FREESCALE MRFG35002N6T1

Document Number: MRFG35002N6
Rev. 2, 1/2008
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
MRFG35002N6T1
RF Power Field Effect Transistor
LIFETIME BUY
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ =
65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 10 dB
Drain Efficiency — 27%
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
• 1.5 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
3.5 GHz, 1.5 W, 6 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
8
Vdc
Gate - Source Voltage
VGS
-5
Vdc
RF Input Power
Pin
22
dBm
Tstg
- 65 to +150
°C
Tch
175
°C
TC
- 20 to +85
°C
Symbol
Value (2)
Unit
RθJC
15.2
°C/W
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
1
260
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
MRFG35002N6T1 replaced by MRFG35002N6AT1.
MRFG35002N6T1
1
Characteristic
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
IDSS
—
1.7
—
Adc
Off State Leakage Current
(VGS = - 0.4 Vdc, VDS = 0 Vdc)
IGSS
—
< 1.0
100
μAdc
Off State Drain Current
(VDS = 6 Vdc, VGS = - 2.5 Vdc)
IDSO
—
—
600
μAdc
Off State Current
(VDS = 28.5 Vdc, VGS = - 2.5 Vdc)
IDSX
—
< 1.0
9
mAdc
Gate - Source Cut - off Voltage
(VDS = 3.5 Vdc, IDS = 8.7 mA)
VGS(th)
- 1.2
- 0.9
- 0.7
Vdc
Quiescent Gate Voltage
(VDS = 6 Vdc, ID = 65 mA)
VGS(Q)
- 1.1
- 0.8
- 0.6
Vdc
LIFETIME BUY
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 65 mA, Pout = 158.5 mW Avg., f = 3550 MHz,
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
8.5
10
—
dB
Drain Efficiency
hD
23
27
—
%
ACPR
—
- 41
- 38
dBc
—
W
Adjacent Channel Power Ratio
Typical RF Performance (In Freescale Test Fixture, 50 οhm system) VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P1dB
—
1.5
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
MRFG35002N6T1
2
RF Device Data
Freescale Semiconductor
VBIAS
VSUPPLY
C13
C12
C11
C10
C18
C9
C17
C16
C15
C14
C7
C19
R1
C20
C6
C5
C22
RF
INPUT
C21
Z6
Z1
Z2
Z3
Z4
Z5
RF
OUTPUT
Z11
Z7
Z8
Z9
Z10
Z12
Z13
C24
C1
C3
LIFETIME BUY
Z14
Z1, Z14
Z2
Z3
Z4
Z5
Z6, Z11
Z7
C4
0.044″
0.044″
0.044″
0.468″
0.468″
0.015″
0.031″
C23
x 0.125″ Microstrip
x 0.500″ Microstrip
x 0.052″ Microstrip
x 0.010″ Microstrip
x 0.356″ Microstrip
x 0.549″ Microstrip
x 0.259″ Microstrip
Z8
Z9
Z10
Z12
Z13
PCB
0.420″ x 0.150″ Microstrip
0.150″ x 0.068″ Microstrip
0.290″ x 0.183″ Microstrip
0.044″ x 0.115″ Microstrip
0.044″ x 0.894″ Microstrip
Rogers 4350, 0.020″, εr = 3.5
Figure 1. MRFG35002N6 Test Circuit Schematic
Table 5. MRFG35002N6 Test Circuit Component Designations and Values
Part
Description
C1, C24
13 pF Chip Capacitors
C2
Not Used
C3
Part Number
Manufacturer
100A130JP150X
ATC
1.2 pF Chip Capacitor
08051J1R2BBT
AVX
C4
0.7 pF Chip Capacitor
08051J0R7BBT
AVX
C5, C6, C21, C22
5.6 pF Chip Capacitors
08051J6R8BBT
AVX
C7, C20
10 pF Chip Capacitors
100A100JP150X
ATC
C8, C19
100 pF Chip Capacitors
100A101JP150X
ATC
C9, C18
100 pF Chip Capacitors
100B101JP500X
ATC
C10, C17
1000 pF Chip Capacitors
100B102JP50X
ATC
C11, C16
0.1 μF Chip Capacitors
CDR33BX104AKWS
Kemet
C12, C15
39K pF Chip Capacitors
200B393KP50X
ATC
C13, C14
10 μF Chip Capacitors
GRM55DR61H106KA88B
Kemet
C23
0.2 pF Chip Capacitor
08051J0R2BBT
AVX
R1
100 Ω, 1/4 W Chip Resistor
