May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4935AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION Outline Drawing The MGF4935AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. FEATURES Low noise figure @ f=12GHz NFmin. = 0.45dB (Typ.) Fig.1 High associated gain @ f=12GHz Gs = 12.0dB (Typ.) MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric APPLICATION S to Ku band low noise amplifiers QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA ORDERING INFORMATION Tape & reel 3000pcs/reel ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID Parameter Gate to drain voltage Gate to source voltage Drain current Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. (Ta=25°C ) Ratings Unit -3 V -3 V IDSS mA PT Tch Total power dissipation 50 mW Channel temperature 125 °C Tstg Storage temperature -55 to +125 °C ELECTRICAL CHARACTERISTICS Symbol Parameter (Ta=25°C ) Test conditions Limits MIN. V(BR)GDO TYP. Unit MAX Gate to drain breakdown voltage IG=-10µA IGSS Gate to source leakage current VGS=-2V,VDS=0V IDSS Saturated drain current VGS=0V,VDS=2V 12 Gate to source cut-off voltage VDS=2V,ID=500µA -0.1 Associated gain VDS=2V, 11.0 12.0 -- dB Minimum noise figure ID=10mA,f=12GHz -- 0.45 0.65 dB VGS(off) Gs NFmin. MITSUBISHI (1/6) -3.5 -- -- V -- -- 50 µA -- 60 mA -- -1.5 V May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4935AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Fig.1 2.10 ±0.1 1.30 ±0.05 (0.65) (0.65) ±0.1 ±0.1 1.25 Top 2.05 0.30 +0.1 -0.05 0.40 +0.1 0.30 -0.05 ② ① ③ ② +0.05 +0.1 0.30 -0.05 +0.1 -0.05 0.11 -0 (0.60) (0.65) 0.49 ±0.05 1.25 ±0.05 Side ③ ② Unit: mm (0.85) Bottom ② ① Gate ② Source ③ Drain ① (GD-30) MITSUBISHI (2/6) May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4935AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. VDS (VGS=~0.1V/STEP) 50 40 30 20 10 0 0 1 2 3 40 30 20 10 0 -1.0 4 Drain to Source voltage, VDS(V) 1.6 14 13 12 Gs 1.4 11 1.2 10 1.0 9 0.8 8 0.6 7 NF 0.4 6 0.2 5 0.0 4 0 5 10 15 Associated Gain, Gs (dB) 1.8 Noise Figure, NF (dB) 15 Ta=25℃ V DS=2V f=12GHz 2.0 -0.5 Gate to Souce voltage, VGS(V) NF & Gs vs. ID 2.2 (VDS=2V) 50 Drain Current, I D(mA) Drain Current, I D(mA) ID vs. VGS 20 Drain current, ID (mA) MITSUBISHI (3/6) 0.0 May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4935AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) S PARAMETERS (VDS=2V,ID=10mA,Ta=room temperature) S11 (mag) (ang) 0.990 -13.4 0.964 -26.9 0.923 -40.6 0.866 -54.5 0.804 -68.1 0.734 -82.3 0.659 -96.5 0.582 -111.0 0.507 -126.1 0.438 -142.0 0.381 -158.6 0.340 -178.7 0.319 158.0 0.327 133.9 0.370 112.0 0.440 93.2 0.520 78.4 0.601 64.0 0.672 50.4 0.737 38.9 0.800 30.7 0.847 27.2 0.886 25.8 0.920 23.1 0.948 16.5 0.954 3.1 Noise Parameter Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 S21 (mag) (ang) 4.592 164.5 4.545 149.2 4.476 134.3 4.463 119.5 4.370 105.1 4.241 91.0 4.113 77.4 3.965 64.0 3.804 51.4 3.660 38.9 3.548 26.9 3.440 14.7 3.355 2.2 3.276 -10.8 3.191 -24.0 3.080 -37.9 2.914 -51.9 2.690 -66.0 2.405 -78.6 2.146 -88.9 1.931 -99.1 1.738 -108.8 1.574 -118.1 1.459 -127.4 1.382 -137.6 1.332 -150.9 S12 (mag) (ang) 0.013 80.2 0.027 71.6 0.039 62.7 0.051 54.6 0.061 46.8 0.069 39.3 0.076 33.2 0.082 28.2 0.086 24.0 0.091 20.9 0.097 19.0 0.106 16.9 0.118 13.2 0.131 8.5 0.146 2.8 0.159 -4.2 0.173 -11.5 0.183 -19.4 0.190 -27.1 0.195 -34.2 0.197 -42.0 0.196 -49.0 0.195 -55.9 0.193 -61.4 0.202 -67.4 0.213 -77.2 S22 (mag) 0.669 0.658 0.636 0.603 0.569 0.529 0.488 0.446 0.404 0.368 0.338 0.320 0.303 0.300 0.307 0.327 0.369 0.419 0.472 0.510 0.548 0.582 0.619 0.652 0.693 0.730 (ang) -10.6 -21.3 -31.2 -41.8 -51.7 -61.1 -69.7 -77.6 -84.9 -91.9 -99.5 -109.4 -120.9 -137.1 -157.2 179.4 157.8 137.5 122.4 110.5 98.5 83.9 68.2 52.9 40.5 31.4 (VDS=2V,ID=10mA, Ta=room temperature) NFmin Rn Γopt (dB) (mag) (ang) (Ω) 0.20 0.99 3.1 18.0 0.20 0.98 8.3 16.5 0.21 0.98 14.9 15.0 0.22 0.97 20.4 13.5 0.24 0.95 30.4 12.0 0.26 0.90 41.5 10.5 0.29 0.83 52.7 9.0 0.31 0.71 68.0 7.0 0.34 0.60 83.3 5.5 0.37 0.50 99.7 4.0 0.40 0.41 117.8 3.0 0.44 0.33 137.8 2.5 0.47 0.27 162.0 2.5 0.51 0.24 -178.1 2.5 Note ; Rn is normalized by 50 ohm. Reference point Reference point Gate Drain 0.96 Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 45ﾟ 2.5mm Board: εr=2.6 Thickness: 0.4mm (4-φ0.4: through-hole) MITSUBISHI (4/6) May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4935AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) S PARAMETERS (VDS=0V,VGS=0V,Ta=room temperature) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 (mag) (ang) 0.999 -11.6 0.996 -24.0 0.990 -36.5 0.988 -50.0 0.981 -64.3 0.972 -79.2 0.958 -95.5 0.944 -113.8 0.918 -133.8 0.896 -155.7 0.881 -179.8 0.865 154.3 0.863 127.9 0.873 103.1 0.885 82.6 0.901 66.1 0.912 52.7 0.922 40.6 0.926 28.9 0.933 19.0 0.941 12.3 0.942 10.5 0.943 10.3 0.958 9.3 0.970 3.2 0.951 -10.3 S21 (mag) (ang) 0.008 97.0 0.018 98.4 0.032 97.9 0.050 94.7 0.073 87.6 0.099 79.4 0.130 69.2 0.165 58.0 0.200 45.6 0.235 32.2 0.269 17.4 0.292 2.2 0.306 -13.3 0.306 -28.4 0.294 -41.6 0.280 -52.6 0.264 -61.5 0.252 -69.0 0.242 -76.7 0.224 -84.1 0.210 -89.8 0.193 -94.8 0.176 -100.3 0.163 -103.8 0.158 -109.2 0.151 -117.4 S12 (mag) (ang) 0.008 96.6 0.018 100.0 0.032 98.7 0.050 94.7 0.074 87.8 0.100 79.7 0.130 69.1 0.165 58.2 0.200 45.8 0.237 32.2 0.269 17.5 0.294 2.2 0.307 -13.6 0.307 -28.4 0.295 -41.5 0.280 -52.5 0.265 -61.5 0.252 -69.0 0.242 -76.8 0.225 -83.9 0.210 -89.2 0.193 -94.7 0.175 -100.9 0.163 -103.9 0.157 -109.0 0.149 -118.2 S22 (mag) 0.648 0.648 0.652 0.664 0.674 0.682 0.693 0.706 0.717 0.725 0.732 0.739 0.747 0.751 0.755 0.764 0.768 0.778 0.784 0.777 0.761 0.749 0.743 0.755 0.781 0.789 (ang) 168.2 156.5 144.6 133.1 121.4 109.6 97.9 87.1 76.9 67.5 59.1 51.4 44.3 36.9 29.4 22.4 16.4 12.5 11.1 10.0 6.6 -0.3 -9.5 -19.4 -28.9 -36.1 S12 (mag) (ang) 0.023 79.7 0.045 70.6 0.068 61.1 0.092 50.6 0.116 40.9 0.139 30.6 0.162 19.8 0.185 8.1 0.202 -4.2 0.216 -17.8 0.220 -32.3 0.218 -47.8 0.201 -65.7 0.169 -85.7 0.119 -107.2 0.057 -127.6 0.005 -27.7 0.050 7.1 0.086 -4.4 0.115 -16.8 0.132 -28.8 0.143 -39.8 0.147 -49.5 0.149 -57.0 0.159 -64.7 0.168 -75.4 S22 (mag) 0.997 0.995 0.993 0.987 0.980 0.979 0.974 0.966 0.957 0.950 0.942 0.942 0.934 0.941 0.945 0.954 0.963 0.970 0.978 0.976 0.961 0.951 0.941 0.953 0.974 0.990 (ang) -9.9 -19.8 -29.2 -39.0 -49.4 -59.2 -69.1 -79.5 -89.9 -101.6 -114.0 -127.8 -143.2 -161.1 179.1 158.6 139.9 123.7 112.1 101.9 90.3 76.5 61.2 46.5 33.8 24.2 (VDS=0V,VGS=-2V,Ta=room temperature) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 (mag) (ang) 0.997 -9.0 0.997 -18.1 0.997 -27.7 0.993 -37.3 0.988 -47.1 0.985 -57.4 0.972 -68.0 0.973 -79.2 0.956 -91.8 0.942 -104.7 0.938 -119.1 0.934 -136.1 0.928 -156.1 0.935 -178.9 0.939 155.9 0.943 130.2 0.949 105.8 0.952 83.3 0.957 63.4 0.963 46.8 0.972 35.0 0.970 29.8 0.967 27.0 0.974 24.0 0.983 17.1 0.960 2.8 S21 (mag) (ang) 0.022 81.0 0.045 70.6 0.068 60.4 0.092 50.9 0.116 40.8 0.139 30.9 0.162 19.9 0.184 8.1 0.201 -4.1 0.216 -17.7 0.221 -32.2 0.217 -47.7 0.201 -65.7 0.170 -85.7 0.119 -107.4 0.057 -127.3 0.005 -25.0 0.051 6.5 0.086 -4.4 0.115 -16.6 0.133 -29.5 0.143 -40.0 0.145 -49.6 0.149 -56.9 0.159 -64.6 0.168 -75.8 MITSUBISHI (5/6) May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4935AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. 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