GSI GS71208TP

GS71208TP
TSOP
Commercial Temp
Industrial Temp
128K x 8
1Mb Asynchronous SRAM
Features
8 ns
3.3 V VDD
Center VDD and VSS
TSOP-II 128K x 8-Pin Configuration
• Fast access time: 8 ns
• CMOS low power operation: 150 mA at minimum cycle time
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package line up
TP: 400 mil, 32-pin TSOP Type II package
The GS71208 is a high speed CMOS Static RAM organized as
131,072 words by 8 bits. Static design eliminates the need for
external clocks or timing strobes. The GS operates on a single
3.3 V power supply and all inputs and outputs are TTL-compatible. The GS71208 is available in a 400 mil TSOP Type-II
package.
32
A4
A2
2
31
A5
A1
3
30
A6
A0
4
29
A7
CE
5
28
OE
DQ1
6
27
DQ8
DQ2
7
26
DQ7
VDD
8
25
VSS
32-pin
400 mil TSOP II
9
24
DQ3
10
23
DQ4
11
22
DQ5
WE
12
21
A8
A16
13
20
A9
A15
14
19
A10
A14
15
18
A11
A13
16
17
A12
VDD
DQ6
Description
A0–A16
Address input
DQ1–DQ8
Data input/output
CE
Chip enable input
WE
Write enable input
OE
Output enable input
VDD
+3.3 V power supply
VSS
Ground
NC
No connect
Rev: 1.03 10/2001
1
VSS
Description
Pin Descriptions
Symbol
A3
1/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
GS71208TP
Block Diagram
A0
Address
Input
Buffer
Row
Decoder
Memory Array
Column
Decoder
A16
CE
WE
OE
I/O Buffer
Control
DQ1
DQ8
Truth Table
CE
OE
WE
DQ1 to DQ8
VDD Current
H
X
X
Not Selected
ISB1, ISB2
L
L
H
Read
L
X
L
Write
L
H
H
High Z
IDD
Note: X: “H” or “L”
Rev: 1.03 10/2001
2/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
GS71208TP
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
Input Voltage
VIN
–0.5 to VDD +0.5
(≤ 4.6 V max.)
V
Output Voltage
VOUT
–0.5 to VDD +0.5
(≤ 4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
–55 to 150
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -8
VDD
3.135
3.3
3.6
V
Input High Voltage
VIH
2.0
—
VDD +0.3
V
Input Low Voltage
VIL
–0.3
—
0.8
V
Ambient Temperature,
Commercial Range
TAc
0
—
70
oC
Ambient Temperature,
Industrial Range
T AI
–40
—
85
o
C
Note:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
CIN
VIN = 0 V
5
pF
Output Capacitance
COUT
VOUT = 0 V
7
pF
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Rev: 1.03 10/2001
3/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
GS71208TP
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
IIL
VIN = 0 to VDD
–1 uA
1 uA
Output Leakage
Current
ILO
Output High Z
VOUT = 0 to VDD
–1 uA
1 uA
Output High Voltage
VOH
IOH = –4mA
2.4
—
Output Low Voltage
VOL
ILO = +4mA
—
0.4 V
Power Supply Currents
Parameter
Operating
Supply
Current
Standby
Current
Standby
Current
Rev: 1.03 10/2001
0 to 70°C
–40 to 85°C
8 ns
8 ns
IDD (max)
CE ≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
150 mA
160 mA
ISB1 (max)
CE ≥ VIH
All other inputs
≥ VIH or ≤VIL
Min. cycle time
55 mA
65 mA
ISB2 (max)
CE ≥ VDD – 0.2 V
All other inputs
≥ VDD – 0.2 V or ≤ 0.2 V
15 mA
25 mA
Symbol
Test Conditions
4/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
GS71208TP
AC Test Conditions
Output Load 1
Parameter
Conditions
Input high level
VIH = 2.4 V
Input low level
VIL = 0.4 V
50Ω
Input rise time
tr = 1 V/ns
VT = 1.4 V
Input fall time
tf = 1 V/ns
Input reference level
1.4 V
Output Load 2
Output reference level
1.4 V
3.3 V
Output load
Fig. 1& 2
DQ
30pF1
589Ω
DQ
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ
5pF1
434Ω
AC Characteristics
Read Cycle
Parameter
Symbol
Read cycle time
-8
Unit
Min
Max
tRC
8
—
ns
