MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V7177 7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters (inches) 24+ /-0.3 R1.25 (1) 0.6+/-0.15 2 MIN The MGFC41V7177 is an internally impedence matched GaAs power FET especially designed for use in 7.1 - 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability. FEATURES Internally matched to 50ohm system High output power P1dB = 12W (TIP.) @ f=7.1 - 7.7 Hz High power gain GLP = 9.5 dB (TYP.) @ f=7.1 - 7.7 GHz High power added efficiency Eadd = 33 % (TYP.) @ f=7.1 - 7.7 GHz Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=30dBm S.C.L. (3) 13.4 4 .0 + /-0 .4 0 .1 7.1 - 7.7GHz band amplifiers QUALITY GRADE 1 .4 IG RECOMMENDED BIAS CONDITIONS (1): GATE (2): SOURCE (FLANGE) (3): DRAIN GF-18 Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit Gate to drain voltage -15 V Gate to source voltage -15 V Drain current 12 A IGR Reverse gate current -30 mA IGF Forward gate current 63 mA PT Total power dissipation *1 53.6 W Tch Channel temperature 175 DegreesC Tstg Storage temperature -65 to +175 DegreesC VGDO VGSO ID Parameter *1 : Tc=25 DegreesC ABSOLUTE MAXIMUM RATINGS Symbol Parameter Limits Test conditions Min Unit Typ Max IDSS Saturated drain current VDS = 3V , VGS = 0V - - 12 A gm Transconductance VDS = 3V , ID = 3.0A - 3 - S VDS = 3V , ID = 30mA - - -5 V 40 41 - dBm dB VGS(off) P1dB GLP Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain 2 .4 + /-0 .2 20.4+ /-0.2 APPLICATION VDS = 10V ID = 3.4 A Rg = 50(ohm) 1 5 .8 8 .0 + /-0 .2 (2) 2 MIN 1 7 .4 +/-0 .3 R1.2 7 8 - Eadd Power added efficiency VDS = 10V , ID = 3.4A , f = 7.1 - 7.7 GHz - 30 - % IM3 *2 3rd order IM distortion -42 -45 - dBc Rth(ch-c) Thermal resistance *1 - - 2.8 C/W Delta Vf method *1 : Channel to case *2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=7.7GHz,Delta f=10MHz MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V7177 7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS VDS=10V UDS=3.4A 42 Po , P.A.E. vs. Pin 18 100 45 VDS=10V IDS=3.4A f=7.4GHz 16 Output power Po (dBm) Output power P1dB (dBm) 40 P1dB 14 41 40 12 39 10 GLP 6 37 7.0 7.1 7.2 7.3 7.4 7.5 7.6 Frequency (GHz) 7.7 35 60 30 40 P.A. E 25 8 38 80 Po 20 0 20 7.8 Power added efficiency P.A.E. (%) P1dB,GLP vs. Freq. 43 15 20 25 30 35 Input power Pin (dBm) 40 Po,IM3 vs. Pin 0 VDS=10V IDS=3.4A F1=7.70GHz f2=7.71GHz 2-tone test 34 32 -10 Po -20 -30 30 IM3 28 -40 26 -50 IM3 (dBc) Output power Po (dBm S.C.L.) 36 -60 24 15 17 19 21 23 25 27 Input power Pin (dBm S.C.L.) S parameters f (GHz) 7.10 7.20 7.30 7.40 7.50 7.60 7.70 Magn. 0.510 0.450 0.380 0.290 0.180 0.060 0.130 29 ( Ta=25deg.C , VDS=10(V),IDS=3.4(A) ) S11 Angle(deg) 66.000 57.000 48.000 40.000 34.000 59.000 146.000 Magn. 2.600 2.600 2.640 2.650 2.670 2.640 2.570 S-Parameter (TYP.) S21 S12 Angle(deg) Magn. Angle(deg) -131.000 0.066 172.000 -146.000 0.073 160.000 -161.000 0.079 146.000 -177.000 0.085 133.000 167.000 0.092 118.000 149.000 0.094 103.000 131.000 0.097 86.000 Magn. 0.220 0.220 0.220 0.210 0.180 0.130 0.070 S22 Angle(deg) 106.000 89.000 71.000 53.000 38.000 20.000 -13.000 Oct-01 MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V7177 7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC