MITSUBISHI MGF4934AM

July/2007
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4934AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
DESCRIPTION
Outline Drawing
The MGF4934AM super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.55dB (Typ.)
Fig.1
High associated gain
@ f=12GHz
Gs = 12.5dB (Typ.)
MITSUBISHI Proprietary
APPLICATION
S to Ku band low noise amplifiers
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel
3000pcs/reel
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
Parameter
Gate to drain voltage
Gate to source voltage
Ratings
Unit
-4
V
-4
V
mA
Total power dissipation
50
mW
Channel temperature
125
°C
-55 to +125
°C
Drain current
PT
Tch
Tstg
Storage temperature
ELECTRICAL CHARACTERISTICS
V(BR)GDO
(Ta=25°C )
IDSS
ID
Symbol
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making
semiconductor products better and more reliable , but there is always the
possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury , fire or property damage. Remember to give due
consideration to safety when making your circuit designs , with appropriate
measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Parameter
(Ta=25°C )
Test conditions
Limits
Unit
MIN.
TYP.
MAX
-3.5
--
--
V
--
--
50
µA
mA
Gate to drain breakdown voltage
IG=-10µA
IGSS
Gate to source leakage current
VGS=-2V,VDS=0V
IDSS
Saturated drain current
VGS=0V,VDS=2V
12
--
60
Gate to source cut-off voltage
VDS=2V,ID=500µA
-0.1
--
-1.5
V
Associated gain
VDS=2V,
11.5
12.5
--
dB
Minimum noise figure
ID=10mA,f=12GHz
--
0.55
0.80
dB
VGS(off)
Gs
NFmin.
MITSUBISHI
(1/6)
July/2007
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4934AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
Fig.1
2.10 ±0.1
1.30 ±0.05
(0.65) (0.65)
0.30
+0.1
-0.05
+0.1
0.30 -0.05
①
±0.1
±0.1
1.25
Top
2.05
②
B c
②
③
0.40
+0.05
+0.1
0.30 -0.05
+0.1
-0.05
0.11 -0
(0.60) (0.65)
0.49 ±0.05
1.25 ±0.05
Side
③
②
Unit: mm
(0.85)
Bottom
②
① Gate
② Source
③ Drain
①
(GD-30)
MITSUBISHI
(2/6)
July/2007
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4934AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
TYPICAL CHARACTERISTICS
(Ta=25°C)
ID vs. VDS
ID vs. VGS
(VDS=2V)
50
40
40
Drain Current, I D(mA)
Drain Current, I D(mA)
(VGS=~0.1V/STEP)
50
30
20
10
30
20
10
0
0
1
2
3
0
-1.0
4
Drain to Source voltage, VDS(V)
-0.5
Gate to Souce voltage, VGS(V)
NF & Gs vs. ID
2.20
15
Ta=25℃
VDS=2V
f=12GHz
1.80
14
13
Gs
1.60
12
1.40
11
1.20
10
1.00
9
0.80
8
NF
0.60
7
0.40
6
0.20
5
0.00
Associated Gain, Gs (dB)
Noise Figure, NF (dB)
2.00
4
0
5
10
15
20
Drain Current, ID (mA)
MITSUBISHI
(3/6)
0.0
July/2007
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4934AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
S PARAMETERS
(VDS=2V,ID=10mA,Ta=room temperature)
Noise Parameter
S11
(mag)
(ang)
0.986
-14.0
0.961
-27.8
0.918
-41.9
0.863
-59.4
0.808
-72.1
0.748
-85.2
0.683
-98.1
0.613 -111.9
0.543 -126.8
0.474 -142.9
0.421 -160.9
0.395
177.9
0.395
154.9
0.433
132.9
0.491
114.0
0.559
97.5
0.630
83.0
0.692
70.3
0.739
60.2
0.787
52.4
0.828
45.4
0.866
39.4
0.894
33.7
0.921
26.1
0.937
16.9
0.936
5.9
S21
(mag)
(ang)
4.534
163.6
4.478
148.2
4.394
132.8
4.523
116.2
4.309
102.2
4.148
88.6
4.015
75.1
3.860
61.9
3.744
49.0
3.644
35.8
3.552
22.8
3.488
9.6
3.396
-4.0
3.295
-17.6
3.183
-31.5
3.056
-45.9
2.886
-60.6
2.662
-74.9
2.401
-87.7
2.198
-98.5
2.060 -109.9
1.940 -120.6
1.810 -131.4
1.710 -142.1
1.632 -152.9
1.541 -165.3
S12
(mag)
(ang)
0.014
79.1
0.027
70.5
0.038
61.9
0.052
50.3
0.060
43.3
0.067
36.9
0.073
30.5
0.078
25.3
0.082
20.9
0.087
17.1
0.092
14.0
0.100
11.1
0.111
7.6
0.122
2.2
0.133
-4.2
0.144
-11.1
0.154
-18.6
0.161
-26.6
0.169
-34.2
0.174
-42.1
0.179
-50.4
0.180
-58.5
0.183
-65.4
0.184
-71.5
0.187
-78.0
0.186
-86.0
S22
(mag)
0.676
0.663
0.638
0.580
0.559
0.530
0.496
0.454
0.411
0.364
0.321
0.278
0.239
0.214
0.219
0.256
0.315
0.379
0.440
0.484
0.527
0.575
0.632
0.695
0.770
0.846
(ang)
-11.0
-22.3
-32.7
-45.1
-53.8
-62.2
-70.0
-76.5
-83.1
-91.0
-100.6
-114.7
-133.9
-159.5
170.8
144.4
122.4
104.1
88.4
73.6
60.5
47.9
35.7
25.4
16.7
8.8
(VDS=2V,ID=10mA, Ta=room temperature))
Γopt
f
(GHz)
Magn.