Address access time
tAA
—
8
ns
Chip enable access time (CE)
tAC
—
8
ns
Output enable to output valid (OE)
tOE
—
3.5
ns
Output hold from address change
tOH
3
—
ns
Chip enable to output in low Z (CE)
tLZ*
3
—
ns
Output enable to output in low Z (OE)
tOLZ*
0
—
ns
Chip disable to output in High Z (CE)
tHZ*
—
4
ns
Output disable to output in High Z (OE)
tOHZ*
—
3.5
ns
* These parameters are sampled and are not 100% tested
Rev: 1.03 10/2001
5/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
GS71208TP
Read Cycle 1: CE = OE = VIL, WE = VIH
tRC
Address
tAA
tOH
Data Out
Previous Data
Data valid
Read Cycle 2: WE = VIH
tRC
Address
tAA
CE
tAC
tHZ
tLZ
OE
tOE
Data Out
Rev: 1.03 10/2001
tOLZ
High impedance
tOHZ
DATA VALID
6/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
GS71208TP
Write Cycle
Parameter
Symbol
Write cycle time
-8
Unit
Min
Max
tWC
8
—
ns
Address valid to end of write
tAW
5.5
—
ns
Chip enable to end of write
tCW
5.5
—
ns
Data set up time
tDW
4
—
ns
Data hold time
tDH
0
—
ns
Write pulse width
tWP
5.5
—
ns
Address set up time
tAS
0
—
ns
Write recovery time (WE)
tWR
0
—
ns
Write recovery time (CE)
tWR1
0
—
ns
Output Low Z from end of write
tWLZ*
3
—
ns
Write to output in High Z
tWHZ*
—
3.5
ns
* These parameters are sampled and are not 100% tested
Rev: 1.03 10/2001
7/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
GS71208TP
Write Cycle 1: WE control
tWC
Address
tAW
tWR
OE
tCW
CE
tAS
tWP
WE
tDW
Data In
tDH
DATA VALID
tWHZ
tWLZ
Data Out
HIGH IMPEDANCE
Write Cycle 2: CE control
tWC
Address
tAW
tWR1
OE
tAS
tCW
CE
tWP
WE
tDW
Data In
DATA VALID
Data Out
Rev: 1.03 10/2001
tDH
HIGH IMPEDANCE
8/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
GS71208TP
32-Pin TSOP-II, 400mil
1
e
E
A
b
Detail A
Q
L1
y
L
A1
A
A2
ZD
Dimension in inch
c
E1
32
D
Dimension in mm
Symbol
min
nom
max
min
nom
max
A
0.039
—
0.05
—
—
1.27
A1
0.002
—
0.006
0.01
—
0.15
A2
0.037
0.040
0.045
0.90
1.02
1.14
b
0.012
0.016
0.018
0.30
0.40
0.45
c
0.0047
0.0051
0.0062
0.12
0.13
0.16
D
0.820
0.825
0.830
20.82
20.95
21.08
ZD
—
0.037
—
—
0.95
—
E
0.455
0.463
0.471
11.56
11.76
11.96
E1
0.395
0.400
0.405
10.03
10.16
10.29
e
—
0.05
—
—
1.27
—
L
0.017
0.020
0.023
0.40
0.50
0.60
L1
0.024
0.031
0.039
0.60
0.80
1.00
y
0.00
—
0.003
0.00
—
0.76
Q
0o
—
5o
0o
—
5o
Note:
1.Dimension D includes mold flash, protrusions or gate burrs.
2. Dimension E does not include interlead flash.
3. Controlling dimension: mm
Rev: 1.03 10/2001
9/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
GS71208TP
Ordering Information
Part Number*
Package
Access Time
Temp. Range
GS71208TP-8
400 mil TSOP-II
8 ns
Commercial
Status
*
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. For example:
GS71208TP-8T
Rev: 1.03 10/2001
10/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
GS71208TP
Revision History
Rev. Code: Old;
New
1.00 12/1999/1.01 12/1999
Types of Changes
Format or Content
Content
GS71208Rev1.01 12/1999KRev
1.01 2/2000L
Format/Content
71208_r1_01; 71208_r1_02
Format/Content
71208_r1_02; 71208_r1_03
Content
Rev: 1.03 10/2001
Page #/Revisions/Reason
1.
Added TP package to 71208
• GSI LogoAdded Dimension D to 32 pin 400 ml TSOP II Package.
• Updated format to comply with Technical Publications standard
• Specifically noted that numbers in Power Supply Currents table are worst
case scenario
• Removed all references to other parts except 71208TP-8
11/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.