BAS32L High-speed switching diode Rev. 05 — 3 January 2008 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package. 1.2 Features n n n n n High switching speed: trr ≤ 4 ns Reverse voltage: VR ≤ 75 V Repetitive peak reverse voltage: VRRM ≤ 100 V Repetitive peak forward current: IFRM ≤ 450 mA Small hermetically sealed glass SMD package 1.3 Applications n High-speed switching n Reverse polarity protection 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min [1] Typ Max Unit IF forward current - - 200 mA IFRM repetitive peak forward current - - 450 mA VR reverse voltage - - 75 V VF forward voltage trr reverse recovery time IF = 100 mA [2] - - 1000 mV - - 4 ns [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. BAS32L NXP Semiconductors High-speed switching diode 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Symbol [1] k a 2 1 006aab040 [1] The marking band indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS32L - hermetically sealed glass surface-mounted package; 2 connectors SOD80C Table 4. Marking codes 4. Marking Type number Marking code[1] BAS32L marking band [1] black: made in Philippines brown: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM repetitive peak reverse voltage VR reverse voltage IF forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current Conditions Min Max Unit - 100 V - 75 V - 200 mA - 450 mA tp = 1 µs - 4 A tp = 1 ms - 1 A - 0.5 A - 500 mW [1] square wave [2] tp = 1 s Ptot total power dissipation Tamb = 25 °C BAS32L_5 Product data sheet [1] © NXP B.V. 2008. All rights reserved. Rev. 05 — 3 January 2008 2 of 10 BAS32L NXP Semiconductors High-speed switching diode Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 200 °C Tamb ambient temperature −65 +200 °C Tstg storage temperature −65 +200 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Tj = 25 °C prior to surge. 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point [1] in free air [1] Min Typ Max Unit - - 350 K/W - - 300 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 5 mA 620 - 750 mV IF = 100 mA - - 1000 mV IR reverse current Cd diode capacitance trr reverse recovery time VFR forward recovery voltage IF = 100 mA; Tj = 100 °C - - 930 mV VR = 20 V - - 25 nA VR = 75 V - - 5 µA VR = 20 V; Tj = 150 °C - - 50 µA VR = 75 V; Tj = 150 °C - - 100 µA VR = 0 V; f = 1 MHz - - 2 pF [1] - - 4 ns [2] - - 2.5 V [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [2] When switched from IF = 50 mA; tr = 20 ns. BAS32L_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 3 January 2008 3 of 10 BAS32L NXP Semiconductors High-speed switching diode mbg451 300 mbg464 600 IF (mA) IF (mA) 200 400 (1) (2) (3) 200 100 0 0 0 100 0 200 Tamb (°C) 1 VF (V) 2 (1) Tj = 175 °C; typical values FR4 PCB, standard footprint (2) Tj = 25 °C; typical values (3) Tj = 25 °C; maximum values Fig 1. Forward current as a function of ambient temperature; derating curve mbg704 102 Fig 2. Forward current as a function of forward voltage mgd006 103 IR (µA) IFSM (A) 102 10 (1) (2) (3) 10 1 1 10−1 10−1 1 10 102 103 104 10−2 0 100 tp (µs) Based on square wave currents. (1) VR = 75 V; maximum values Tj = 25 °C prior to surge (2) VR = 75 V; typical values Tj (°C) 200 (3) VR = 20 V; typical values Fig 3. Non-repetitive peak forward current as a function of pulse duration; maximum values Fig 4. Reverse current as a function of junction temperature BAS32L_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 3 January 2008 4 of 10 BAS32L NXP Semiconductors High-speed switching diode mgd004 1.2 Cd (pF) 1.0 0.8 0.6 0.4 0 10 20 VR (V) f = 1 MHz; Tj = 25 °C Fig 5. Diode capacitance as a function of reverse voltage; typical values 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE V = VR + IF × RS trr t Ri = 50 Ω (1) 90 % VR mga881 input signal output signal Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ ≤ 0.05 Oscilloscope: Rise time tr = 0.35 ns (1) IR = 1 mA Fig 6. Reverse recovery time test circuit and waveforms I 1 kΩ RS = 50 Ω D.U.T. 450 Ω I V 90 % OSCILLOSCOPE VFR Ri = 50 Ω 10 % t tr t tp input signal output signal mga882 Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005 Fig 7. Forward recovery voltage test circuit and waveforms BAS32L_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 3 January 2008 5 of 10 BAS32L NXP Semiconductors High-speed switching diode 9. Package outline 3.7 3.3 0.3 1.60 1.45 0.3 Dimensions in mm 06-03-16 Fig 8. Package outline SOD80C 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAS32L [1] Package SOD80C Description 4 mm pitch, 8 mm tape and reel 2500 10000 -115 -135 For further information and the availability of packing methods, see Section 14. BAS32L_5 Product data sheet Packing quantity © NXP B.V. 2008. All rights reserved. Rev. 05 — 3 January 2008 6 of 10 BAS32L NXP Semiconductors High-speed switching diode 11. Soldering 4.55 4.30 2.30 solder lands solder paste 2.25 1.70 1.60 solder resist occupied area Dimensions in mm 0.90 (2x) sod080c Fig 9. Reflow soldering footprint SOD80C 6.30 4.90 2.70 1.90 solder lands solder resist occupied area 2.90 1.70 tracks Dimensions in mm sod080c Fig 10. Wave soldering footprint SOD80C BAS32L_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 3 January 2008 7 of 10 BAS32L NXP Semiconductors High-speed switching diode 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS32L_5 20080103 Product data sheet - BAS32L_4 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • Legal texts have been adapted to the new company name where appropriate. Section 1.3 “Applications”: amended Figure 4: axis unit for IR reverse current amended from mA to µA Figure 9 and 10: amended Section 13 “Legal information”: updated BAS32L_4 20050322 Product data sheet - BAS32L_3 BAS32L_3 20020123 Product specification - BAS32L_2 BAS32L_2 19960910 Product specification - BAS32L_1 BAS32L_1 19960423 Product specification - - BAS32L_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 3 January 2008 8 of 10 BAS32L NXP Semiconductors High-speed switching diode 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BAS32L_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 3 January 2008 9 of 10 BAS32L NXP Semiconductors High-speed switching diode 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information. . . . . . . . . . . . . . . . . . . . . . 6 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 January 2008 Document identifier: BAS32L_5