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
C8
MRFG35002N6T1
RF Device Data
Freescale Semiconductor
3
C13
C12
C11
C10
C18
C9
C17
C16
C15
C14
C7
R1
C5
C6
C19
C20
LIFETIME BUY
C22
C21
C2
C1
C3
C24
C23
C4
MRFG35002M6, Rev. 2
3.5 GHz - 3.6 GHz
Figure 2. MRFG35002N6 Test Circuit Component Layout
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
C8
MRFG35002N6T1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
12
GT
10
40
30
20
8
10
6
ηD
4
0
5
10
15
20
25
0
30
LIFETIME BUY
Pout, OUTPUT POWER (dBm)
−20
0
VDS = 6 Vdc, IDQ = 75 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
ΓS = 0.813é−115.4_, ΓL = 0.748é−147.8_
−30
IRL
−40
−5
−10
−50
−15
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 3. Transducer Gain and Drain
Efficiency versus Output Power
ACPR
−60
0
6
12
18
24
−20
30
Pout, OUTPUT POWER (dBm)
Figure 4. Single - Carrier W - CDMA ACPR and
Input Return Loss versus Output Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
GT, TRANSDUCER GAIN (dB)
VDS = 6 Vdc, IDQ = 75 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
ΓS = 0.813é−115.4_, ΓL = 0.748é−147.8_
ηD, DRAIN EFFICIENCY (%)
50
14
MRFG35002N6T1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
12
10
40
30
Gps
8
20
6
10
ηD
4
0
6
12
18
24
0
30
Figure 5. Single - Carrier W - CDMA Power Gain
and Drain Efficiency versus Output Power
−20
−5
VDS = 6 Vdc, IDQ = 65 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−30
−10
IRL
−40
−15
−50
−20
ACPR
−60
0
6
12
18
24
−25
30
Pout, OUTPUT POWER (dBm)
Figure 6. Single - Carrier W - CDMA ACPR and
Input Return Loss versus Output Power
NOTE: Data is generated from the test circuit shown.
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
LIFETIME BUY
Pout, OUTPUT POWER (dBm)
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
50
VDS = 6 Vdc, IDQ = 65 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
ηD, DRAIN EFFICIENCY (%)
14
MRFG35002N6T1
6
RF Device Data
Freescale Semiconductor
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.50
0.906
- 173.61
6.43
84.54
0.0316
1.5
0.713
- 174.6
0.55
0.906
- 175.37
5.86
82.68
0.0319
0.8
0.714
- 175.9
0.60
0.906
- 176.93
5.38
80.94
0.0320
- 0.6
0.714
- 177.3
0.65
0.906
- 178.40
4.98
79.21
0.0317
- 1.7
0.713
- 178.6
0.70
0.908
- 179.79
4.65
77.51
0.0320
- 2.8
0.713
- 179.9
0.75
0.907
179.01
4.34
75.94
0.0320
- 3.3
0.712
178.9
0.80
0.907
177.87
4.08
74.33
0.0321
- 4.3
0.713
177.6
0.85
0.907
176.78
3.85
72.72
0.0323
- 5.5
0.713
176.4
0.90
0.908
175.82
3.65
71.14
0.0324
- 6.3
0.713
175.1
0.95
0.908
174.92
3.46
69.56
0.0322
- 6.7
0.712
173.7
1.00
0.907
174.04
3.30
68.00
0.0322
- 7.7
0.711
172.4
1.05
0.908
173.19
3.15
66.45
0.0324
- 8.9
0.712
171.1
1.10
0.909
172.44
3.02
64.84
0.0325
- 9.2
0.711
169.7
1.15
0.909
171.49
2.90
63.23
0.0327
- 10.6
0.711
168.2
1.20
0.907
170.67
2.79
61.71
0.0327
- 11.6
0.711
167.0
1.25
0.907
169.76
2.68
60.14
0.0328
- 12.0
0.709
165.7
1.30
0.907
168.81
2.59
58.62
0.0328
- 13.3
0.709
164.5
1.35
0.911
167.94
2.50
57.03
0.0330
- 14.1
0.713
163.5
1.40
0.904
167.04
2.43
55.47
0.0334
- 14.8
0.706
162.3
1.45
0.906
165.86
2.36
53.91
0.0334
- 16.2
0.707
161.1
1.50
0.905
164.68
2.30
52.30
0.0333
- 16.9
0.707
160.1
1.55
0.907
162.72
