MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M3540MD RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M3540MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the 350 to 400 MHz range. BLOCK DIAGRAM 2 3 4 1 FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V) • Pout>38dBm @ VDD=7.2V, Pin=19dBm Idq1=20mA(Vgg1adjust.),Idq2=1A(Vgg2 adjust.) @ VDD=7.2V, Pout=38dBm (Pin adjust.), • ηT>35% Idq1=20mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.) • IMD3<-25dBc @ VDD=7.2V, Pout (average) =35dBm (Pin adjust.) 5 6 1 RF Input (Pin) 2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg1） 3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg2） 4 Drain Voltage (VDD), Battery 5 RF Output (Pout) 6 RF Ground (Case) Two tone test at 1KHz separation Idq1=20mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.) • Broadband Frequency Range: 350-400MHz • Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm PACKAGE CODE: H46S RoHS COMPLIANT • RA03M3540MD-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA03M3540MD-101 Antistatic tray, 25 modules/tray RA03M3540MD MITSUBISHI ELECTRIC 1/7 31 Jan 2007 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANT RA03M3540MD MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT 9.2 V VDD Drain Voltage VGG<3.5V VGG1 Gate Voltage VDD<7.2V, Pin=0mW 4 V VGG2 Gate Voltage VDD<7.2V, Pin=0mW 4 V Pin Input Power 100 mW Pout Output Power f=350-400MHz, ZG=ZL=50Ω Tcase(OP) Tstg 10 W Operation Case Temperature Range -30 to +90 °C Storage Temperature Range -40 to +110 °C TYP MAX UNIT 400 MHz The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER f Frequency Range Pout Output Power ηT Total Efficiency nd 2fo 2 ρin Input VSWR IGG Gate Current Harmonic rd IMD3 3 Inter Modulation Distortion IMD5 5 Inter Modulation Distortion th GV — — CONDITIONS MIN 350 VDD=7.2V,Pin(Single Carrier)=+19dBm, Idq1=20mA(Vgg1 adjust.), Idq2=1A(Vgg2 adjust.) VDD=7.2V,Pout (Single Carrier) =38dBm (,Pin adjust.), Idq1=20mA(Vgg1 adjust.), Idq2=1A(Vgg2 adjust.) 38 dBm 35 % -25 dBc 4.4:1 — 1 VDD=7.2V,Pout (average)=35dBm(Pin adjust.), Idq1=20mA(Vgg1 adjust.), Idq2=1A(Vgg2 adjust.) , Two tone test at 1KHz separation Gain Variation VDD=7.2V,Pout (Single Carrier)=35dBm(Pin adjust.), Across specified frequency range Idq1=20mA(Vgg1 adjust.), Idq2=1A(Vgg2 adjust.) Stability Vdd=6.0/7.2/9.2V, Idq1=20mA(Vgg1 adjust), Idq2=1A(Vgg2 adjust) , Po(Single Carrier)=15-38dBm(Pin control) LOAD VSWR=2:1(All Phase),Zg=50Ω Load VSWR Tolerance Vdd=9.2V, Pout(Single Carrier)=39dBm (Pin adjust.), LOAD VSWR=2:1(All Phase),Zg=50Ω, Idq1=20mA(Vgg1 adjust.@Vdd=7.2V), Idq2=1A(Vgg2 adjust.