MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum). At VGG=5V, the typical gate currents are 5mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 400-470MHz • Metal shield structure that makes the improvements of spurious radiation simple • Low-Power Control Current IGG=5mA (typ) @ VGG=5V • Module Size: 67 x 18 x 9.9 mm • Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. BLOCK DIAGRAM 2 3 1 4 5 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) PACKAGE CODE: H2M RoHS COMPLIANCE • RA60H4047M1 is a RoHS compliant product. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA60H4047M1-101 Antistatic tray, 10 modules/tray RA60H4047M1 MITSUBISHI ELECTRIC 1/9 th 25 Oct 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H4047M1 MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG<5V, Pin=0W 17 V VGG Gate Voltage VDD<12.5V, Pin=50mW 6 V Pin Input Power 100 mW Pout Output Power 80 W Tcase(OP) Tstg f=400-470MHz, VGG<5V Operation Case Temperature Range Storage Temperature Range -30 to +100 °C -40 to +110 °C The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER F CONDITIONS Frequency Range MIN 400 Pout Output Power VDD=12.5V 60 ηT Total Efficiency VGG=5V 40 2fo 2 ρin Input VSWR IGG Gate Current IDD Leakage Current nd Harmonic — Stability — Load VSWR Tolerance TYP VDD=17V, VGG=0V, Pin=0W VDD=10.0-15.2V, Pin=25-70mW, 5<Pout <65W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout=60W (VGG control), Load VSWR=20:1 UNIT 470 MHz W % Pin=50mW VDD=0V, VGG=5V, Pin=0W MAX 5 -40 dBc 3:1 — 6 mA 1 mA No parasitic oscillation — No degradation or destroy — All parameters, conditions, ratings, and limits are subject to change without notice. RA60H4047M1 MITSUBISHI ELECTRIC 2/9 th 25 Oct 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H4047M1 TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) nd O U T PU T PO WER , T O T AL EFFIC IEN C Y, v e rsus FR EQ U EN C Y 2 ,3 P out 70 HARMONICS (dBc) 60 50 ηT 40 30 V DD =12.5V V GG=5V P in=50m W 20 10 -40 -50 2 nd -60 -70 3 rd -80 390 400 410 420 430 440 450 460 470 480 FRE QUE NCY f(M Hz ) 390 400 410 420 430 440 450 460 470 480 FRE QUE NCY f(M Hz ) IN PU T VSWR v e rsus FR EQ U EN C Y G AT E C U R R EN T v e rsus FR EQ U EN C Y 8 5 V DD =12.5V V GG=5V P in=50m W 4 GATE CURERENT (mA) 3 2 7 6 Ι GG 5 4 3 2 V DD =12.5V V GG=5V P in=50m W 1 ρ in 1 0 390 400 410 420 430 440 450 460 470 480 FRE QUE NCY f(M Hz ) 390 400 410 420 430 440 450 460 470 480 FRE QUE NCY f(M Hz ) O U T PU T PO WER , PO WER G AIN and D R AIN C U R R EN T v e rsus IN PU T PO WER O U T PU T PO WER , PO WER G AIN and D R AIN C U R R EN T v e rsus IN PU T PO WER 24 20 Gp 40 16 30 12 20 8 ID D 10 f=400M Hz , V DD =12.5V , V GG=5V 0 -10 -5 0 5 10 15 4 POWER GAIN Gp(dB) 50 60 OUTPUT POWER Pout (dBm) P out DRAIN CURRENT DI D (A) 60 24 P out 50 40 16 30 12 20 8 ID D -10 20 -5 O U T PU T PO WER , PO WER G AIN and D R AIN C U R R EN T v e rsus IN PU T PO WER 16 30 12 20 8 f=450M Hz , V DD =12.5V , V GG=5V -10 -5 0 5 10 15 4 0 20 POWER GAIN Gp(dB) 40 OUTPUT POWER Pout (dBm) 20 Gp 0 15 0 20 24 P out 50 20 Gp 40 16 30 12 20 8 ID D f=470M Hz , V DD =12.5V , V GG=5V 10 0 -10 INP UT P OW E R P in (dB m ) RA60H4047M1 10 60 DRAIN CURRENT DI D (A) POWER GAIN Gp(dB) OUTPUT POWER Pout (dBm) 24 P out 10 5 O U T PU T PO WER , PO WER G AIN and D R AIN C U R R EN T v e rsus IN PU T PO WER 60 ID D 0 4 INP UT P OW E R P in (dB m ) INP UT P OW E R P in (dB m ) 50 f=430M Hz , V DD =12.5V , V GG=5V 10 0 0 20 Gp DRAIN CURRENT IDD(A) INPUT VSWR ρ in (-) V DD =12.5V V GG=5V