2.18
51.28
0.0325
- 17.3
0.712
161.0
1.60
0.908
161.85
2.11
49.87
0.0327
- 17.9
0.712
160.0
1.65
0.908
160.93
2.06
48.41
0.0328
- 18.7
0.713
159.1
1.70
0.908
160.05
2.00
46.98
0.0328
- 19.8
0.713
158.1
1.75
0.907
159.11
1.95
45.59
0.0330
- 20.1
0.712
157.3
1.80
0.907
158.22
1.90
44.16
0.0330
- 20.6
0.713
156.4
1.85
0.907
157.41
1.86
42.77
0.0330
- 21.2
0.714
155.6
1.90
0.907
156.52
1.82
41.41
0.0332
- 22.4
0.713
154.8
1.95
0.907
155.57
1.78
39.95
0.0332
- 22.9
0.713
154.0
2.00
0.906
154.82
1.74
38.64
0.0335
- 23.8
0.713
153.4
2.05
0.905
153.97
1.71
37.30
0.0336
- 24.5
0.712
152.7
2.10
0.904
153.06
1.67
35.97
0.0339
- 25.1
0.712
152.1
2.15
0.905
152.15
1.65
34.63
0.0339
- 26.0
0.712
151.5
2.20
0.903
151.26
1.62
33.28
0.0340
- 26.8
0.711
150.9
2.25
0.902
150.30
1.59
31.95
0.0341
- 27.4
0.709
150.3
2.30
0.901
149.48
1.57
30.67
0.0344
- 28.0
0.709
149.7
2.35
0.901
148.64
1.55
29.34
0.0345
- 28.5
0.707
149.2
2.40
0.900
147.66
1.53
28.02
0.0348
- 29.1
0.705
148.6
2.45
0.899
146.68
1.52
26.72
0.0351
- 29.6
0.703
148.0
2.50
0.899
145.77
1.50
25.40
0.0353
- 30.6
0.703
147.3
2.55
0.897
144.90
1.49
24.06
0.0356
- 31.2
0.699
146.8
2.60
0.896
143.88
1.47
22.69
0.0361
- 31.7
0.697
146.2
2.65
0.895
143.15
1.46
21.34
0.0365
- 32.5
0.695
145.6
2.70
0.894
142.07
1.45
19.94
0.0370
- 33.3
0.692
144.9
2.75
0.893
141.15
1.43
18.49
0.0375
- 34.0
0.689
144.2
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
LIFETIME BUY
Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 65 mA
MRFG35002N6T1
RF Device Data
Freescale Semiconductor
7
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2.80
0.890
140.26
1.42
17.14
0.0381
- 35.1
0.687
143.5
2.85
0.889
139.29
1.42
15.69
0.0385
- 36.3
0.684
142.8
2.90
0.888
138.19
1.41
14.28
0.0386
- 37.0
0.682
142.0
2.95
0.887
137.20
1.40
12.80
0.0388
- 38.3
0.678
141.2
3.00
0.885
136.18
1.40
11.33
0.0392
- 38.9
0.676
140.3
3.05
0.884
135.00
1.39
9.81
0.0394
- 39.6
0.671
139.4
3.10
0.883
133.98
1.38
8.29
0.0398
- 40.5
0.668
138.4
3.15
0.881
132.89
1.38
6.77
0.0402
- 41.3
0.665
137.3
3.20
0.880
131.67
1.37
5.14
0.0407
- 42.2
0.662
136.2
3.25
0.879
130.56
1.37
3.56
0.0412
- 42.9
0.658
135.1
3.30
0.878
129.47
1.36
1.92
0.0415
- 44.0
0.656
133.9
3.35
0.876
128.25
1.36
0.22
0.0419
- 45.1
0.651
132.8
3.40
0.876
127.01
1.35
- 1.44
0.0422
- 46.2
0.648
131.5
3.45
0.874
125.80
1.35
- 3.12
0.0428
- 47.2
0.646
130.2
3.50
0.872
124.44
1.35
- 4.89
0.0431
- 48.0
0.642
129.0
3.55
0.871
123.10
1.34
- 6.62
0.0438
- 49.1
0.638
127.5
3.60
0.871
121.58
1.34
- 8.32
0.0442
- 50.2
0.637
126.0
3.65
0.867
120.32
1.33
- 10.12
0.0449
- 51.3
0.633
124.9
3.70
0.867
118.80
1.33
- 11.94
0.0455
- 53.0
0.629
123.5
3.75
0.865
117.37
1.33
- 13.68
0.0458
- 54.1
0.626
122.0
3.80
0.864
115.86
1.32
- 15.54
0.0458
- 55.7
0.624
120.5
3.85
0.863
114.26
1.32
- 17.42
0.0460
- 56.6
0.620
119.1
3.90
0.861
112.73
1.31
- 19.27
0.0464
- 58.1
0.617
117.6
3.95
0.859
111.11
1.31
- 21.16
0.0469
- 59.2
0.615
116.1
4.00
0.859
109.30
1.31
- 23.12
0.0472
- 60.4
0.611
114.7
4.05
0.858
107.69
1.30
- 25.03
0.0476
- 61.5
0.608
113.2
4.10
0.855
106.01
1.30
- 26.95
0.0482
- 62.6
0.605
111.8
4.15
0.854
104.09
1.30
- 28.98
0.0488
- 64.0
0.602
110.3
4.20
0.852
102.36
1.30
- 30.89
