MITSUBISHI MGF1451A

Dec./2006
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF1451A
Low Noise MES FET
DESCRIPTION
Outline Drawing
The MGF1451A is designed for use in S to Ku band power
amplifiers.
FEATURES
High gain and High P1dB
Glp=10.5dB , P1dB=13dBm (Typ.) @ f=12GHz
APPLICATION
S to Ku band power Amplifiers
QUALITY GRADE
IG
Keep Safety first in your circuit designs!
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
(Ta=25°C )
Parameter
Ratings
Unit
Gate to drain voltage
-8
V
Gate to source voltage
-8
V
120
mA
ID
Drain current
PT
Tch
Total power dissipation
300
mW
Channel temperature
175
°C
Tstg
Storage temperature
-55 to +175
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C )
Synbol
V(BR)GDO
V(BR)GSO
IGSS
Parameter
Gate to drain breakdown voltage
Gate to source breakdown voltage
Gate to source leakage current
IDSS
Saturated drain current
VGS(off)
Gate to source cut-off voltage
Glp
Linear Power Gain
P1dB
Output Power at 1dB gain
Compression
Thermal Resistance
Rt.
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Test conditions
IG=-30μA
IG=-30μA
VGS=-3V
VDS=0V
VGS=0V
VDS=3V
VDS=3V
ID=300μA
VDS=3V
ID=30mA
f=12GHz
MIN.
-8
-8
--
Limits
TYP.
----
MAX
--10
Unit
V
V
uA
35
60
120
mA
-0.3
-1.4
-3.5
V
9.0
10.5
--
dB
11.0
13.0
--
dBm
--
--
--
420
℃/W
MITSUBISHI
(1/4)
Decl/2006
Dec./2006
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF1451A
Low Noise MES FET
TYPICAL CHARACTERISTICS
ID vs. VDS
80
ID VS. VDS
80
Ta=25℃
VGS=-0.2V/STEP
70
Ta=25℃
VDS=3V
70
VGS=0V
60
DRAIN CURRENT ID(mA)
DRAIN CURRENT ID(mA)
(Ta=25°C)
50
40
30
20
10
0
60
50
40
30
20
10
0
0
1
2
3
4
5
DRAIN TO SOURCE VOLTAGE VDS(V)
-2.0
-1.0
0.0
GATE TO SOURCE VOLTAGE VGS(V)
Pout,Glp vs. Pin
25
30
Pout(dBm)
20
25
15
20
10
15
5
10
0
-10.0
-5.0
0.0
Pin(dBm)
5.0
Glp(dB)
f=12GHz
VDS=3V
IDS=30mA
Pout
Glp
5
10.0
MITSUBISHI
(2/4)
Decl/2006
Dec./2006
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF1451A
Low Noise MES FET
S PARAMETERS
(Conditions:VDS=3V,IDS=30mA,Ta=25deg.C)
freq
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
S11
Mag.
0.986
0.953
0.921
0.886
0.850
0.810
0.784
0.748
0.714
0.667
0.606
0.521
0.447
0.386
0.382
0.460
0.578
0.688
0.767
0.794
S21
Angle
-21.3
-41.0
-58.6
-74.3
-90.2
-101.0
-111.5
-121.3
-131.5
-143.9
-157.3
-173.0
165.7
134.3
95.5
57.9
29.8
8.2
-8.0
-20.5
Mag.
4.089
3.848
3.570
3.274
3.054
2.823
2.686
2.588
2.542
2.541
2.562
2.586
2.653
2.686
2.674
2.619
2.445
2.224
1.979
1.736
S12
Angle
159.6
140.9
124.1
109.1
93.5
80.9
68.9
57.3
45.4
33.2
19.6
5.6
-9.6
-26.7
-45.2
-65.5
-86.0
-106.6
-126.1
-145.0
Mag.
0.016
0.029
0.039
0.046
0.052
0.054
0.055
0.055
0.057
0.062
0.067
0.069
0.073
0.076
0.078
0.080
0.080
0.077
0.075
0.077
S22
Angle
75.2
61.4
50.8
41.7
31.2
24.8
19.3
15.5
13.5
11.2
4.4
-4.9
-13.3
-23.5
-37.5
-54.5
-73.9
-95.0
-117.1
-140.2
Mag.
0.542
0.544
0.542
0.539
0.528
0.531
0.541
0.547
0.552
0.560
0.556
0.544
0.526
0.496
0.451
0.379
0.282
0.169
0.060
0.083
K
Angle
-15.9
-31.0
-43.3
-52.9
-64.5
-72.5
-79.2
-85.4
-91.2
-96.6
-103.4
-109.9
-117.9
-125.7
-135.0
-144.3
-154.0
-157.6
-138.7
-42.8
0.17
0.30
0.40
0.51
0.64
0.82
0.93
1.08
1.17
1.18
1.27
1.46
1.52
1.58
1.60
1.57
1.54
1.51
1.46
1.48
MSG/MAG
(dB)
24.1
21.2
19.6
18.5
17.7
17.2
16.9
14.9
14.0
13.5
12.7
11.7
11.4
11.0
10.8
10.7
10.5
10.4
10.2
9.4
GaAs FET
Bottom view (MGF1451A)
①
Calibration point
Gate
1.0mm
Microstrip line (Z0=50Ω)
Drain
GND
Calibration point
Substrate (Ceramics)
εr=9.8
MetalM
carrier
etal carrier
Calibration point
②
②
③
①Gate
②Source
③Drain
Calibration point
1.1mm
MITSUBISHI
(3/4)
Decl/2006
Dec./2006
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF1451A
Low Noise MES FET
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however,
there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of
this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction
prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting
in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the
products when in use by customers.
Matters of Importance when Using these Materials
1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric
semiconductors best suited to their specific use applications. Please be aware, however, that the technical information
contained in these materials does not comprise consent for the execution or use of intellectual property rights or other
rights owned by Mitsubishi Electric Corporation.
2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts,
programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights
of third-party owners resulting from such use.
3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at
the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in
the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric
semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an
authorized dealer.
4. Every possible effort has been made to ensure that the information described in these materials is fully accurate.
However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these
materials.
5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in
these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather,
it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full
responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the
propriety of application.
6. The products described in these materials, with the exception of special mention concerning use and reliability, have
been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products
have not been designed and manufactured with the purpose of application in machinery or systems that will be used
under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a
particularly high degree of reliability. When considering the use of the products described in these materials in
transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear
power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric
directly or an authorized dealer.
7. When considering use of products for purposes other than the specific applications described in these materials,
please inquire at Mitsubishi Electric or an authorized dealer.
8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials.
9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to
Mitsubishi Electric or an authorized dealer.
MITSUBISHI
(4/4)
Decl/2006