MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1600 mA, Pout = 47 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20 dB Drain Efficiency — 30% ACPR @ 750 kHz Offset — - 47.1 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Device Designed for Push - Pull Operation Only • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 880 MHz, 47 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 1 NI - 860C3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 220 W CW Case Temperature 76°C, 47 W CW RθJC °C/W 0.25 0.28 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 Document Number: MRF6P9220H Rev. 3, 8/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 1 Table 3. ESD Protection Characteristics Class 3B (Minimum) Machine Model (per EIA/JESD22 - A115) C (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (4) (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (4) (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 350 μAdc) VGS(th) 1 2.2 3 Vdc Gate Quiescent Voltage (3) (VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain - Source On - Voltage (1) (VGS = 10 Vdc, ID = 2.4 Adc) VDS(on) 0.1 0.22 0.3 Vdc Crss — 2.1 — pF Off Characteristics (1) LIFETIME BUY On Characteristics Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 47 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 18.5 20 23 dB Drain Efficiency ηD 28.5 30 — % ACPR — - 47.1 - 45 dBc IRL — - 14 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. 2. 3. 4. Each side of device measured separately. Part internally matched both on input and output. Measurement made with device in push - pull configuration. Drains are tied together internally as this is a total device value. LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 Test Methodology Human Body Model (per JESD22 - A114) MRF6P9220HR3 2 RF Device Data Freescale Semiconductor R1 + B1 C23 + R3 C1 C2 C3 Z19 COAX1 Z2 RF INPUT Z12 Z8 Z14 Z16 C14 C10 Z3 C6 Z5 RF Z18 OUTPUT C11 DUT C5 R2 C17 C18 COAX3 Z4 C4 Z1 C16 C15 Z10 Z6 VSUPPLY + C12 Z9 Z7 Z13 Z15 Z17 LIFETIME BUY C13 B2 COAX2 VBIAS Z20 Z11 COAX4 + C9 C7 + C8 C24 Z1, Z18 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 0.401″ x 0.081″ Microstrip 0.563″ x 0.101″ Microstrip 0.416″ x 0.727″ Microstrip 0.058″ x 1.01″ Microstrip 0.191″ x 0.507″ Microstrip Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z19, Z20 PCB C19 VSUPPLY + C20 C21 C22 1.054″ x 0.150″ Microstrip 0.225″ x 0.507″ Microstrip 0.440″ x 0.435″ Microstrip 0.123″ x 0.215″ Microstrip 0.165″ x 0.339″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6P9220HR3 Test Circuit Schematic Table 5. MRF6P9220HR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Short 2743019447 Fair - Rite C1, C9 1.0 μF, 50 V Tantalum Chip Capacitors T491C105K050AT Kemet C2, C7, C17, C21 0.1 μF Chip Capacitors CDR33BX104AKWT Kemet C3, C8, C16, C20 1000 pF Chip Capacitors ATC100B102JP50XT ATC C4, C5, C13, C14 100 pF Chip Capacitors ATC100B101JP500XT ATC C6, C12 8.2 pF Chip Capacitors ATC100B8R2BT500XT ATC C10 9.1 pF Chip Capacitor ATC100B9R1BT500XT ATC C11 1.8 pF Chip Capacitor ATC100B1R8BT500XT ATC C15, C19 47 μF, 50 V Electrolytic Capacitors EMVY500ADA470MF806 Nippon Chemi - Con C18, C22 470 μF, 63 V Electrolytic Capacitors EMVY630GTR471MLN0S Nippon Chemi - Con C23, C24 22 pF Chip Capacitors ATC100B220FT500XT ATC Coax1, 2, 3, 4 50 Ω, Semi Rigid Coax, 2.40″ Long UT - 141A - TP Micro - Coax R1, R2 10 Ω, 1/4 W Chip Resistors CRCW120610R0FKEA Vishay R3 1.0 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 VBIAS MRF6P9220HR3 RF Device Data Freescale Semiconductor 3 C15 VGG B1 C2 R1 VDD C23 C3 R3 C16 MRF6P9220, Rev. 1 C6 C5 CUT OUT AREA C4 C14 C11 C10 C12 C13 COAX4 COAX2 C20 VGG C9 C7 C17 COAX3 COAX1 LIFETIME BUY C18 B2 C8 VDD C24 R2 C19 Figure 2. MRF6P9220HR3 Test Circuit Component Layout C21 C22 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 C1 MRF6P9220HR3 4 RF Device Data Freescale Semiconductor 30 29 Gps, POWER GAIN (dB) 20.4 20.1 Gps 28 27 19.8 19.5 ACPR −45 VDD = 28 Vdc, Pout = 47 W (Avg.) IDQ = 1600 mA, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 19.2 18.9 IRL 18.6 18.3 −50 −55 −60 ALT1 18 850 −65 860 870 880 890 −70 910 900 −7 −9 −11 −13 −15 −17 f, FREQUENCY (MHz) ηD Gps, POWER GAIN (dB) V = 28 Vdc, Pout = 94 W (Avg.) 19.6 DD IDQ = 1600 mA, N−CDMA IS−95 19.4 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 19.2 19 40 39 Gps 38 −35 ACPR 18.8 −40 18.6 −45 IRL 18.4 18.2 18 850 −50 ALT1 −55 860 870 880 890 −60 910 900 −7 −9 −11 −13 −15 −17 f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 94 Watts Avg. 20.5 −10 20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2400 mA Gps, POWER GAIN (dB) 41 IRL, INPUT RETURN LOSS (dB) 42 ηD, DRAIN EFFICIENCY (%) 20 19.8 ACPR (dBc), ALT1 (dBc) LIFETIME BUY Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 47 Watts Avg. 2000 mA 1600 mA 19.5 19 1200 mA 18.5 800 mA 18 VDD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz Two−Tone Measurements, 100 kHz Tone Spacing 