MITSUBISHI SEMICONDUCTOR Preliminary BA01232 HBT HYBRID IC Specifications are subject to change without notice. DESCRIPTION OUTLINE DRAWING The BA01232 is GaAs RF amplifier designed for W-CDMA hand-held phone. Unit : millimeters FEATURES Low voltage Vcc=3.5V High power Po=26.5dBm @1920∼1980MHz High gain Gp=27.5dB @Po=26.5dBm 2stage amplifier Internal input and output matching Small size package 4x4x1.2mm ① ⑥ ② ⑤ ③ ④ 4.00 4.00 1.40 1.2 ① Pin ④ Pout ② Vc1 ⑤ Vcb APPLICATION W-CDMA(UTRA/FDD) mobile transmitter (UE Power Class 3). ③ Vc2 ⑥ Vref ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Parameter Vcc Supply voltage of HPA Pin Input power Tc(op) Tstg Condition Ratings* Unit 6 V 7 dBm Operating case temp. -20 ∼ +85 °C Storage temp. -30 ∼ +95 °C ZG=ZL=50Ω *Note : Each maximum rating is guaranteed independently . ELECTRICAL CHARACTERISTICS(Ta=25°C) Symbol Parameter Limits Test conditions** MIN f Frequency Icqt Idle current Ict TYP 1920 1980 Unit MHz 35 mA Total current 252 mA PAE Power added efficiency 50 % Pin Input Power Po=26.5dBm -1.0 dBm ρin Return loss Adjacent channel leakage power at 5MHz Adjacent channel leakage power at 10MHz Vc1=Vc2=3.5V ACLR 2Sp/3Sp 2nd/3rd harmonics RX noise RX band noise **NOTE No RF input MAX Vref=2.9V Vcb=2.9V -6 dB -41 -38 dBc -54 -48 dBc -30 dBc -140 dBm/Hz : ZG=ZL=50Ω 3.84Mcps spreading, HPSK. Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORP. Feb.,04