INFINEON BFR183F

BFR183F
NPN Silicon RF Transistor*
• For low noise, high-gain broadband amplifiers at
2
3
collector currents from 2 mA to 30 mA
1
• fT = 8 GHz, F = 0.9 dB at 900 MHz
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR183F
Marking
RHs
1=B
Pin Configuration
2=E
3=C
Package
TSFP-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
65
Base current
IB
5
Total power dissipation1)
Ptot
450
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
T stg
-65 ... 150
V
mA
TS ≤ 62 °C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point 2)
RthJS
≤ 195
K/W
1T
S
is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA please refer to Application Note Thermal Resistance
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BFR183F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
70
100
140
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, I E = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain-
-
IC = 15 mA, VCE = 8 V, pulse measured
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2005-10-14
BFR183F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
6
8
-
Ccb
-
0.34
0.54
Cce
-
0.2
-
Ceb
-
1.1
-
GHz
IC = 25 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0, base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Noise figure
dB
F
IC = 5 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
-
0.9
-
f = 1.8 GHz
-
1.4
-
G ms
-
21
-
dB
G ma
-
14.5
-
dB
Power gain, maximum stableIC = 15 mA
IC = 15 mA, VCE = 8 V, Z S = ZSopt, Z L = ZLopt ,
f = 900 MHz
Power gain, maximum available1)
IC = 15 mA, VCE = 8 V, Z S = ZSopt, Z L = ZLopt ,
f = 1.8 GHz
|S 21e|2
Transducer gain
dB
IC = 15 mA, VCE = 8 V, Z S = ZL = 50 Ω,
f = 900 MHz
-
17
-
f = 1.8 MHz
-
11
-
IP 3
-
26
-
P-1dB
-
10.5
-
Third order intercept point at output2)
dBm
VCE = 8 V, I C = 15 mA, f = 900MHz, ZS=ZL=50 Ω
1dB Compression point3)
IC = 15 mA, VCE = 8 V, f = 900MHz, ZS=ZL=50 Ω
1G
1/2
ma = |S21e / S12e| (k-(k²-1) ), Gms = |S 21 / S12 |
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3DC current at no input power
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2005-10-14
BFR183F
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
1.0345
14.772
1.2149
3.4276
0.85331
1.0112
23.077
22.746
1.8773
1.1967
1.0553
0
3
fA
V
V
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
Ω
fF
ps
mA
V
ns
-
115.98
0.14562
10.016
0.013483
2.5426
1.3435
1.0792
0.36823
0
0.3
0
0
0.54852
A
A
Ω
V
deg
fF
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
0.80799
16.818
0.99543
1.3559
0.43801
0.20486
0.45354
0.50905
460.11
0.053823
0.75
1.11
300
fA
fA
mA
Ω
V
fF
V
eV
K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
C4
C1
L2
B
Transistor
Chip
B'
C'
L3
C
E'
C6
C2
L1
C5
C3
E
L1 =
L2 =
L3 =
C1 =
C2 =
C3 =
C4 =
C5 =
C6 =
0.556
0.675
0.381
43
123
66
10
36
47
nH
nH
nH
fF
fF
fF
fF
fF
fF
Valid up to 6GHz
EHA07524
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
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2005-10-14
Package TSFP-3
BFR183F
Package Outline
0.2 ±0.05
0.55 ±0.04
1
1.2 ±0.05
0.2 ±0.05
3
2
0.2 ±0.05
10˚ MAX.
0.8 ±0.05
1.2 ±0.05
0.15 ±0.05
0.4 ±0.05
0.4 ±0.05
Foot Print
1.05
0.45
0.4
0.4
0.4
Marking Layout
Manufacturer
Type code
Pin 1
BCR847BF
Example
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
1.2
1.5
8
0.3
Pin 1
0.7
1.35
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2005-10-14
BFR183F
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
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2005-10-14