12
0.326
Rn
NFmin
Angle(deg.)
(Ω)
(dB)
162.2
3.0
0.56
Reference point
Reference point
Gate
Drain
0.96
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
Board: εr=2.6
45゚
Thickness: 0.4mm
(4-φ0.4: through-hole)
MITSUBISHI
(4/6)
2.5mm
July/2007
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4934AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
S PARAMETERS
(VDS=0V,VGS=0V,Ta=room temperature)
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
S11
(mag)
(ang)
0.995
-12.5
0.990
-24.6
0.991
-37.5
0.983
-53.3
0.976
-67.1
0.961
-81.0
0.951
-95.7
0.940
-112.3
0.913
-130.9
0.902
-151.8
0.887
-175.9
0.883
159.0
0.884
134.4
0.889
112.1
0.896
93.6
0.907
78.5
0.911
66.4
0.919
55.9
0.924
47.1
0.919
38.7
0.921
31.2
0.924
24.3
0.928
18.1
0.950
11.6
0.970
5.4
0.978
-1.5
S21
(mag)
(ang)
0.008
96.4
0.018
100.5
0.032
99.5
0.051
92.5
0.074
85.0
0.099
76.0
0.130
65.5
0.163
53.6
0.196
41.0
0.229
27.1
0.256
12.0
0.274
-2.5
0.276
-16.9
0.268
-30.5
0.257
-42.0
0.241
-51.5
0.228
-59.6
0.221
-67.5
0.217
-76.6
0.204
-87.1
0.192
-95.0
0.179
-103.1
0.168
-110.3
0.159
-116.7
0.149
-122.1
0.141
-128.2
S12
(mag)
(ang)
0.008
97.7
0.018
100.7
0.032
98.9
0.051
94.0
0.075
85.5
0.100
76.5
0.131
65.3
0.163
54.3
0.198
41.3
0.230
27.3
0.257
12.7
0.273
-2.7
0.278
-17.2
0.270
-30.2
0.256
-42.0
0.241
-51.1
0.227
-59.8
0.221
-67.4
0.218
-76.5
0.204
-86.9
0.193
-95.3
0.179
-103.2
0.168
-110.6
0.157
-116.3
0.150
-122.1
0.141
-128.3
S22
(mag)
0.673
0.673
0.671
0.694
0.697
0.704
0.719
0.730
0.745
0.759
0.774
0.783
0.794
0.800
0.807
0.811
0.807
0.815
0.817
0.814
0.810
0.811
0.817
0.816
0.830
0.844
(ang)
165.1
152.1
138.7
127.4
112.5
97.6
83.4
70.8
59.2
49.3
41.2
34.8
29.2
24.0
18.7
13.2
7.1
0.6
-6.9
-14.8
-23.2
-31.2
-39.2
-46.5
-53.8
-61.8
(VDS=0V,VGS=-2.5V,Ta=room temperature)
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
S11
(mag)
(ang)
0.993
-9.6
0.996
-18.9
0.992
-28.3
0.987
-39.7
0.981
-49.5
0.975
-59.1
0.968
-68.8
0.963
-79.2
0.949
-89.9
0.943
-102.2
0.932
-117.2
0.929
-134.6
0.932
-155.8
0.938
-179.2
0.940
156.2
0.948
133.1
0.951
112.7
0.952
95.4
0.956
80.9
0.951
68.1
0.953
57.2
0.946
47.5
0.950
38.8
0.965
30.8
0.982
23.3
0.993
15.4
S21
(mag)
(ang)
0.022
78.7
0.044
68.6
0.065
59.8
0.092
48.4
0.112
38.8
0.131
28.8
0.150
19.2
0.169
7.7
0.185
-4.5
0.200
-18.4
0.209
-34.7
0.207
-52.4
0.187
-73.4
0.148
-96.3
0.091
-119.2
0.033
-137.6
0.018
9.9
0.058
0.6
0.091
-11.2
0.117
-24.5
0.138
-37.5
0.150
-49.7
0.157
-60.4
0.161
-69.7
0.162
-77.8
0.163
-85.8
S12
(mag)
(ang)
0.022
79.0
0.044
68.8
0.065
59.2
0.092
48.4
0.112
38.8
0.130
29.1
0.150
19.2
0.168
8.0
0.186
-4.3
0.200
-18.5
0.209
-34.4
0.207
-52.8
0.188
-73.6
0.149
-96.7
0.091
-119.3
0.034
-136.8
0.018
9.0
0.058
0.5
0.090
-11.3
0.118
-24.3
0.137
-37.3
0.150
-49.6
0.157
-60.2
0.161
-70.1
0.162
-77.6
0.163
-85.8
MITSUBISHI
(5/6)
S22
(mag)
0.998
1.000
0.991
0.984
0.986
0.980
0.975
0.968
0.959
0.949
0.943
0.932
0.928
0.942
0.947
0.953
0.957
0.965
0.964
0.960
0.954
0.947
0.952
0.963
0.981
0.995
(ang)
-10.6
-21.3
-31.2
-42.1
-51.5
-60.6
-70.1
-80.7
-92.1
-105.6
-121.1
-139.6
-160.7
176.8
153.6
132.4
112.9
94.8
79.2
64.6
50.5
37.4
24.9
13.3
1.6
-10.3
July/2007
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4934AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts,
however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems.
In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design,
malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products
from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of
safety in the products when in use by customers.
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rights owned by Mitsubishi Electric Corporation.
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programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the
rights of third-party owners resulting from such use.
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MITSUBISHI
(6/6)