HITACHI AW01

ZENER DIODE
AW01
OUTLINE DRAWING
φ 3.5 MAX
(0.14)
29MIN.
(1.14)
Unit in mm(inch)
φ 0.8
(0.03)
06NA
29MIN.
(1.14)
5MAX
(0.2)
62MIN. (2.44)
Direction of polarity
Cathode band (Red)
• For stabilized power supply.
• Diffused-junction. Glass passivated and
encapsulated.
Type mark (Red)
FEATURES
Weight: 0.35 (g)
ABSOLUTE MAXIMUM RATINGS
Items
Symbols
Ratings
Units
Permissible Power Dissipation
P
W
1.0
Operating Junction Temperature
Tj
°C
-40 ~ +150
Storage Temperature
Tstg
°C
-40 ~ +150
Maximum Permissible Current
Non-Repetitive Peak Reverse OneCycle Dissipation
IZM
mA
Refer to characteristics column
PRSM
Wp
80
Notes
(1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.
CHARACTERISTICS(TL=25°C)
Type
AW01-06
AW01-07
AW01-08
AW01-09
AW01-10
AW01-11
AW01-12
AW01-13
AW01-15
AW01-16
AW01-18
AW01-20
AW01-22
AW01-24
AW01-27
AW01-30
AW01-33
Characteristics
Zener Voltage Vz (V)
Maximum
Dynamic
Impedance
Minimum
Maximum
Zz (ohm)
5.2
6.2
7.7
8.5
9.4
10.4
11.4
12.4
13.5
15.3
16.8
18.8
20.8
22.7
25.1
28.0
31.0
6.8
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
9
7
3
3
5
5
8
8
12
12
15
15
15
15
15
15
15
Test Current
Iz
(mA)
60
25
25
25
25
25
25
25
15
15
15
15
15
10
10
10
10
Maximum
Permissible
Current
(TL=100°C)
(L=10mm)
IZM(mA)
160
135
120
105
95
85
75
70
65
60
52
48
43
40
35
32
30
Typical
Zener
Voltage
Temperature
Coefficient
γz(%/°C)
0.025
0.035
0.045
0.053
0.058
0.063
0.065
0.068
0.072
0.074
0.076
0.078
0.080
0.081
0.082
0.083
0.084
PDE-AW01-0
AW01
Typical zener characteristics
Typical dynamic impedance vs. zener current
200
100
DYNAMIC IMPEDANCE (Ω)
AW01-30
40
AW01-33
60
AW01-27
80
AW01-24
100
AW01-20
120
AW01-22
140
AW01-15
AW01-16
AW01-07
AW01-08
AW01-09
AW01-10
AW01-11
AW01-12
AW01-13
160
AW01-18
AW01-06
180
ZENER CURRENT (mA)
TL=25˚C
10
AW01-24
AW01-16
1
20
AW01-07
0
0
4
8
12
16
20
24
28
0.3
1
32
10
ZENER VOLTAGE (V)
Max. allowable power dissipation vs. ambient temperature
Max. allowable power dissipation vs. lead temperature
1.4
MAX. ALLOWABLE PWOER DISSIPATION (W)
MAX. ALLOWABLE PWOER DISSIPATION (W)
1.4
1.2
1.0
0.8
Lead length
L=10mm
20mm
25mm
0.6
L
L
0.4
PC board (100x180x1.6t)
Copper foil ( 5.5)
0.2
0
0
20
40
60
80
100
120
1.2
1.0
0.8
0.6
Lead temp
0.2
0
20
PC board
(100x180x1.6t)
Copper foil ( 5.5)
40
60
80
100
120
140
LEAD TEMPERATURE (˚C)
Reverse power characteristic
(Non-repetitive)
Steady state thermal impedance
100
140
50
1
10
CYCLES
100
Rth(j - a)
100
80
Rth(j - l)
60
Ambient temp. measured point
Lead temp.
Lead
measured poin
length
(φ0.5 thermocouple)
2
Copper foil ( 5.5)
40
15
1 cycle
120
20
10ms
Reverse
instantaneous
loss
STEADY STATE THERMAL IMPEDANCE (˚C/W)
REVERSE INSTANTANEOUS PWER DISSIPATION (W)
L
L
0.4
0
140
Lead length
L=10mm
20mm
25mm
AMBIENT TEMPERATURE (˚C)
0
100
ZENER CURRENT (mA)
20
Lead
length
0
0
10
PC board
(100×180×1.6t)
20
30
LEAD LENGTH (mm)
PDE-AW01-0
AW01
Lead length = 10 mm
Rth(j - a)
100
∆Vz
IF
Vz
VF
Rth(j - l)
10
150˚C
IAC
1
Note : PC. board mounted
PC. board( 100 × 180 × 1.6t)
Copper foil ( 5.5 )
0.1
0.001
0.01
0.1
TIME (s)
1
10
100
25˚C
TRANSIENT THERMAL IMPEDANCE (˚C/W)
200
Definition of zener characteristics
150˚C
25˚C
Transient thermal impedance
Iz
VAC
∆Vz:Zener voltage change
Vz :Zener voltage (Test current Iz)
Iz :Test current
Zz :Dynamic impedance=VAC / IAC
IF :Forward current
VF :Forward voltage drop
γz :Zener voltage average temperature coefficients
∆Vz
1
=
×
×100
Vz (150-25)
PDE-AW01-0
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
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party or Hitachi, Ltd.
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without the expressed written permission of Hitachi, Ltd.
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