17.5 17 VDD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz Two−Tone Measurements, 100 kHz Tone Spacing −20 −30 IDQ = 800 mA −40 1200 mA 2400 mA 2000 mA −50 1600 mA −60 3 10 100 500 5 10 100 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 ηD 20.7 IRL, INPUT RETURN LOSS (dB) 31 ACPR (dBc), ALT1 (dBc) 21 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS 500 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6P9220HR3 RF Device Data Freescale Semiconductor 5 −20 −30 −40 −50 3rd Order −60 5th Order −70 7th Order −80 −90 10 100 −20 VDD = 28 Vdc, Pout = 220 W (PEP) IDQ = 1600 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −30 3rd Order −40 5th Order −50 7th Order −60 500 0.1 10 1 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing P6dB = 54.95 dBm (312.77 W) 61 Ideal P3dB = 54.60 dBm (288.76 W) 59 57 P1dB = 54.05 dBm (255.09 W) 55 Actual 53 VDD = 28 Vdc, IDQ = 1600 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 880 MHz 51 49 29 31 33 35 37 39 41 Pin, INPUT POWER (dBm) 50 −30 VDD = 28 Vdc, IDQ = 1600 mA f = 880 MHz, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 40 25_C −30_C −35 25_C ηD 85_C 30 TC = −30_C −40 Gps 20 −45 25_C 85_C ACPR 10 −50 0 1 10 100 −55 300 Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulsed CW Output Power versus Input Power LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 VDD = 28 Vdc, IDQ = 1600 mA, f1 = 879.95 MHz f2 = 880.05 MHz, Two−Tone Measurements 7 LIFETIME BUY IMD, INTERMODULATION DISTORTION (dBc) −10 Pout, OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 50 MRF6P9220HR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 21 72 64 Gps 25_C 20 56 85_C 19.5 48 25_C 40 19 85_C 18.5 32 ηD 24 18 VDD = 28 Vdc IDQ = 1600 mA f = 880 MHz 17.5 17 7 10 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 20.5 −30_C 16 8 500 100 Figure 11. Power Gain and Drain Efficiency versus CW Output Power 20.5 IDQ = 1600 mA f = 880 MHz Gps, POWER GAIN (dB) 19.5 18.5 17.5 16.5 VDD = 24 V 28 V 32 V 15.5 14.5 0 50 100 150 200 250 300 350 400 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power 108 MTTF (HOURS) LIFETIME BUY Pout, OUTPUT POWER (WATTS) CW 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 47 W Avg., and ηD = 30%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 TC = −30_C Figure 13. MTTF Factor versus Junction Temperature MRF6P9220HR3 RF Device Data Freescale Semiconductor 7 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. . . . . ............ .. .. .. .. .. .. . .. ... . .. . −ALT1 in 30 kHz +ALT1 in 30 kHz . .. . Integrated BW Integrated BW .................. ......... .......... ..... .......... . . ................ ...... ... .. . . . . . . . .............. ................. ......... ........... ... ...... ...... ......... .......... . . . . . . . . . ......... ...... . . . ....... −ACPR in 30 kHz +ACPR in 30 kHz .................. . . . . .. .... . . ............ ....... ............... . ........ . ................ ... . . . . . Integrated BW Integrated BW ........ ...... ........... ...... ... .......... ........... −100 LIFETIME BUY PEAK−TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum 3.6 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 N - CDMA TEST SIGNAL MRF6P9220HR3 8 RF Device Data Freescale Semiconductor f = 910 MHz Zload Zo = 10 Ω f = 850 MHz LIFETIME BUY f = 910 MHz Zsource VDD = 28 Vdc, IDQ = 1600 mA, Pout = 47 W Avg. f MHz Zsource Ω Zload Ω 850 3.50 - j7.10 6.04 - j0.49 865 3.59 - j7.07 6.83 - j1.14 880 3.03 - j6.98 7.41 - j1.19 895 2.42 - j6.20 7.60 - j0.98 910 2.26 - j5.39 8.06 - j0.45 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 16. Series Equivalent Source and Load Impedance LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 f = 850 MHz MRF6P9220HR3 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS 4 G ccc R T A M B M Q bbb 2X L M J T A M M B M (LID) 2 1 B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. (FLANGE) 5 4X S (INSULATOR) bbb M T A K 3 4X M B M 4 B D bbb M ccc T A M M B T A M M B M F N (LID) E M H bbb A C (INSULATOR) M T A M B M A T SEATING PLANE DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF DRAIN DRAIN GATE GATE SOURCE CASE 375G - 04 ISSUE G NI - 860C3 MRF6P9220HR3 10 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 3 Aug. 2008 Description • Listed replacement part and Device Migration notification reference number, p. 1 • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 • Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic range, p. 6 • Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 7 • Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added Product Documentation and Revision History, p. 11 MRF6P9220HR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 Fax: +1 - 303 - 675 - 2150 [email protected] Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2006, 2008. All rights reserved. MRF6P9220HR3 Document Number: MRF6P9220H Rev. 3, 8/2008 12 RF Device Data Freescale Semiconductor