MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. 7PKVOKNNKOGVGTU KPEJGU 176.+0'&4#9+0) /+0 /+0 r r item 01 : 2.3 - 2.5 GHz band power amplifier item 51 : 2.3 - 2.5 GHz band digital radio communication r r r QUALITY GRADE IG r r RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 6.5 (A) RG=25 (ohm) )( ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C) r r APPLICATION r r /+0 /+0 r r r r FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=2.3 - 2.5 GHz High power gain GLP = 12 dB (TYP.) @ f=2.3 - 2.5GHz High power added efficiency P.A.E. = 45 % (TYP.) @ f=2.3 - 2.5GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. )#6' 5174%' (.#0)' &4#+0 < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Reverse gate current IGF Forward gate current PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=25deg.C ELECTRICAL CARACTERISTICS Symbol VGS(off) P1dB GLP ID P.A.E. IM3 *2 Rth(ch-c) *3 Parameter Saturated drain current Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance Ratings -15 -15 22 -61 76 100 175 -65 / +175 Unit V V A mA mA W deg.C deg.C making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. (Ta=25deg.C) Test conditions VDS = 3V , ID = 60mA VDS=10V, ID(RF off)=6.5A, f=2.3 - 2.5GHz delta Vf method Min. - Limits Typ. Max. -5 Unit V 44 45 - dBm 11 -42 - 12 7.5 45 -45 - 1.5 dB A % dBc deg.C/W *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=2.3,2.4,2.5GHz,dfelta f=5MHz *3 : Channel-case MITSUBISHI ELECTRIC June-'04 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June-'04