MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V6472 6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. Unit: millimeters (inches) 24+/-0.3 R1.25 0.6+/-0.15 2MIN FEATURES (1) Class A operation R1.2 Internally matched to 50(ohm) system (2) 15.8 P1dB = 12W (TYP.) @ f=6.4~7.2GHz High power gain 8.0+/-0.2 17.4+/-0.3 High output power GLP = 9 dB (TYP.) @ f=6.4~7.2GHz High power added efficiency 2MIN P.A.E. = 32 % (TYP.) @ f=6.4~7.2GHz (3) Low distortion [ item -51 ] IM3= -45 dBc(TYP.) @Po=30dBm S.C.L. 20.4+/-0.2 Thermal Resistance Rth(ch-c)=- deg.C/W(TYP.) 0.1 2.4+/-0.2 13.4 4.0+/-0.4 APPLICATION item 01 : 6.4~7.2 GHz band power amplifier 1.4 item 51 : 6.4~7.2 GHz band digital radio communication (1):GATE (2):SOURCE(FLANGE) (3):DRAIN QUALITY GRADE IG GF-18 RECOMMENDED BIAS CONDITIONS VDS = 10 V ID = 3.4 A Refer to Bias Procedure RG= 50 ohm ABSOLUTE MAXIMUM RATINGS Symbol Parameter (Ta=25 deg.C) Ratings Unit V VGDO Gate to drain voltage -15 VGSO Gate to source voltage -15 V ID Drain current 12 A IGR Reverse gate current -30 mA IGF Forward gate current 63 mA PT Total power dissipation *1 53.6 W Tch Channel temperature 175 deg.C Tstg Storage temperature -65 ~ +175 deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25 deg.C ELECTRICAL CHARACTERISTICS Symbol Parameter (Ta=25 deg.C) Test conditions Limits Min. Typ. Max. Unit IDSS Saturated drain current VDS=3V, VGS=0V - - 12 gm Transconductance VDS=3V, ID=3A - 3 - A S VGS(off) Gate to source cut-off voltage VDS=3V, ID=30mA - - -5 V 40 41 - dBm 8 9 - dB P1dB Output power at 1dB gain compression GLP Linear power gain ID Drain current - - - A P.A.E. Power added efficiency - 32 - % -42 -45 VDS=10V, ID(RF off)=3.4A, f=6.4~7.2GHz IM3 3rd order IM distortion *1 Rth(ch-c) Thermal resistance *2 Delta Vf method - 2.2 2.8 dBc deg.C/W *1 : item -51, 2 tone test, Po=30dBm Single Carrier Level, f=7.2GHz, Delta f=10MHz *2 : Channel to case MITSUBISHI ELECTRIC Oct-03 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V6472 6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC