PHILIPS BAS32L

BAS32L
High-speed switching diode
Rev. 05 — 3 January 2008
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features
n
n
n
n
n
High switching speed: trr ≤ 4 ns
Reverse voltage: VR ≤ 75 V
Repetitive peak reverse voltage: VRRM ≤ 100 V
Repetitive peak forward current: IFRM ≤ 450 mA
Small hermetically sealed glass SMD package
1.3 Applications
n High-speed switching
n Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
[1]
Typ
Max
Unit
IF
forward current
-
-
200
mA
IFRM
repetitive peak forward
current
-
-
450
mA
VR
reverse voltage
-
-
75
V
VF
forward voltage
trr
reverse recovery time
IF = 100 mA
[2]
-
-
1000
mV
-
-
4
ns
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
BAS32L
NXP Semiconductors
High-speed switching diode
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode
2
anode
Simplified outline
Symbol
[1]
k
a
2
1
006aab040
[1]
The marking band indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BAS32L
-
hermetically sealed glass surface-mounted package;
2 connectors
SOD80C
Table 4.
Marking codes
4. Marking
Type number
Marking code[1]
BAS32L
marking band
[1]
black: made in Philippines
brown: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
repetitive peak reverse
voltage
VR
reverse voltage
IF
forward current
IFRM
repetitive peak forward
current
IFSM
non-repetitive peak forward
current
Conditions
Min
Max
Unit
-
100
V
-
75
V
-
200
mA
-
450
mA
tp = 1 µs
-
4
A
tp = 1 ms
-
1
A
-
0.5
A
-
500
mW
[1]
square wave
[2]
tp = 1 s
Ptot
total power dissipation
Tamb = 25 °C
BAS32L_5
Product data sheet
[1]
© NXP B.V. 2008. All rights reserved.
Rev. 05 — 3 January 2008
2 of 10
BAS32L
NXP Semiconductors
High-speed switching diode
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Tj
Conditions
Min
Max
Unit
junction temperature
-
200
°C
Tamb
ambient temperature
−65
+200
°C
Tstg
storage temperature
−65
+200
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Tj = 25 °C prior to surge.
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
[1]
in free air
[1]
Min
Typ
Max
Unit
-
-
350
K/W
-
-
300
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 5 mA
620
-
750
mV
IF = 100 mA
-
-
1000
mV
IR
reverse current
Cd
diode capacitance
trr
reverse recovery
time
VFR
forward recovery
voltage
IF = 100 mA; Tj = 100 °C
-
-
930
mV
VR = 20 V
-
-
25
nA
VR = 75 V
-
-
5
µA
VR = 20 V; Tj = 150 °C
-
-
50
µA
VR = 75 V; Tj = 150 °C
-
-
100
µA
VR = 0 V; f = 1 MHz
-
-
2
pF
[1]
-
-
4
ns
[2]
-
-
2.5
V
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[2]
When switched from IF = 50 mA; tr = 20 ns.
BAS32L_5
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 05 — 3 January 2008
3 of 10
BAS32L
NXP Semiconductors
High-speed switching diode
mbg451
300
mbg464
600
IF
(mA)
IF
(mA)
200
400
(1)
(2)
(3)
200
100
0
0
0
100
0
200
Tamb (°C)
1
VF (V)
2
(1) Tj = 175 °C; typical values
FR4 PCB, standard footprint
(2) Tj = 25 °C; typical values
(3) Tj = 25 °C; maximum values
Fig 1. Forward current as a function of ambient
temperature; derating curve
mbg704
102
Fig 2. Forward current as a function of forward
voltage
mgd006
103
IR
(µA)
IFSM
(A)
102
10
(1)
(2)
(3)
10
1
1
10−1
10−1
1
10
102
103
104
10−2
0
100
tp (µs)
Based on square wave currents.
(1) VR = 75 V; maximum values
Tj = 25 °C prior to surge
(2) VR = 75 V; typical values
Tj (°C)
200
(3) VR = 20 V; typical values
Fig 3. Non-repetitive peak forward current as a
function of pulse duration; maximum values
Fig 4. Reverse current as a function of junction
temperature
BAS32L_5
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 05 — 3 January 2008
4 of 10
BAS32L
NXP Semiconductors
High-speed switching diode
mgd004
1.2
Cd
(pF)
1.0
0.8
0.6
0.4
0
10
20
VR (V)
f = 1 MHz; Tj = 25 °C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
8. Test information
tr
tp
t
D.U.T.
10 %
+ IF
IF
RS = 50 Ω
SAMPLING
OSCILLOSCOPE
V = VR + IF × RS
trr
t
Ri = 50 Ω
(1)
90 %
VR
mga881
input signal
output signal
Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ ≤ 0.05
Oscilloscope: Rise time tr = 0.35 ns
(1) IR = 1 mA
Fig 6. Reverse recovery time test circuit and waveforms
I
1 kΩ
RS = 50 Ω
D.U.T.
450 Ω
I
V
90 %
OSCILLOSCOPE
VFR
Ri = 50 Ω
10 %
t
tr
t
tp
input signal
output signal
mga882
Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005
Fig 7. Forward recovery voltage test circuit and waveforms
BAS32L_5
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 05 — 3 January 2008
5 of 10
BAS32L
NXP Semiconductors
High-speed switching diode
9. Package outline
3.7
3.3
0.3
1.60
1.45
0.3
Dimensions in mm
06-03-16
Fig 8. Package outline SOD80C
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
BAS32L
[1]
Package
SOD80C
Description
4 mm pitch, 8 mm tape and reel
2500
10000
-115
-135
For further information and the availability of packing methods, see Section 14.
BAS32L_5
Product data sheet
Packing quantity
© NXP B.V. 2008. All rights reserved.
Rev. 05 — 3 January 2008
6 of 10
BAS32L
NXP Semiconductors
High-speed switching diode
11. Soldering
4.55
4.30
2.30
solder lands
solder paste
2.25 1.70 1.60
solder resist
occupied area
Dimensions in mm
0.90
(2x)
sod080c
Fig 9. Reflow soldering footprint SOD80C
6.30
4.90
2.70
1.90
solder lands
solder resist
occupied area
2.90 1.70
tracks
Dimensions in mm
sod080c
Fig 10. Wave soldering footprint SOD80C
BAS32L_5
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 05 — 3 January 2008
7 of 10
BAS32L
NXP Semiconductors
High-speed switching diode
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAS32L_5
20080103
Product data sheet
-
BAS32L_4
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Section 1.3 “Applications”: amended
Figure 4: axis unit for IR reverse current amended from mA to µA
Figure 9 and 10: amended
Section 13 “Legal information”: updated
BAS32L_4
20050322
Product data sheet
-
BAS32L_3
BAS32L_3
20020123
Product specification
-
BAS32L_2
BAS32L_2
19960910
Product specification
-
BAS32L_1
BAS32L_1
19960423
Product specification
-
-
BAS32L_5
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 05 — 3 January 2008
8 of 10
BAS32L
NXP Semiconductors
High-speed switching diode
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BAS32L_5
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 05 — 3 January 2008
9 of 10
BAS32L
NXP Semiconductors
High-speed switching diode
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 6
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 January 2008
Document identifier: BAS32L_5