BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR949L3) • Low noise figure: TR1: 1.1dB at 1.8 GHz TR2: 1.5 dB at 1.8 GHz • TR1 with excellent ESD performance typical value > 1500 V (HBM) * Short term description $ 6 4 # 6 4 " ! ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS469L6 Marking Pin Configuration Package AD 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 1 2005-10-11 BFS469L6 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value TR1, TA > 0 °C 4.5 TR1, TA ≤ 0 °C 4.2 TR2, TA > 0 °C 10 TR2, TA ≤ 0 °C 10 Collector-emitter voltage Unit V VCES TR1 15 TR2 20 Collector-base voltage VCBO TR1 15 TR2 20 Emitter-base voltage VEBO TR1 1.5 TR2 1.5 Collector current mA IC TR1 50 TR2 50 2 2005-10-11 BFS469L6 Maximum Ratings Parameter Symbol Base current IB Value mA TR1 5 TR2 5 Total power dissipation1) mW Ptot TR1, TS ≤ 104°C 200 TR2, TS ≤ 100°C 250 Junction temperature °C Tj TR1 150 TR2 150 Ambient temperature Unit TA TR1 -65 ... 150 TR2 -65 ... 150 Storage temperature T stg TR1 -65 ... 150 TR2 -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point 2) RthJS Value Unit K/W TR1 ≤ 230 TR2 ≤ 200 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 3 2005-10-11 BFS469L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO TR1, IC = 1 mA, IB = 0 4.5 5.8 - TR2, IC = 1 mA, IB = 0 10 16 - Collector-emitter cutoff current µA I CES TR1, V CE = 15 V , VBE = 0 - - 10 TR1, V CE = 20 V, V BE = 0 - - 10 Collector-base cutoff current nA I CBO TR1, V CB = 5 V, IE = 0 - - 100 TR2, V CB = 10 V, IE = 0 - - 100 Emitter-base cutoff current µA I EBO TR1, V EB = 0,5 V, IC = 0 - - 1 TR2, V EB = 1 V, I C = 0 - - 0.1 DC current gain- - hFE TR1, IC = 20 mA, VCE = 3 V, pulse measured 90 120 160 TR2, IC = 5 mA, V CE = 6 V, pulse measured 100 140 180 4 2005-10-11 BFS469L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. AC Characteristics (verified by random sampling) Transition frequency GHz fT TR1, IC = 30 mA, VCE = 3 V, f = 1 GHz 16 22 - TR2, IC = 15 mA, VCE = 6 V, f = 1 GHz 7 9 - Collector-base capacitance pF Ccb TR1, V CB = 3 V, f = 1 MHz, VBE = 0 , - emitter grounded - 0.29 0.45 0.25 0.45 TR2, V CB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance Cce TR1, V CE = 3 V, f = 1 MHz, VBE = 0 , - base grounded - 0.14 - TR2, V CE = 10 V, f = 1 MHz, VBE = 0 , 0.14 base grounded Emitter-base capacitance Ceb TR1, V EB = 0,5 V, f = 1 MHz, V CB = 0 , - collector grounded - 0.55 - TR2, V EB = 0,5 V, f = 1 MHz, V CB = 0 , 0.7 collector grounded 5 2005-10-11 BFS469L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Noise figure F TR1, IC=5mA, V CE = 3 V, f = 1.8 GHz, ZS = ZSopt - 1.1 - TR1, IC=5mA, V CE = 3 V, f = 3 GHz, ZS = ZSopt - 1.4 - TR2, IC=3mA, V CE = 6 V, f = 1 GHz, ZS = ZSopt - 1 - TR2, IC=3mA, V CE = 8 V, f = 1.8 GHz, ZS = ZSopt - 1.3 - TR1, IC = 20 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 1.8 GHz - 17 - TR2, IC = 10 mA, V CE = 8 V, ZS=ZSopt, Z L=ZLopt, f = 0.9 GHz - 21.5 - TR2, IC = 10 mA, V CE = 8 V, ZS=ZSopt, Z L=ZLopt, f = 1.8 GHz - 15.5 - - 12 - TR1, IC=20mA, V CE = 3 V, ZS=ZL=50Ω, f=1.8GHz - 14.5 - TR1, IC=20mA, V CE = 3 V, ZS=ZL=50Ω, f=3GHz - 10 - TR2, IC=15mA, V CE = 6 V, ZS=ZL=50Ω, f=1GHz - 16.5 - TR2, IC=10mA, V CE = 8 V, ZS=ZL=50Ω, f=1.8GHz - 11.5 - Power gain, maximum stable 1) Unit dB G ms Power gain, maximum available 1) G ma TR1, IC = 20mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1,8 GHz |S 21e|2 Transducer gain Third order intercept point at output 2) dBm IP 3 TR1, V CE=3V, IC=20mA, ZS=ZL=50Ω, f=1.8GHz - 28 - TR2, V CE=8V, IC=10mA, ZS=ZL=50Ω, f=1.8GHz - 24.5 - TR1, IC=20mA, V CE=3V, ZS=ZL=50Ω, f=1.8GHz - 12 - TR1, IC=10mA, V CE=8V, ZS=ZL=50Ω, f=1.8GHz - 6 - 1dB Compression point at output P -1dB 1G 1/2 ma = |S21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 6 2005-10-11 Package TSLP-6-1 BFS469L6 Package Outline Bottom view 0.05 MAX. 5 6 0.87 ±0.05 4 3 2 1 0.8 ±0.05 0.45±0.05 3 4 2 5 0.55 ±0.05 6 1 2 x 0.35 ±0.035 1) Pin 1 marking 12 ±0.05 +0.1 4 x 0.15 ±0.035 1) 4 x 0.23 ±0.035 1) 0.4 2 x 0.23 ±0.035 1) Top view 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.8 0.25 0.25 0.25 0.185 1.12 1.12 0.37 0.25 0.29 0.25 0.25 0.22 0.18 Copper R0.125 0.76 0.185 0.8 Only 100 µm stencil thickness recommended Stencil apertures Solder mask Marking Layout Type code BFS360L6 Laser marking Pin 1 marking Example Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 0.5 Pin 1 marking 8 1.45 4 1.05 7 2005-10-11 BFS469L6 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2005-10-11