500XT
ATC
C2, C11
13 pF Chip Capacitors
ATC100B130JT500XT
ATC
C3
10 μF Chip Capacitor
GRM31MF51A106ZA01B
TDK
C4
1000 pF Chip Capacitor
ATC100B102JT50XT
ATC
C5, C10
0.1 μF Chip Capacitors
C1206C104K5RAC
Kemet
C6
5.1 pF Chip Capacitor
ATC100B5R1CT500XT
ATC
C8
6.8 pF Chip Capacitor
ATC100B6R8CT500XT
ATC
C9
2.2 μF Chip Capacitor
C1825C225J5RAC
Kemet
C12
470 μF, 63 V Electrolytic Capacitor
MCR63V477M13X26
Multicomp
C13
100 μF, 50 V Electrolytic Capacitor
MCR50V107M8X11
Multicomp
R1
330 Ω, 1/4 W Chip Resistor
CRCW12063300FKTA
Vishay
R2
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKTA
Vishay
MRF7S19080HR3 MRF7S19080HSR3
10
RF Device Data
Freescale Semiconductor
C12
R2
R1
C6
C8
C2
C3 C4
C13
C9
C10
C5
C11
C7
CUT OUT AREA
C1
HV7
2.1 GHz
NI780
Rev. 1
Figure 18. MRF7S19080HR3(HSR3) Test Circuit Component Layout — TD - SCDMA
MRF7S19080HR3 MRF7S19080HSR3
RF Device Data
Freescale Semiconductor
11
TYPICAL CHARACTERISTICS
−30
24
ALT/ACPR (dBc)
−35
−40
20
ηD
Adj −L
Adj −U
16
12
−45
Alt−L
8
−50
4
−55
ηD, DRAIN EFFICIENCY (%)
3−Carrier TD−SCDMA
VDD = 28 V, IDQ = 750 mA
f = 2017.5 MHz
Alt−U
−60
0
0
1
3
2
4
5
6
7
9
8
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. 3 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
−30
24
ALT/ACPR (dBc)
−45
−40
ηD
20
16
Adj −U
12
−45
Alt−L
Adj −L
−50
8
−55
4
Alt−U
−60
0.5
ηD, DRAIN EFFICIENCY (%)
6−Carrier TD−SCDMA
VDD = 28 V, IDQ = 750 mA
f = 2017.5 MHz
0
1.5
2.5
3.5
4.5
5.5
6.5
7.5
Pout, OUTPUT POWER (WATTS) AVG.
Figure 20. 6 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
TD - SCDMA TEST SIGNAL
−30
−30
1.28 MHz
Channel BW
−40
−50
−50
−60
−70
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
−80
−90
−100
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−100
−110
−120
(dBm)
(dBm)
−90
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
−60
−70
−80
1.28 MHz
Channel BW
−40
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
−110
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
−130
Center 2.0175 GHz
1.5 MHz
Span 15 MHz
f, FREQUENCY (MHz)
Figure 21. 3 - Carrier TD - SCDMA Spectrum
−120
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
−130
Center 2.0175 GHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
2.5 MHz
Span 25 MHz
f, FREQUENCY (MHz)
Figure 22. 6 - Carrier TD - SCDMA Spectrum
MRF7S19080HR3 MRF7S19080HSR3
12
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
Zload
f = 1950 MHz
f = 2070 MHz
f = 1950 MHz
f = 2070 MHz
Zin
VDD = 28 Vdc, IDQ = 750 mA
f
MHz
Zin
W
Zload
W
1950
1.87 - j6.10
2.98 - j5.42
1960
1.94 - j6.25
3.07 - j5.47
1970
1.77 - j6.04
2.87 - j5.26
1980
1.52 - j5.47
2.53 - j4.77
1990
1.46 - j4.92
2.35 - j4.26
2000
1.49 - j4.62
2.30 - j3.99
2010
1.53 - j4.64
2.34 - j3.98
2020
1.50 - j4.85
2.34 - j4.20
2030
1.50 - j5.15
2.40 - j4.44
2040
1.62 - j5.56
2.59 - j4.75
2050
1.63 - j5.90
2.68 - j5.03
2060
1.47 - j5.86
2.52 - j4.98
2070
1.38 - j5.40
2.35 - j4.54
Zin
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 23. Series Equivalent Input and Load Impedance — TD - SCDMA
MRF7S19080HR3 MRF7S19080HSR3
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
bbb
N
M
T A
B
M
M
ccc
M
T A
(LID)
B
M
S
(LID)
ccc
H
R
(INSULATOR)
M
T A
B
M
aaa
M
M
T A
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRF7S19080HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
M
M
B
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRF7S19080HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF7S19080HR3 MRF7S19080HSR3
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Jan. 2007
Description
• Initial Release of Data Sheet
MRF7S19080HR3 MRF7S19080HSR3
RF Device Data
Freescale Semiconductor
15
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MRF7S19080HR3 MRF7S19080HSR3
Document Number: MRF7S19080H
Rev. 0, 1/2007
16
RF Device Data
Freescale Semiconductor