0.0491
- 65.7
0.599
108.8
4.25
0.850
100.53
1.29
- 32.85
0.0498
- 67.1
0.596
107.4
4.30
0.851
98.59
1.29
- 34.85
0.0500
- 68.5
0.593
106.0
4.35
0.848
96.65
1.29
- 36.86
0.0504
- 70.2
0.589
104.4
4.40
0.847
94.71
1.29
- 38.87
0.0509
- 71.6
0.586
102.9
4.45
0.846
92.56
1.29
- 40.97
0.0515
- 73.3
0.583
101.4
4.50
0.845
90.47
1.29
- 43.11
0.0519
- 74.6
0.580
99.8
4.55
0.843
88.43
1.29
- 45.16
0.0526
- 76.2
0.576
98.2
4.60
0.840
86.15
1.29
- 47.39
0.0531
- 77.8
0.572
96.5
4.65
0.839
83.96
1.29
- 49.59
0.0537
- 79.6
0.568
94.8
4.70
0.837
81.79
1.29
- 51.81
0.0541
- 81.3
0.564
93.0
4.75
0.835
79.39
1.30
- 54.06
0.0546
- 83.0
0.559
91.2
4.80
0.834
77.08
1.30
- 56.36
0.0550
- 85.0
0.556
89.4
4.85
0.832
74.81
1.30
- 58.58
0.0554
- 86.6
0.550
87.6
4.90
0.831
72.32
1.30
- 60.91
0.0560
- 88.1
0.546
85.5
4.95
0.831
69.82
1.31
- 63.36
0.0565
- 90.0
0.542
83.6
5.00
0.829
67.43
1.31
- 65.78
0.0571
- 91.8
0.537
81.5
5.05
0.826
64.82
1.31
- 68.28
0.0578
- 93.5
0.532
79.2
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
LIFETIME BUY
Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 65 mA (continued)
MRFG35002N6T1
8
RF Device Data
Freescale Semiconductor
Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 65 mA (continued)
S21
S12
S22
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.826
62.21
1.31
- 70.79
0.0583
- 95.6
0.528
77.0
5.15
0.824
59.75
1.31
- 73.33
0.0592
- 97.5
0.524
74.7
5.20
0.821
57.08
1.31
- 75.85
0.0596
- 99.5
0.519
72.3
5.25
0.819
54.50
1.31
- 78.30
0.0605
- 101.5
0.516
70.0
5.30
0.818
51.91
1.32
- 80.93
0.0610
- 103.7
0.512
67.4
5.35
0.815
49.24
1.32
- 83.65
0.0617
- 105.8
0.510
64.6
5.40
0.814
46.40
1.32
- 86.36
0.0626
- 108.2
0.506
61.9
5.45
0.812
43.69
1.32
- 89.16
0.0629
- 110.5
0.501
59.0
LIFETIME BUY
|S11|
5.10
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
S11
f
GHz
MRFG35002N6T1
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
0.146
3.71
A
F
0.095
2.41
3
B
D
1
2
R
0.115
2.92
0.115
2.92
L
0.020
0.51
4
0.35 (0.89) X 45_" 5 _
N
K
Q
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
4
ZONE W
2
1
3
G
S
C
Y
Y
E
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1.
2.
3.
4.
DRAIN
GATE
SOURCE
SOURCE
ZONE X
VIEW Y - Y
mm
SOLDER FOOTPRINT
P
U
H
ZONE V
inches
10_DRAFT
CASE 466 - 03
ISSUE D
PLD- 1.5
PLASTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
0.255
0.265
0.225
0.235
0.065
0.072
0.130
0.150
0.021
0.026
0.026
0.044
0.050
0.070
0.045
0.063
0.160
0.180
0.273
0.285
0.245
0.255
0.230
0.240
0.000
0.008
0.055
0.063
0.200
0.210
0.006
0.012
0.006
0.012
0.000
0.021
0.000
0.010
0.000
0.010
MILLIMETERS
MIN
MAX
6.48
6.73
5.72
5.97
1.65
1.83
3.30
3.81
0.53
0.66
0.66
1.12
1.27
1.78
1.14
1.60
4.06
4.57
6.93
7.24
6.22
6.48
5.84
6.10
0.00
0.20
1.40
1.60
5.08
5.33
0.15
0.31
0.15
0.31
0.00
0.53
0.00
0.25
0.00
0.25
MRFG35002N6T1
10
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Jan. 2008
Description
• Listed replacement part, p. 1
• Added Product Documentation and Revision History, p. 11
MRFG35002N6T1
RF Device Data
Freescale Semiconductor
11
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MRFG35002N6T1
Document Number: MRFG35002N6
Rev. 2, 1/2008
12
RF Device Data
Freescale Semiconductor