@Vdd=7.2V) 0 mA -25 dBc -25 dBc 4 dB No parasitic oscillation — No degradation or destroy — All parameters, conditions, ratings, and limits are subject to change without notice. RA03M3540MD MITSUBISHI ELECTRIC 2/7 31 Jan 2007 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M3540MD RoHS COMPLIANT TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) RA03M3540MD RA03M3540MD IMD3,IMD5 vs. Po Effi vs. Po T c=+25deg.C, Vdd=7.2V f=350MHz, Idq 1st stage=20mA Idq Final Stage=1.0A T c=+25deg.C, Vdd=7.2V f=350MHz, Idq 1st stager=20mA Idq Final Stage=1.0A 0 50 Effi 45 IMD3(Delta freq=1KHz) -10 Gp IMD5(Delta freq=1KHz) IMD3,IMD5(dBc) Effi(%),Gp(dB) 40 35 30 25 20 15 -20 -30 -40 -50 10 -60 5 -70 0 10 15 20 25 30 35 40 15 20 30 RA03M3540MD RA03M3540MD Effi vs. Po IMD3,IMD5 vs. Po T c=+25deg.C, Vdd=7.2V f=375MHz, Idq 1st stager=20mA Idq Final Stage=1.0A 35 40 35 40 35 40 T c=+25deg.C, Vdd=7.2V f=375MHz, Idq 1st stage=20mA Idq Final Stage=1.0A 0 50 Effi 45 IMD3(Delta freq=1KHz) -10 Gp 40 IMD3,IMD5(dBc) IMD5(Delta freq=1KHz) 35 Effi(%),Gp(dB) 25 Po(2tone ave rage )(dBm) Po(single carrie r)(dBm) 30 25 20 15 -20 -30 -40 -50 10 -60 5 -70 0 10 15 20 25 30 35 15 40 20 30 RA03M3540MD RA03M3540MD IMD3,IMD5 vs. Po Effi vs. Po T c=+25deg.C, Vdd=7.2V f=400MHz, Idq 1st stage=20mA Idq Final Stage=1.0A T c=+25deg.C, Vdd=7.2V f=400MHz, Idq 1st stager=20mA Idq Final Stage=1.0A 0 50 Effi 45 IMD3(Delta freq=1KHz) -10 Gp IMD3,IMD5(dBc) 40 35 Effi(%),Gp(dB) 25 Po(2tone ave rage )(dBm) Po(single carrie r)(dBm) 30 25 20 15 IMD5(Delta freq=1KHz) -20 -30 -40 -50 10 -60 5 -70 0 10 15 20 25 30 35 40 15 RA03M3540MD 20 25 30 Po(2tone ave rage )(dBm) Po(single carrie r)(dBm) MITSUBISHI ELECTRIC 3/7 31 Jan 2007 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M3540MD RoHS COMPLIANT OUTLINE DRAWING (mm) 30±0.2 26.6±0.2 21.2±0.2 ⑤ 6±0.2 ⑥ 7.4±0.2 ④ 6±1 ① ② ③ 2-R1.5±0.1 10±0.2 (4.4) 6±0.2 (1.7) φ0.45±0.15 1.5±0.2 (5.4) 2.3±0.4 3.5±0.2 6.1±1 9.9±1 13.7±1 18.8±1 23.9±1 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) RA03M3540MD MITSUBISHI ELECTRIC 4/7 31 Jan 2007 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANT RA03M3540MD TEST BLOCK DIAGRAM (TWO TONE) TEST BLOCK DIAGRAM (SINGLE CARRIER) 1 RF Input (Pin) 2 Gate Voltage (VGG1) 3 Gate Voltage (VGG2) 4 Drain Voltage (VDD) 5 RF Output (Pout) 6 RF Ground (Case) RA03M3540MD MITSUBISHI ELECTRIC 5/7 31 Jan 2007 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANT RA03M3540MD EQUIVALENT CIRCUIT 2 3 4 1 5 6 1 RF Input (Pin) 2 Gate Voltage (VGG1) 3 Gate Voltage (VGG2) 4 Drain Voltage (VDD) 5 RF Output (Pout) 6 RF Ground (Case) RA03M3540MD MITSUBISHI ELECTRIC 6/7 31 Jan 2007 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANT RA03M3540MD Output Power Adjust.: Depending on linearity, the following two methods are recommended to adjust. the output power: a) Non-linear FM modulation: By the gate voltage (VGG). b) Linear modulation: By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module. b) Is the load impedance ZL=50Ω. c) Is the source impedance ZG=50Ω. Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA03M3540MD MITSUBISHI ELECTRIC 7/7 31 Jan 2007