HITACHI ECN3061

ECN3061
4.
Electorical Characteristics (Ta=25°C)
Unless otherwise specified, VCC=15V, VS=141V,
Suffix T; Top arm
B; Bottom arm
No.
Items
Symbols
Terminal
MIN
1 Standby Current
IS
VS1,2
2
ICC
VCC
3 Output device FVD VFT
MU,MV,MW
4
VFB
MU,MV,MW
5 Turn On
TdONT MU,MV,MW
6 Delay Time
TdONB MU,MV,MW
7 Turn Off
TdOFFT MU,MV,MW
8 Delay Time
TdOFFB MU,MV,MW
9 Diode FVD
VFDT
MU,MV,MW
10
VFDB
MU,MV,MW
11 Input Voltage
VIH
UT,VT,WT,
3.5
12
VIL
UB,VB,WB
13 Input Current
IIL
UT,VT,WT,
UB,VB,WB
14 VB supply voltage VB
CB
6.8
15 VB supply current IB
CB
25
Note 1. A pull down resistance is typically 200 kΩ.
TYP
4.0
10
2.0
2.0
0.5
0.5
1.0
0.8
2.0
2.2
-
MAX
10
20
3
3
3.0
3.0
3.0
3.0
2.5
2.7
1.5
100
Unit
mA
mA
V
V
µs
µs
µs
µs
V
V
V
V
µA
7.5
-
8.2
-
V
mA
Condition
UT,VT,WT,UB,VB,
WB=0
I=0.7A
I=0.7A
Resistance load
I=0.7A
Input=5V Note 1
Pull down Resistance
δVLOAD=0.1V
PDE-3061-0
ECN3061
5. Function
5.1
5.2
Truth Table
Terminal
Input
Output
UT,VT,WT,
L
OFF
UB,VB,WB
H
ON
Timing Chart
UT
Top Arm
VT
WT
UB
Bottom Arm VB
WB
MU Output
MV Output
MW Output
PDE-3061-0
ECN3061
6. Standard Application
No.
Component
1 C0
Recommended Value
More than 0.22µF
Usage
for smoothing VB
(VB; internal power supply)
2
C1,C2
3
D1,D2
1.0µF ± 20%
for a charge pump
Remark
The stress voltage is
8V.
The stress voltage is
VCC.
400V/1A
trr≤100ns
Hitachi DFG1C4(glass mold)
for a charge pump
Hitachi DFM1F4(resin mold)
or considerable parts
4 CTR
for an internal clock
Note 1.
1800 pF ± 5%
5 RTR
for an internal clock
Note 1.
22 kΩ ± 5%
Note 1. The internal clock frequency is approximately determined by next equation.
At recommended value of CR, the error factor of IC is about 10%.
fclock = -1 / (2C*R*Ln(1-3.5/5.5))
; Ln is natural logarithm.
= 0.494 / (C*R)
(Hz)
VCC(15V)
D1
D2
+ C1
-
C2
+ CB
C+
C-
CL
VS
VS1
VS2
VB
VCC
VB supply
Charge Pump
Clock
UT
Upper Arm
Driver
VT
WT
Motor
MU
Microprocessor
MV
MW
UB
VB
Lower Arm
Driver
WB
Hall ICs
Pulse Generator
Clock
CR
VTR
GL
GH1
GH1
RTR
CTR
RS
Vref
PDE-3061-0
ECN3061
7.
Terminal
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
MV
VS1
MU
GH1
UT
VT
WT
N.C.
UB
VB
WB
VTR
CR
CB
CL
CC+
GL
VCC
GH2
N.C.
MW
VS2
* N.C. ; No Connection
(Marking Side)
Fig.2 Pin Connection
8.
Package appearance
i)
ii)
ECN3061SP
iii)
ECN3061SPV
ECN3061SPR
PDE-3061-0
ECN3061
9. Package dimensions
i)ECN3061SP
ii)ECN3061SPV
PDE-3061-0
iii)ECN3061SPR
31MAX
(30)
28
±0.3
20
±0.2
3.5 ±0.3
φ3.6
1.26
±0.24
23
±0.25
0.6 ±0.1
1.27
±0.5
2.54
±0.5
2.54
+10°
0°
−0°
0.25 typ
1.8 typ
7.1±0.5
4.9±0.5
23.97±0.3
+10°
0°
−0°
2.2±0.3
(9)
(7.7)
1
1.23
12.3±0.5
3.6
4.1 ±0.3
11.2 ±0.3
14.7MAX
±0.2
0.5 ±0.2
±0.2
±0.5
PDE-3061-0
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
„ For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse