MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package 4.0±0.2 assures minimumu parasitic losses, and has a configuration suitable for 1.85±0.2 microstrip circuits. 1 The MGF491*G series is mounted in the super 12 tape. 0.5±0.15 FEATURES 2 • Low noise figure 2 @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) 0.5±0.15 MGF4919G:NFmin.=0.50dB(MAX.) • High associated gain @f=12GHz 3 Gs=12.0dB(MIN.) ø1.8±0.2 APPLICATION L to Ku band low noise amplifiers. QUALITY GRADE • GG 1 GATE 2 SOURCE RECOMMENDED BIAS CONDITIONS 3 DRAIN • VDS=2V,ID=10mA GD-16 • Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature Ratings -4 -4 60 50 125 -65 to +125 Unit V V mA mW ˚C ˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol Parameter V(BR)GDO IGSS IDSS VGs(off) gm GS Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage NFmin. Transconductance Associated gain Minimum noise figure Test conditions IG=-10µA VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500µA VDS=2V,ID=10mA VDS=2V,ID=10mA f=12GHz MGF4916G MGF4919G Min -3 – 15 -0.1 – 12.0 – – Limits Typ – – – – 75 13.5 – – Max – 50 60 -1.5 – – 0.80 0.50 Unit V µA mA V mS dB dB dB Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT TYPICAL CHARACTERISTICS (Ta=25˚C) ID vs. VGS ID vs. VDS 50 60 Ta=25˚C VDS=2V Ta=25˚C VGS=-0.1V/STEP 50 40 VGS=0V 40 30 30 20 20 10 10 0 -1.0 0 -0.5 0 GATE TO SOURCE VOLTAGE VGS(V) 0 1 2 3 4 5 DRAIN TO SOURCE VOLTAGE VDS(V) NF & Gs vs. ID (MGF4919G) 16 Ta=25˚C VDS=2V f=12GHz 14 GS 12 10 0.9 0.8 8 0.7 0.6 NF 0.5 0.4 0.3 0 5 10 15 20 25 DRAIN CURRENT ID (mA) Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT S PARAMETERS Freq. (GHz) (Ta=25˚C,VDS=2V,ID=10mA) S11 S21 S12 S22 Angle -22.3 -40.6 -53.2 -70.9 -88.8 -105.7 -120.6 -132.1 Mag. 5.775 5.585 5.401 5.161 4.899 4.626 4.316 4.100 Angle 158.1 140.6 128.9 111.8 96.8 80.8 67.9 56.4 Mag. 0.020 0.035 0.051 0.064 0.075 0.083 0.087 0.090 Angle 71.9 61.8 53.3 42.4 29.3 19.0 9.1 4.1 Mag. 0.533 0.514 0.489 0.457 0.424 0.391 0.369 0.357 Angle -19.2 -33.4 -42.9 -58.2 -71.6 -87.5 -100.6 -110.8 K MSG/MAG (dB) 1 2 3 4 5 6 7 8 Mag. 0.990 0.967 0.925 0.874 0.831 0.783 0.743 0.706 0.10 0.19 0.27 0.35 0.43 0.50 0.57 0.64 28.8 26.5 24.3 21.6 19.8 18.1 16.8 15.9 9 10 11 0.682 0.670 0.639 -144.7 -159.1 -171.8 3.887 3.765 3.617 43.2 30.1 17.5 0.093 0.094 0.095 -6.4 -14.3 -24.4 0.357 0.351 0.339 -122.3 -133.0 -143.5 0.69 0.72 0.80 15.1 14.7 14.0 12 13 0.617 0.591 175.3 163.1 3.526 3.421 4.5 -8.1 0.096 0.094 -33.5 -42.5 0.329 0.328 -154.0 -163.9 0.86 0.91 13.5 13.0 14 15 16 17 18 0.571 0.565 0.560 0.533 0.484 152.9 140.1 125.8 109.8 91.2 3.349 3.333 3.349 3.356 3.337 -17.4 -29.6 -44.4 -59.9 -77.0 0.094 0.096 0.098 0.101 0.104 -50.9 -61.1 -74.1 -88.8 -105.1 0.328 0.343 0.351 0.337 0.310 -171.3 179.5 170.5 161.8 151.6 0.95 0.96 0.98 1.01 1.11 12.7 12.7 12.7 12.5 12.1 NOISE PARAMETERS Freq. (GHz) 4 8 12 14 18 (Ta=25˚C,VDS=2V,ID=10mA) opt Magn. 0.76 0.59 0.48 0.41 0.34 Angle(deg.) 49 95 139 166 -142 Rn (Ω) 12.5 4.7 2.3 1.8 1.5 NFmin.(dB) MGF4916G MGF4919G 0.31 0.24 0.47 0.35 0.60 0.45 069 0.50 0.88 0.61 Gs (dB) 18.3 15.9 13.5 12.3 9.9 Nov. ´97