P in=50m W -5 0 5 10 15 4 DRAIN CURRENT IDD (A) TOTAL EFFICIENCY(%) OUTPUT POWER Pout (W) 80 POWER GAIN Gp(dB) H AR M O N IC S v e rsus FR EQ U EN C Y -30 90 OUTPUT POWER Pout (dBm) rd 0 20 INP UT P OW E R P in (dB m ) MITSUBISHI ELECTRIC 3/9 th 25 Oct 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H4047M1 TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) O U T PU T PO WER and D R AIN C U R R EN T v e rsus D R AIN VO LT AG E P out 100 18 90 16 70 14 60 12 ID D 10 40 8 30 6 20 4 10 2 0 0 8 10 12 14 14 60 12 50 6 20 4 10 2 0 16 0 2 4 100 18 90 16 70 14 60 12 ID D 10 40 8 30 6 20 4 10 2 0 0 2 4 6 8 10 12 14 OUTPUT POWER Pout (W) 20 DRAIN CURRENT DI D (A) OUTPUT POWER Pout (W) P out 50 14 60 12 ID D 50 8 30 6 20 4 10 2 8 30 6 IGG 4 10 2 0 0 3 4 5 OUTPUT POWER Pout (W) 40 GATE CURRENT IGG(mA) 80 DRAIN CURRENT DI D (A) OUTPUT POWER Pout (W) 90 16 10 ID D 2 0 4 10 ID D 30 0 0 5 6 OUTPUT POWER Pout (W) 2 GATE CURRENT IGG(mA) 4 DRAIN CURRENT DI D (A) OUTPUT POWER Pout (W) 6 10 4 4 2 0 1 2 3 4 5 6 18 f=470M Hz , V DD =12.5V , P in=50m W 70 16 P out 14 60 12 50 10 ID D 40 8 30 6 IGG 20 4 10 2 0 0 0 GA TE V OLTA GE V G G (V ) RA60H4047M1 6 10 80 8 IGG 3 8 IGG 20 90 14 ID D 2 14 12 40 16 10 1 16 P out 50 18 50 0 16 O U T PU T PO WER and D R AIN C U R R EN T v e rsus G AT E VO LT AG E 12 20 14 60 0 60 30 12 GA TE V OLTA GE V G G (V ) P out 40 10 18 70 6 90 70 8 0 O U T PU T PO WER and D R AIN C U R R EN T v e rsus G AT E VO LT AG E f=450M Hz , V DD =12.5V , P in=50m W 6 f=430M Hz , V DD =12.5V , P in=50m W GA TE V OLTA GE V G G (V ) 80 10 40 18 12 1 16 O U T PU T PO WER and D R AIN C U R R EN T v e rsus G AT E VO LT AG E 60 0 18 P out 70 2 14 20 16 DRA IN V OLTA GE V D D (V ) P out 50 14 20 80 16 90 70 12 0 O U T PU T PO WER and D R AIN C U R R EN T v e rsus G AT E VO LT AG E f=400M Hz , V DD =12.5V , P in=50m W 10 f=470M Hz , V GG=5V , P in=50m W DRA IN V OLTA GE V D D (V ) 80 8 O U T PU T PO WER and D R AIN C U R R EN T v e rsus D R AIN VO LT AG E 100 80 6 DRA IN V OLTA GE V D D (V ) O U T PU T PO WER and D R AIN C U R R EN T v e rsus D R AIN VO LT AG E f=450M Hz , V GG=5V , P in=50m W 8 30 DRA IN V OLTA GE V D D (V ) 90 10 ID D 40 DRAIN CURRENT DI D (A) 6 16 70 GATE CURRENT IGG(mA) 4 18 GATE CURRENT IGG(mA) 2 80 P out DRAIN CURRENT DI D (A) 50 20 f=430M Hz , V GG=5V , P in=50m W DRAIN CURRENT IDD (A) OUTPUT POWER Pout (W) 80 20 OUTPUT POWER Pout (W) f=400M Hz , V GG=5V , P in=50m W 90 DRAIN CURRENT DI D (A) 100 DRAIN CURRENT DI D (A) O U T PU T PO WER and D R AIN C U R R EN T v e rsus D R AIN VO LT AG E 1 2 3 4 5 6 GA TE V OLTA GE V G G (V ) MITSUBISHI ELECTRIC 4/9 th 25 Oct 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H4047M1 OUTLINE DRAWING (mm) 67±1 ④ 18±1 10.7±1 ③ 15±1 ① ② 4±0.5 49.8±1 2-R2±0.5 19.4±1 (3.26) 60±1 12.5±1 0.6±0.2 17±1 44±1 （2.6） （9.9） 3.1+0.6/-0.4 7.3±0.5 56±1 1 RF Input (Pin ) 2 Gate Voltage(VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) RA60H4047M1 MITSUBISHI ELECTRIC 5/9 th 25 Oct 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H4047M1 TEST BLOCK DIAGRAM Power Meter DUT 1 Signal Generator Attenuator Preamplifier Attenuator Directional Coupler 2 3 4 Z L =50 Ω Z G =50 Ω C1 Spectrum Analyzer 5 Directional Coupler Attenuator Power Meter C2 + DC Power Supply V DD + DC Power Supply V GG 1 RF Input (Pin) C1, C2: 4700pF, 22uF in parallel 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) EQUIVALENT CIRCUIT 3 1 4 5 2 RA60H4047M1 MITSUBISHI ELECTRIC 6/9 th 25 Oct 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H4047M1 PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the glass-epoxy substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ ηT=40% VDD Stage (W) (W) (V) (°C/W) (A) 1st 0.05 2.5 2.24 1.5 12.5 2nd 2.5 60.0 0.45 10.5 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 1.5A – 2.5W + 0.05W) x 2.24°C/W = Tcase + 36.5 °C Tch2 = Tcase + (12.5V x 10.5A – 60.0W + 2.5W) x 0.45°C/W = Tcase + 33.2 °C For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient temperature Tair=60°C and Pout=60W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (60W/40% - 60W + 0.05W) = 0.33 °C/W When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 66.5 °C Tch2 = Tair + 63.2 °C The 175°C maximum rating for the channel temperature ensures application under derated conditions. RA60H4047M1 MITSUBISHI ELECTRIC 7/9 th 25 Oct 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H4047M1 Output Power Control: Depending on linearity, the following three methods are recommended to control the output power: a) Non-linear FM modulation at high power operating: By the gate voltage(VGG). When the gate voltage is close to zero, the nominal output signal (Pout=60W) is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. Around VGG=0V(minimum), the output power and drain current increases substantially. Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50Ω? c) Is the source impedance ZG=50Ω? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA60H4047M1 MITSUBISHI ELECTRIC 8/9 th 25 Oct 2006 SALES CONTACT JAPAN: Mitsubishi Electric Corporation Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-ku Tokyo, Japan 100 Email: [email protected] Phone: +81-3-3218-4854 Fax: +81-3-3218-4861 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: [email protected] Phone: +49-2102-486-0 Fax: +49-2102-486-4140 HONG KONG: Mitsubishi Electric Hong Kong Ltd. Semiconductor Division 41/F. Manulife Tower, 169 Electric Road North Point, Hong Kong Email: [email protected] Phone: +852 2510-0555 Fax: +852 2510-9822 FRANCE: Mitsubishi Electric Europe B.V. Semiconductor 25 Boulevard des Bouvets F-92741 Nanterre Cedex, France Email: [email protected] Phone: +33-1-55685-668 Fax: +33-1-55685-739 SINGAPORE: Mitsubishi Electric Asia PTE Ltd Semiconductor Division 307 Alexandra Road #3-01/02 Mitsubishi Electric Building, Singapore 159943 Email: [email protected] Phone: +65 64 732 308 Fax: +65 64 738 984 ITALY: Mitsubishi Electric Europe B.V. Semiconductor Centro Direzionale Colleoni, Palazzo Perseo 2, Via Paracelso I-20041 Agrate Brianza, Milano, Italy Email: [email protected] Phone: +39-039-6053-10 Fax: +39-039-6053-212 TAIWAN: Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department 9F, No. 88, Sec. 6 Chung Shan N. Road Taipei, Taiwan, R.O.C. Email: [email protected] Phone: +886-2-2836-5288 Fax: +886-2-2833-9793 U.K.: Mitsubishi Electric Europe B.V. Semiconductor Travellers Lane, Hatfield Hertfordshire, AL10 8XB, England Email: [email protected] Phone: +44-1707-278-900 Fax: +44-1707-278-837 U.S.A.: Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group 1050 East Arques Avenue Sunnyvale, CA 94085 Email: [email protected] Phone: 408-730-5900 Fax: 408-737-1129 AUSTRALIA: Mitsubishi Electric Australia, Semiconductor Division 348 Victoria Road Rydalmere, NSW 2116 Sydney, Australia Email: [email protected] Phone: +61 2 9684-7210 +61 2 9684 7212 +61 2 9684 7214 +61 3 9262 9898 Fax: +61 2 9684-7208 +61 2 9684 7245 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918 RA60H4047M1 MITSUBISHI ELECTRIC 9/9 th 25 Oct 2006