MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK30V4045 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTL INE D RA W ING Unit : millimeters 11.0 +/-0.3 (1 ) 2MIN 0.5 +/-0.15 (2 ) 6.5 +/-0.2 (2 ) 2MIN 2R-0.9 5.1 FEATURES ¶Internally impedance matched ¶Flip-chip mounted ¶High output power P1dB = 1.1W(TYP.) @f=14.0-14.5GHz ¶High linear power gain GLP = 8.0dB(TYP.) í @f=14.0-14.5GHz ¶High power added efficiency íí íP.A.E.ý24æèTYP.)íí@f=14.0-14.5GHz (3 ) 6.2+/-0.2 APPLICATION ¶For use in 14.0-14.5GHz band amplifiers 9.2 +/-0.2 QUALITY GRADE RECOMMENDED BIAS CONDITIONS VDS =8 (V) ID =350 (mA) Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Reverse gate current IGF Forward gate current PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=25deg.C 0.6 2.4 +/-0.4 0.1 1.3 +/-0.2 ¶IG 9.0 (Ta=25deg.C) Ratings -15 -15 1000 -3 5 11 175 -65 / +175 (1 ) G AT E (2 ) S O U R C E (F L AN G E ) (3 ) D R AIN GF -11 Unit V V Ä Ä Ä W deg.C deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol IDSS VGS(off) gm P1dB GLP P.A.E. Parameter (Ta=25deg.C) Test conditions Limits Typ. Max. 800 1000 Unit Saturated drain current VDS=3V,VGS=0V Min. - Gate to source cut-off voltage VDS=3V,ID=2mA -2 - -5 V Transconductance VDS=3V,ID=350mA - 300 - mS 29.5 31 - dBm 7.0 8.0 - dB - 24 - % - - 20 deg.C/W Output power at 1dB gain compression Linear power gain VDS=10V, ID(RF off)=350mA, f=14.0 - 14.5GHz Power added efficiency Rth (Ch-C) Thermal resistance *1 Delta Vf method mA *1 : Channel to case MITSUBISHI ELECTRIC Jul-'05 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK30V4045 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC Jul/'05